K73 PACKAGE Search Results

D164K

Abstract: L69 MARKING CODE 5962-9206203MYX CY7C245-35DMB smd CY 203 CY7C424-40DMB 14LX smd cross reference SMD MARKING CODE UV 5962-85525
Contextual Info: SMD Cross Reference Listed below are the SMDs for which Cypress is an approved source of supply. Please contact your local Cypress representative for the latest SMD update. DESC SMD Standardized Military Drawing Approvals[1] Package[3] SMD Number 84036 84036

22V10C

Abstract: PAL22V10C-7DC
Contextual Info: — . _ PAL22V10C _ PAL22VP10C SEMICONDUCTOR Features • Ultra high speed supports today’s and tomorrow’s fastest microprocessors — tpD = 6 ns — tsu = 3 ns — fMAX = 117 MHz • Reduced ground bounce and under­ shoot • PLCC and LCC packages with addi­

marking code s5 SOT23-6

Abstract: BAS70WT marking S5 sot363 KL8 SOT-23
Contextual Info: TM Micro Commercial Components SMALL SIGNAL SCHOTTKY DIODES MCC Part Number Peak Reverse Voltage Maximum Reverse Current PRV VR IR V V mA Maximum Forward Voltage Drop VF @ IF mV VF @ IF mA Surge Current Capacitance IFSM CTOT Marking Code Package Pin Identity

K73 Package

Abstract: 3 phase inverter schematic diagram 7C166 CY7C164A CY7C166A CI64A CY7C164A-45DMB
Contextual Info: 4bE D CYPRESS SEM IC ON DU CT OR □ - p q & eSÛ'IbbE OQObMfiS 2 R3CYP .r S - l O C Y 7 C I6 4 A C Y 7 C 1 6 6 A ";ui'./^CTPRESS , _ SEMICONDUCTOR 16,384 x 4 Static R/W RAM Features Functional Description • Automatic power-down when

Contextual Info: CY7C164A CY7C166A CYPRESS SEMICONDUCTOR Features 16,384 x 4 Static R/W RAM through I/O3 is written into the memory location specified on the address pins Ao The CY7C164A and CY7C166A are high- through A 13). performance CMOS static RAMs orga­ nized as 16,384 by 4 bits. Easy memory ex­ Reading the device is accomplished by tak­

D168K

Abstract: smd cross reference 14LX PALC22V10B-15DMB CY7C271-35WMB PALC22V10B20WMB PALC22V10B-15LMB CY7C245-35WMB CY7C346-35RMB PALC22V10-25WMB
Contextual Info: SMD Cross Reference Listed below are the SMDs for which Cypress is an approved source of supply. Please contact your local Cypress representative or see the Cypress website www.cypress.com for the latest SMD update. All part numbers that have a date in the PPL (Preferred

Contextual Info: CY7C171A CY7C172A CYPRESS SEMICONDUCTOR 4096 x 4 Static R/W RAM Separate I/O Features Functional Description • Autom atic power-down when deselected • CMOS for optim um speed/power • High speed T he CY7C171A and CY7C172A are highperformance CMOS static RAMs orga­

Contextual Info: CY7C164A CY7C166A 16,384 x 4 Static R/W RAM CYPRESS SEMICONDUCTOR Features • Automatic power-down when deselected • Output Enable OE feature (7C166A) • CMOS for optimum speed/power • High speed - 15 ns t*A • Low active power - 550 mW • Low standby power

L1112

Abstract: 3 phase inverter schematic diagram CY7C164A CY7C166A circuit 4810
Contextual Info: CYPRESS 4DE SEMICONDUCTOR D m 2SÖ%b2 □ 0 0 4 ö ci l 3 I CYP T ^ ' ï i - i o CY7C164A CY7C166A CYPRESS SEMICONDUCTOR 16,384 x 4 Static R/W RAM I/Oj is written into the memory location specified on the address pins Ao through F u nctional D escription

5962-9311201MXX

Abstract: U208 CY7C245-35WMB PALC22V10D-30DMB smd cross reference PALC22V10B15KM CY7B991-7LMB CY37256P160-83UMB PALC22V10-30DMB CQFP 208
Contextual Info: SMD Cross Reference Listed below are the SMDs for which Cypress is an approved source of supply. Please contact your local Cypress representative or see the Cypress website www.cypress.com for the latest SMD update. All part numbers that have a date in the PPL (Preferred

D168K

Abstract: PALC22V10B-20DMB CY7C186A-20DMB CY7C109L CY7C408A-15DMB CY7C342B-25RMB palc22v10b20dmb PALCE22V10-30DMB PALC22V10-30DMB CY6116A35LMBSMD
Contextual Info: SMD Cross Reference Listed below are the SMDs for which Cypress is an approved source of supply. Please contact your local Cypress representative or see the Cypress website www.cypress.com for the latest SMD update. All part numbers that have a date in the PPL (Preferred

C104A

Abstract: C104A-0
Contextual Info: CY7C164A CY7C166A CYPRESS SEMICONDUCTOR Features 16,384 x 4 Static R/W RAM Functional D escription I/0 3 is written into the memory location specified on the address pins Ao through Au). Reading the device is accomplished by taking chip enable (CE) LOW (and OE LOW for

