7C171A Search Results

Contextual Info: 7C171A CY7C172A r^ y p p p cc Features F unctional D escription • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — tAA = 15 ns • Transparent write 7C171A • Low active power — 375 mW • Low standby power

MSM 6290

Abstract: msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+

cy3341

Abstract: 64K X 4 CACHE SRAM CY7C190 pasic380 cy7c189 palce22v10 programming guide palce16v8 programming algorithm STATIC RAM 6264 vhdl code for 8-bit parity checker 64x18 synchronous sram
Contextual Info: Product Selector Guide Static RAMs Organization/Density Density X1 X4 X4 SIO 7C147 2147 7C123 7C148 7C149 7C150 7C189 7C190 2148 2149 7C122 9122 93422 7C167A 7C168A 7C169A 7C170A 7C171A 7C172A 7C128A 7C187 7C164 7C166 7C161 7C162 7C185 6264 7C182 7C197 7C194

27HC642

Abstract: 39C10B PAL22V10APC CY2254SC-1 7132SA70 93L422AM 7024S15 7130SA25 7C198-45C 7006S
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+

P13AB

Abstract: 7C171A
Contextual Info: Features • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — tAA = 15 ns • Transparent write 7C171A • Low active power — 375 mW • Low standby power — 93 mW • TTL-eompatible inputs and outputs • Capable of withstanding greater than

CY7C171A

Abstract: CY7C172A
Contextual Info: 7C171A CY7C172A 4K x 4 Static RAM with Separate I/O Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — tAA = 15 ns • Transparent write 7C171A • Low active power — 375 mW • Low standby power

Contextual Info: 7C171A CY7C172A CYPRESS SEMICONDUCTOR Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed —- tAA = IS ns • Itansparent write 7C171A • Low active power — 375 mW • Low standby power

7c17

Abstract: CY7C171A CY7C172A C171A
Contextual Info: 1CY 7C17 2A 7C171A CY7C172A 4K x 4 Static RAM with Separate I/O Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — tAA = 15 ns • Transparent write 7C171A • Low active power — 375 mW

CY7C171A

Abstract: CY7C172A
Contextual Info: CYPRESS SEMICONDUCTOR bSE J> SSÖ'ibbB GOD'iöflL» TQM CYP 7C171A CY7C172A 4K x 4 Static R/W RAM Separate I/O Features Functional Description • Automatic power-down when deselected The 7C171A and CY7C172A are highperformance CMOS static RAMs orga­

CY7C171A

Abstract: CY7C172A CY7C171A-25PC
Contextual Info: 7C171A CY7C172A CYPRESS 4K x 4 Static RAM with Separate I/O Features w ritten into the m em ory location specified on the address pins Ao through A n . Functional Description • Automatic power* down when deselected • CMOS for optimum speed/power • High speed

81c78

Abstract: 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference
Contextual Info: Product Line Cross Reference CYPRESS 2147-35C 2147-45C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35C 2148-35M 2148-45C 2148-45C 2148-45M 2148-45M+ 2148-55C 2148-55C 2148-55M 2149-35C 2149-35C 2149-35M 2149-45C 2149-45M 2149-45M 2149-55C 2149-55C 2149-55M

SOJ 24

Contextual Info: 7C171A CY7C172A r^y p p rc c SEMICONDUCTOR Features 4Kx 4 Static RAV RAM Separate I/O Reading the device is accomplished by taking chip enable CE LOW, while write enable The 7C171A and CY7C172A are high- (WE) remains HIGH. Under these condi­ performance CMOS static RAMs orga­ tions the contents of the memory location

Contextual Info: 7C171A CY7C172A CYPRESS SEMICONDUCTOR 4096 x 4 Static R/W RAM Separate I/O Features Functional Description • Autom atic power-down when deselected • CMOS for optim um speed/power • High speed T he 7C171A and CY7C172A are highperformance CMOS static RAMs orga­

Contextual Info: 7C171A CY7C172A f^YPPF^q SEMICONDUCTOR Features Functional Description • Automatic power-down when deselected T h e C Y 7 C 1 7 1 A a n d C Y 7 C 1 7 2 A a r e hig h p e rfo rm a n c e C M O S s ta tic R A M s o r g a ­ n iz e d a s 4096 by 4 b its w ith s e p a r a te I/O .

Contextual Info: 7C171A CY7C172A CYPRESS SEMICONDUCTOR 4096 x 4 Static R/W RAM Separate I/O Features Functional Description • Automatic power-down when deselected T h e 7C171A and CY7C172A are highperform ance C M O S static R A M s orga­ nized as 4096 by 4 bits with separate I/O .

CY7C171A

Abstract: CY7C172A
Contextual Info: 7C171A CY7C172A Features D D D The 7C171A and CY7C172A are highĆ performance CMOS static RAMs orgaĆ nized as 4096 by 4 bits with separate I/O. Easy memory expansion is provided by an active LOW chip enable CE and threeĆ state drivers. They have an automatic powĆ

Contextual Info: 7C171A CY7C172A 0CYPRESS Features 4K x 4 Static RAM with Separate I/O w ritten into the m em ory location specified on the address pins Ao through A n . Functional Description • Automatic power-down when deselected T he 7C171A and CY7C172A are highperform ance CM OS static RAM s orga­

CY7C171A

Abstract: CY7C172A K73 Package
Contextual Info: 4bE D 256=1^2 GGGbSBT T ESCYP ' CYPRESS SEMICONDUCTOR T 7 c f f a l 5 - G 7C171A CY7C172A 8 4096 x 4 Static R/W RAM Separate I/O Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • Highspeed — tAl\ = 15 ns

Contextual Info: 7C171A CY7C172A CYPRESS F e a tu re s 4K x 4 Static RAM with Separate I/O written into the m emory location specified on the address pins A<> through A n . F u n c tio n a l D escrip tio n • Automatic power-down when deselected • CMOS for optimum speed/power