K5L2833ATA
Abstract: QSC6030 samsung nor flash k5l2833 WS128N K8A2815ETC samsung SPANSION samsung flash controller k5l28
Contextual Info: SEC-Mobile-ROM Using SEC K8A2815ETC & Spansion WS128N Compatibility For NOR Flash Application Note Version 1.0, April 2009 Samsung Electronics Copyright ⓒ 2009 Samsung Electronics Co.,LTD. Copyright 2009 Samsung Electronics Co, Ltd. All Rights Reserved.
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Contextual Info: Rev. 1.0, Nov. 2010 K8A2815ET B E 128Mb E-die NOR FLASH 8M x16, Sync Burst, Page Mode, Multi Bank 1.7V to 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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k8a2815et128mb070000h-077fffh068000h-06ffffh+6060000h-067fffh058000h-05ffffh050000h-057fffh048000h-04ffffh040000h-047fffh038000h-03ffffh
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BA246
Abstract: BA139 BA257 ba153 BA242 BA207 ba137 BA138 diode BA142 BA249
Contextual Info: K8A2815ET B M FLASH MEMORY Document Title 128M Bit (8M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary June 28, 2002 0.1 Revised - Change the "Programmable Wait State" settings in Burst Mode
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k8a2815etk8s28158k8s2815e000000h+1164-ballba246ba139ba257ba153ba242ba207ba137ba138 diodeba142ba249
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BA260
Abstract: BA139 BA138 BA138 diode BA205 BA169 BA251 ba209 BA114 ba148
Contextual Info: K8A2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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k8a2815et128mb54mhza0-a22+1400000fh00001fh00002fh000000hba260ba139ba138ba138 diodeba205ba169ba251ba209ba114ba148
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ba153
Abstract: BA138
Contextual Info: K8A2815ET B M FLASH MEMORY Document Title 128M Bit (8M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date 0.0 Preliminary June 28, 2002 0.1 Revised - Change the "Programmable Wait State" settings in Burst Mode
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T5371
Abstract: K8A6415EBB
Contextual Info: Application Note June. ‘05 Rising & Falling Time of Output Pin with 90nm Technology Product June , 2005 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng.
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415etbk8a6415ebb128mb/64mbk8a2815etb+3k8a2815ebbk8a6415etbt5371
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SAMSUNG MCP
Abstract: MCP Samsung CM1453-04CP CMD
Contextual Info: Application Note for OTP Program June, 2005 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng. Eng. Team Team The The Leader Leader in in Memory Memory Technology
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k8a5615etak8a5615ebak8a2815etbk8a2815ebb+5k8a6415etbk8a6415ebbsamsung mcpmcp samsungcm1453-04cp cmd
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K9HCG08U5M
Abstract: K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand
Contextual Info: SAMSUNG Mobile Memory C ontents NAND Flash NOR Flash One NAND Mobile DRAM movi NAND™ SSD Multi Media Card Living in NAND Flash world Living in the stage of 20GB memory after passing through the dark-age of 1GB in 2002, the mobile & consumer electronics now start to feel the needs
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120gb128mb256mb512mb+10k9hcg08u5mk9wbg08u1mk9lag08u0m-pcb0kmafn0000mkmbgn0000ak9mdg08u5m-pcb0k4m56323pimccoe32gqmpq-mk4m56163pimovinand
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