PALC22V10B-20DMB

Abstract: PALC22V10B-15DMB CY37064P44-154YMB PALC22V10-25DMB CY37256P160-125UMB PALC22V10B-20KMB CY37512P208-100UMB PALC22V10-25WMB PALC22V10B-20WMB PALC22V10-30DMB
Contextual Info: SMD Cross Reference Listed below are the SMDs for which Cypress is an approved source of supply. Please contact your local Cypress representative or see the Cypress website www.cypress.com for the latest SMD update. All part numbers that have a date in the PPL (Preferred

CY7C171A

Abstract: CY7C172A K73 Package
Contextual Info: 4bE D 256=1^2 GGGbSBT T ESCYP ' CYPRESS SEMICONDUCTOR T 7 c f f a l 5 - G CY7C171A CY7C172A 8 4096 x 4 Static R/W RAM Separate I/O Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • Highspeed — tAl\ = 15 ns

Contextual Info: CY7C171A CY7C172A CYPRESS SEMICONDUCTOR Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed —- tAA = IS ns • Itansparent write 7C171A • Low active power — 375 mW • Low standby power

Contextual Info: CY7C171A CY7C172A CYPRESS SEMICONDUCTOR 4096 x 4 Static R/W RAM Separate I/O Features Functional Description • Automatic power-down when deselected T h e CY7C171A and CY7C172A are highperform ance C M O S static R A M s orga­ nized as 4096 by 4 bits with separate I/O .

CY7C187A

Contextual Info: CYPRESS SEMI CONDUCTOR 4bE OOObbSS D ICYP a T -q ^ iS -O ^ CY7C187A rM 'Lr CYPRESS _ SEMICONDUCTOR Features 65,536 x 1 Static R/W RAM functional Description Automatic power-down when deselected CMOS for optimum speed/power Highspeed — 12 ns Low active power

CTO 2267

Abstract: A10C CY7C170A A11C
Contextual Info: CYPRESS SEMICONDUCTOR MbE D T ^ 'iy o fe . £5 ’¡ r ES&^hhE QGObSEê S B C Y P • CYPRESS SEMICONDUCTOR CY7C170A 4096 x 4 Static R/W RAM Features Functional Description • CMOS for optimum speed/power • Highspeed — t*A = 15 ns — tACS = 10 ns • Low active power

Contextual Info: CY7C164A _ CY7C166A SEMICONDUCTOR 16,384 x 4 Static R/W RAM Features Functional Description • Automatic power-down when deselected The CY7C164A and CY7C166A are highperformance CMOS static RAMs orga­ nized as 16,384 by 4 bits. Easy memory ex­

MIL-STD-1835

Abstract: transistor k70 K70 Package 11F11 80059 80061 diode k70 CERPACK K73 11F-11 K804
Contextual Info: Package Diagram Cerpacks 24-Lead Square Cerpack K63 51-80056 16-Lead Rectangular Cerpack K69 MIL-STD-1835 F- 5 Config. A 51-80057 1 Package Diagram 18-Lead Rectangular Cerpack K70 MIL-STD-1835 F- 10 Config. A 51-80058 20-Lead Rectangular Cerpack K71 MIL-STD-1835 F- 9 Config. A

transistor k70

Abstract: MIL-STD-1835 K73 Package K70 Package K63 Package diode k70 K69 Package K74 PACKAGE DIAGRAM CERPACK equivalent
Contextual Info: Package Diagram Cerpacks 24-Lead Square Cerpack K63 16-Lead Rectangular Cerpack K69 MIL-STD-1835 F- 5 Config. A 1 Package Diagram 18-Lead Rectangular Cerpack K70 MIL-STD-1835 F- 10 Config. A 20-Lead Rectangular Cerpack K71 MIL-STD-1835 F- 9 Config. A 2 Package Diagram

Contextual Info: PRELIMINARY CYPRESS SEMICONDUCTOR • Ultra high speed supports today’s and tomorrow’s fastest microprocessors — tpD = 7.5 ns — tsi = 3 ns — fMAX = 105MHz • Reduced ground bounce and under­ shoot • PLCC and LCC packages with addi­ tional V cc and Vss pins for lowest

CY7C197

Abstract: CV7C197
Contextual Info: MbE D n " T CYPRESS SEMICONDUCTOR Features Automatic power-down when deselected CMOS for optimum speed/power Highspeed — 20ns Low active power — 880 mW Low standlgr power — 220 mW TlX-compatible imputs and outputs Capable ofwithstanding greater than

CY7C128A

Abstract: 7C128 CY7C128A-45DMB CY7C128A-55DMB
Contextual Info: CYPRESS MbE D SEMICONDUCTOR • SSÖ'ibbS QÜ0b332 T -p L { W -l» WM CYPRESS SEMICONDUCTOR A utom atic pow er-dow n w hen deselected • ViH O f2.2V C M O S fo r o p tim u m speed/pow er Functional Description The CY7C128A is a high-performance CMOS static RAM organized as 2048