BA258
Abstract: ba146 BA148 ba198 BA204
Contextual Info: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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k8s2815et128mb00003fh00007fh+80000bfh000000h44-ballba258ba146ba148ba198ba204
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Contextual Info: Rev. 1.0, Nov 2010 K8S2815ET B E 128Mb E-die NOR FLASH 44FBGA, 7.7x6.2, 0.5mm ball pitch 8M x16, Muxed Burst, Multi Bank datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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k8s2815et128mb44fbga078000h-07ffffh+6070000h-077fffh068000h-06ffffh060000h-067fffh058000h-05ffffh050000h-057fffh048000h-04ffffh
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K8S2815ET
Abstract: K8S2815E ba148 BA213 samsung nor flash BA149
Contextual Info: K8S2815ET B C NOR FLASH MEMORY 128Mb C-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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k8s2815et128mb00h-027fffh018000h-01ffffh+11010000h-017fffh008000h-00ffffh007000h-007fffh006000h-006fffh005000h-005fffh004000h-004fffhk8s2815eba148ba213samsung nor flashba149
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MX29GL256
Abstract: 28F512P30 Numonyx M29W256G 28F00AP30 w25q128 MX25L6445 28F00AM29EW M29DW127G 28F128P30 PF38F3040M0Y3D
Contextual Info: Spansion NOR Flash Memory Competitive Cross Reference Guide December 2009 Parallel 1.8V Density Voltage Bus Mb (V) VIO (V) Type Bus Sector Width Type # Initial Access Burst Speed Banks Times (ns) (MHz) Packages Temp Range Recommended Pin Software Spansion OPN Compatible Compatible Notes
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at49sv163d48-pin48-balls29as016j+12en29sl800s29as00gestmx29gl25628f512p30 numonyxm29w256g28f00ap30w25q128mx25l644528f00am29ewm29dw127g28f128p30pf38f3040m0y3d
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K8S2815ET
Abstract: samsung nor flash 128M-BIT 0x55H K8S6415ET K8F1215E 0x555 128-MBIT
Contextual Info: Synchronous burst mode register setting for NOR Application Note Version 1.0, May-2009 Samsung Electronics Copyright ⓒ 2006 Samsung Electronics Co.,LTD. Copyright 2004 Samsung Electronics Co, Ltd. All Rights Reserved. Though every care has been taken to ensure the accuracy of this document, Samsung
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may-2009uint160x555512mbit+7k8s2815etsamsung nor flash128m-bit0x55hk8s6415etk8f1215e128-mbit
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BA246
Abstract: BA139 BA257 ba153 BA242 BA207 ba137 BA138 diode BA142 BA249
Contextual Info: K8A2815ET B M FLASH MEMORY Document Title 128M Bit (8M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary June 28, 2002 0.1 Revised - Change the "Programmable Wait State" settings in Burst Mode
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k8a2815etk8s28158k8s2815e000000h+1164-ballba246ba139ba257ba153ba242ba207ba137ba138 diodeba142ba249
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K9HCG08U5M
Abstract: K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand
Contextual Info: SAMSUNG Mobile Memory C ontents NAND Flash NOR Flash One NAND Mobile DRAM movi NAND™ SSD Multi Media Card Living in NAND Flash world Living in the stage of 20GB memory after passing through the dark-age of 1GB in 2002, the mobile & consumer electronics now start to feel the needs
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120gb128mb256mb512mb+10k9hcg08u5mk9wbg08u1mk9lag08u0m-pcb0kmafn0000mkmbgn0000ak9mdg08u5m-pcb0k4m56323pimccoe32gqmpq-mk4m56163pimovinand
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ba153
Abstract: BA138
Contextual Info: K8A2815ET B M FLASH MEMORY Document Title 128M Bit (8M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date 0.0 Preliminary June 28, 2002 0.1 Revised - Change the "Programmable Wait State" settings in Burst Mode
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k8a2815etk8s28158k8s2815e000000h+364-ballba153ba138
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