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    onsemi MJE3055TG

    Bipolar Power Transistor NPN 10 A 60 V 75 Watt
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    Master Electronics MJE3055TG 700
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    Avnet Americas () MJE3055TG Tube 9,400 8 Weeks 50
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    MJE3055TG Bulk 1
    • 1 $1.89
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    MJE3055TG Tube 2,500
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    Mouser Electronics MJE3055TG 45,621
    • 1 $1.83
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    Newark () MJE3055TG Bulk 1,344 1
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    MJE3055TG Bulk 569 1
    • 1 $1.89
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    • 100 $0.87
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    Rochester Electronics MJE3055TG 363 1
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    TME MJE3055TG 135 1
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    Chip 1 Exchange MJE3055TG 50
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    Avnet Asia MJE3055TG 8 Weeks 1,900
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    Avnet Silica MJE3055TG 1,100 12 Weeks 50
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    EBV Elektronik MJE3055TG 13 Weeks 50
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    Flip Electronics MJE3055TG 120
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    STMicroelectronics MJE3055T

    - Rail/Tube (Alt: MJE3055T)
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    Avnet Americas MJE3055T Tube 32 Weeks, 5 Days 1,000
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    Mouser Electronics MJE3055T 4,164
    • 1 $1.89
    • 10 $1.24
    • 100 $0.90
    • 1000 $0.63
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    Newark MJE3055T Bulk 3,819 1
    • 1 $2.00
    • 10 $1.35
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    • 1000 $0.74
    • 10000 $0.59
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    STMicroelectronics MJE3055T 4,164 1
    • 1 $1.89
    • 10 $1.24
    • 100 $0.90
    • 1000 $0.71
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    TME MJE3055T 263 1
    • 1 $1.74
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    • 100 $0.59
    • 1000 $0.59
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    Ameya Holding Limited MJE3055T 1,080
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    Avnet Silica MJE3055T 8,700 21 Weeks 50
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    Component Electronics, Inc MJE3055T 99
    • 1 $1.92
    • 10 $1.92
    • 100 $1.44
    • 1000 $1.25
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    EBV Elektronik MJE3055T 14,500 21 Weeks 50
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    SPC Multicomp MJE3055T

    Trans, Bjt, Single, Gp, Npn, 60V, 2Mhz; |Multicomp Pro MJE3055T
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    Newark MJE3055T Bulk 607 1
    • 1 $0.87
    • 10 $0.69
    • 100 $0.47
    • 1000 $0.35
    • 10000 $0.28
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    onsemi MJE3055TG (5449371)

    ON SEMI NPN BIPOLAR TRANSISTOR 10 A 60 V 3-PIN TO-220AB
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    RS MJE3055TG (5449371) Bulk 3 Weeks 1
    • 1 $1.31
    • 10 $1.15
    • 100 $1.15
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    Motorola Semiconductor Products MJE3055T

    Trans GP BJT NPN 60V 10A 75000mW 3-Pin(3+Tab) TO-220
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    Bristol Electronics MJE3055T 1,963
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    JE3055 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    JE2955T

    Abstract: JE2955 JE3055 JE3055T
    Contextual Info: MOTOROLA Order this document by MJE2955T/D SEMICONDUCTOR TECHNICAL DATA PNP M JE2955T* Com plem entary Silicon Plastic Power Transistors NPN M JE3055T* . . . designed for use in general-purpose amplifier and switching applications. • • ‘ Motorola Preferred Device


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    mje2955t/dje2955tje3055tmje3055t+421a-06o-220abje2955je3055 PDF

    JE3055

    Abstract: JE2955 current pm ic 3846 3055 npn mt 3055
    Contextual Info: MOTOROLA SC X STR S /R F IS E D | b3b725>l ODBSSSI 1 | DPAK For Surface Mount Applications PIMP M JD2955 NPN M JD3055 T -3 ¡ Íf MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complem entary Pow er Transistors Designed for general purpose am plifier and low speed switching applications.


