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K8A5615EBA Datasheets (3)

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Samsung Electronics

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
K8A5615EBA-DC7C		Samsung Electronics	IC FLASH MEM PARL 1.7V TO 1.9V 256MBIT 16MX16 80NS	Original	PDF	676.59KB	60
K8A5615EBA-DE7C		Samsung Electronics	IC FLASH MEM PARL 1.7V TO 1.9V 256MBIT 16MX16 80NS	Original	PDF	676.59KB	60
K8A5615EBA-FC7C		Samsung Electronics	IC FLASH MEM PARL 1.7V TO 1.9V 256MBIT 16MX16 80NS	Original	PDF	676.59KB	60

K8A5615EBA Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BA379 Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324 Contextual Info: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz	Original	k8a5615et 54mhz 22ech 22fch +1422edh 22fdh k8a56156et 70ns---ba379 ba377 ba339 ba438 ba429 ba416 ba-302 ba512 ba308 ba324	PDF
BA339 Abstract: BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204 Contextual Info: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz	Original	k8a5615et 54mhz 22ech 22fch +1322edh 22fdh k8a56156et 70ns---ba339 ba516 ba501 ba379 ba481 ba473 ba450 ba508 ba204	PDF
Contextual Info: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz	Original	k8a5615et 54mhz 22ech 22fch +422edh 22fdh k8a56156et 70ns---	PDF
ba508 Abstract: BA516 diode BA512 BA507 ba358 BA339 BA505 BA459 BA516 BA329 Contextual Info: K8A5615ET B A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz	Original	k8a5615et 54mhz 22ech 22fch +1422edh 22fdh k8a56156et 70ns---ba508 ba516 diode ba512 ba507 ba358 ba339 ba505 ba459 ba516 ba329	PDF
T5371 Abstract: K8A6415EBB Contextual Info: Application Note June. ‘05 Rising & Falling Time of Output Pin with 90nm Technology Product June , 2005 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng.	Original	415etb k8a6415ebb 128mb/64mb k8a2815etb +3k8a2815ebb k8a6415etb t5371	PDF
SAMSUNG MCP Abstract: MCP Samsung CM1453-04CP CMD Contextual Info: Application Note for OTP Program June, 2005 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng. Eng. Team Team The The Leader Leader in in Memory Memory Technology	Original	k8a5615eta k8a5615eba k8a2815etb k8a2815ebb +5k8a6415etb k8a6415ebb samsung mcp mcp samsung cm1453-04cp cmd	PDF
BA425 Abstract: BA512 BA507 BA379 BA324 BA377 BA497 BA339 BA413 ba418 Contextual Info: K8A5615ET B A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz	Original	k8a5615et 54mhz 22ech 22fch +1422edh 22fdh k8a56156et 70ns---ba425 ba512 ba507 ba379 ba324 ba377 ba497 ba339 ba413 ba418	PDF