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    b3b725je2955je3055jd2955+4jd3055current pm ic 38463055 npnmt 3055 PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    2955T

    Abstract: JE3055T 3055t JE3055 je 3055t JE2955T AN415A
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP M JE 2955T* Complementary Silicon Plastic Power Transistors UPI! M JE 3055T* . . . designed for use in general-purpose amplifier and switching applications. • • *MotoroU Preferred Dtvlct DC Current Gain Specified to 10 Amperes


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    2955t3055tmje3055tmje2955t+5je3055tje3055je 3055tje2955tan415a PDF

    powec rm 1110

    Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
    Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor


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    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


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    27tfc1n5438tfc 56302n5161+7germanium2n41931n1319a2023 transistor2n2171n5159transistor bf 175 PDF

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


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    2n7588p3139bc233asprague 40d+6gex36/7c4274s1766c12712tc236gp149 PDF

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


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    je1100mfc8040mfc8030mc1316+6triac 9707schematic of mc1466transistor mje 5332je 3055 motorolamcr407-2mc1466 PDF

    varactor 36z

    Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
    Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r


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    z1000mz4614mz46271n4099+13m4l3052m4l30561n5158varactor 36zgermaniumhalbleiter index transistorhalbleiter buch2n53472n3054working of reactance modulatorje2955germanium transistor2n3902 PDF

    JE350

    Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55
    Contextual Info: INDUSTRY STANDARD SGS-THOMSON BD135 BD136 BD137 BD138 BD139 BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 BD140 BD159 BD160 BD165 BD166 BD167 BD159 SGS-THOMSON PAGE NEAREST BD157 BD158 2N5878 BD437 BD438 BD439 BD440 BD441 BD442 BD237 BD238 BD168


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    LAT03B7B

    Abstract: LA394B5CB JE3055 LA394B2CB LAIC3B2B HP3-T0127-CB insultek 445 TBA810 semi catalog LA394B2B
    Contextual Info: WE STOP HEAT COLD MEOT SINK/DISSIPATOR PRODUCTS AND THERMAL MANAGEMENT GUIDE 5672 M cAdam Road Mississauga, O ntario L4Z 1T2 Telephone 416 890-0221 Fax (416) 890-1628 UliHWT I UfUUfW-Mi fr z r r r T ] , INTERNATIONAL ELECTRONIC RESEARCH CORPORATION The most comprehensive line


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    JE2901

    Abstract: 2N6044 JE802T JE802 JE801T JE702 LM3661TL-1.40
    Contextual Info: o Power Transistors T Y P E NO. NPN PNP @ ic ic PD B V C BO BVCEO A (W) (V) (V) MIN MIN MIN MAX MAX hFE (A) VCE(SAT) @ IC (V) (A) MAX fT (MHz) MIN 4.0 36 80 70 30 120 0.5 1.0 0.5 0.8 2N5296 4.0 36 60 40 30 120 1.0 1.0 1.0 0.8 2N5298 4.0 36 80 60 20 80 1.5


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    BD699

    Abstract: BD697 BD609 BD698 BD595 MJE34 BD601 BD699A BD695 BD597
    Contextual Info: / lC = 8 0 A BD595 BD695 B D 695A BD597 BD697 BD 697A 2N 6043 BD599 BD699 BD 699A 2N 6045 BD601 BD701 2N 6045 11 -8 < < 2 .0 H fe @ 'c Am p V CE (sat @ 'C V o lts Am p fT M Hz PD Watts Case J A le = 6.0 MJE41 M JE41A MJE41B MJE41C V PNP utw ^O NPN MJE42


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    100414DC

    Abstract: 5401DM Fairchild dtl catalog fsa2719m 4727BPC FCM7010 FCM7004 937DMQB fairchild rtl FSA2501
    Contextual Info: FAIRMONT ELECTRONICS PTY. LTD. TE L.48-6421 4 8 -6 4 8 1 /2 /4 C AB LES ' FAIRTRONICS' C R A IG H A L L T E L E X 8-3227 S A . P O .BOX 41102, C R A IG H A LL 2024. I ouani v-ox 39! 262Bramley 2018 FAIRCHILD 464 Ellis Street, M ountain View, C alifornia 94042


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    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    2cy172cy182cy192cy20+122cy21500ma2n2222a 338tfk 9492n1167halbleiter index transistorad161bsy19al103ac128tfk 404tfk 931 PDF

    B0242C

    Abstract: BDZ43C b0912 BDZ43 mje150 2N5296 2N5298 MJE30S5T 2N6109 2N6121
    Contextual Info: Power Transistors and Darlingtons TO-220 Plastic Package Representative List of T0-220 Devices with their critical parameters. For information on any other Device, please contact usj. Maximum Ratings D avies Polarity Electrical Characteristics (Ta=25 C, Unless Otherwise Specified; PD@ Tc = 25°C


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    t0-220o-2202n52942n5296+102n52982n6107b0242cbdz43cb0912bdz43mje150mje30s5t2n61092n6121 PDF

    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


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    mje3055

    Abstract: mje3055 data MJE3055K 2 N MJE3055 transistor MJE3055 MJE3055 TO-126 CASE 90-05 MJE2955K "case 90-05" 1511 BA
    Contextual Info: JE3055 SILICON JE3055K 10 AMPERE POWER TRANSISTORS HIGH POWER NPN SILICON TRANSISTORS . . . designed for use m general-purpose amplifier and switching applitions. NPN SILICON 6 0 VOLTS 90 WATTS • DC Current Gain Specified to 10 Amperes • High Current Gain — Bandwidth Product —


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    JE3055

    Contextual Info: SAMSUNG ELECTRONICS MJD3055 INC 42E D B 7^4142 000=1031 1 OSÍ1GK NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER. LOW SPEED SWITCHING APPLICATIONS. D-PACK FOR SURFACE MOUNT APPLICATIONS • « • • • Lead Formed for Surface Mount Applications No Suffix


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    mjd3055je3055500ma300/ts+3mjd30s5g00td32t-33- PDF

    MJE520

    Abstract: bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u
    Contextual Info: MOTORCLA SC XSTRS/R F 12E D | t3t?5SM aüâ4m ? T | T -9 1 -0 1 Selection By Package Motorola power transistors are available in a wide variety of metal and plastic packages to match thermal, electrical and cost requirements. The following table com pares the basic


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    -204aa-204aet0-204a97a-02+16o-205adbus51buv21buv112n6249bux41mje520bd189sc 6038mje12007motorola 527 33amj4647mje13006bd 433npnto-126je105mps-u PDF

    JE2955

    Abstract: JE3055 mje3055 127 case data MJE295ST MJE2955 JE2955T JE3055T lm 3904 2955T TO-225AB
    Contextual Info: MOTOROLA SC 12E 0 | L3b7HS4 □Qâ53Mc1 1 | XSTRS/R F r-3 3 - 5 PN P MOTOROLA r - î î - a i MJE2955, MIE2955T SEMICONDUCTOR NPN TECHNICAL DATA JE3055, JE3055T 10 A M P E R E COM PLEM ENTARY SILICO N PLASTIC POWER TRAN SISTO RS . . . designed for use in general-purpose amplifier and switching


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    TRANSISTOR tip122 CHN 949

    Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
    Contextual Info: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.


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    2SC3133 cross reference

    Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
    Contextual Info: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905


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    U/25/20/TN26/15/850/yd 803 ic

    Abstract: BUX22M JE13005 JE802 TIP+317+data+sheet bu808df1 je200 2n5337 S13003 2N6057
    Contextual Info: G E N E R A L P U R P O S E T R A N S IS T O R S TY PE ‘c V CE V CEsat 8 A (V) (V) 'o (A) 'b Rthj-c (mA) rc / w ) V CE0 V CB0 'c (V) (V) (A) 22 22 4 BD433 BD434 50 2.00 1.0 0.50 2.00 200 25 40 5 M JE200 M JE210 70 0.50 1.0 0.30 0.50 50 30 30 3 M JE520


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