IXTP5 Search Results

52P10p

Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P RDS on TO-247 (IXTH) TO-263 (IXTA) G VDSS ID25 S G D(TAB) D D(TAB) G Symbol Test Conditions Maximum Ratings VDSS

IXTP52P10P

Abstract: IXTQ52P10P IXTA52P10P 52P10P IXTH52P10P
Contextual Info: PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P VDSS ID25 TO-247 IXTH TO-220 (IXTP) TO-263 (IXTA) G S G D (TAB) D RDS(on) D (TAB) G S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100

ixtp50n20p

Contextual Info: PolarHTTM Power MOSFET VDSS ID25 IXTA50N20P IXTP50N20P IXTQ50N20P = = ≤ RDS on 200V 50A Ω 60mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 175°C Maximum Ratings 200 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

Contextual Info: PolarTM Power MOSFET VDSS = 500V = 5A ID25 RDS on ≤ 1.4Ω Ω IXTU5N50P IXTY5N50P IXTA5N50P IXTP5N50P N-Channel Enhancement Mode Avalanche Rated TO-251 (IXTU) G S D (Tab) TO-252 (IXTY) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

IXTA5N50P

Abstract: IXTP5N50P IXTU5N50P
Contextual Info: IXTU5N50P IXTY5N50P IXTA5N50P IXTP5N50P PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = 500V = 5A ID25 RDS on ≤ 1.4Ω Ω TO-251 (IXTU) G S D (Tab) TO-252 (IXTY) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

IXTQ52P10P

Abstract: 52P10 IXTH52P10P IXTP52P10P 52P10P to-247 to-220 to-3p IXTA52P10P
Contextual Info: PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P S G D TAB D D (TAB) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ -100 V VGSS Continuous

50N28

Abstract: IXTA50N28T
Contextual Info: Preliminary Technical Information Trench Gate Power MOSFETs VDSS ID25 IXTA50N28T IXTP50N28T IXTQ50N28T RDS on = 280V = 50A Ω ≤ 66mΩ N-Channel Enhancement Mode For PDP Drivers TO-263 AA (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

52P10p

Abstract: 52P10
Contextual Info: PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P VDSS ID25 TO-247 IXTH TO-220 (IXTP) TO-263 (IXTA) G S G D (TAB) D RDS(on) D (TAB) G S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100

Contextual Info: PolarHTTM Power MOSFET VDSS ID25 IXTP50N20PM RDS on (Electrically Isolated Tab) = = ≤ 200V 20A Ω 60mΩ N-Chlnnel Enhancement Mode OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol Test Conditions VDSS TJ = 25°C to 175°C Maximum Ratings 200 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

IXTP55N075T

Abstract: IXTY55N075T 8V45
Contextual Info: Preliminary Technical Information IXTP55N075T IXTY55N075T TrenchMVTM Power MOSFET VDSS ID25 = = RDS on N-Channel Enhancement Mode Avalanche Rated 75 V 55 A Ω ≤ 19.5 mΩ TO-220 (IXTP) D (TAB) G Symbol Test Conditions V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

Contextual Info: Preliminary Technical Information IXTP50N085T IXTY50N085T TrenchMVTM Power MOSFET VDSS ID25 = = RDS on ≤ N-Channel Enhancement Mode Avalanche Rated 85 V 50 A Ω 23 mΩ TO-220 (IXTP) D (TAB) G Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C

50N28

Abstract: 50N28T IXTA50N28T IXTQ50N28T
Contextual Info: Preliminary Technical Information IXTA50N28T IXTP50N28T IXTQ50N28T Trench Gate Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode For PDP Drivers = 280V = 50A ≤ 66mΩ Ω TO-263 AA (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

IXTP50n25

Abstract: IXTP*50N25T IXTP50N25T 50n25 IXTQ50N25T 50N25T IXTA50N25T ixth50n25t N-channel MOSFET to-247 50a ixtq50n25
Contextual Info: Preliminary Technical Information Trench Gate Power MOSFET IXTA50N25T IXTH50N25T IXTP50N25T IXTQ50N25T VDSS ID25 = = 250V 50A Ω 50mΩ RDS on ≤ N-Channel Enhancement Mode TO-247 (IXTH) TO-263 (IXTA) G S G (TAB) D TO-220 (IXTP) G (TAB) S Symbol Test Conditions

IXTP50N20PM

Abstract: 50N20 50N20P ixtp50n20p
Contextual Info: PolarHTTM Power MOSFET IXTP50N20PM VDSS ID25 RDS on (Electrically Isolated Tab) = = ≤ 200V 20A Ω 60mΩ N-Chlnnel Enhancement Mode OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol Test Conditions VDSS TJ = 25°C to 175°C Maximum Ratings 200 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

IXTP50N20P

Abstract: 50N-2 50N20P IXTA50N20P IXTQ50N20P 50n20 G4050
Contextual Info: PolarHTTM Power MOSFET IXTA50N20P IXTP50N20P IXTQ50N20P VDSS ID25 = = ≤ RDS on 200V 50A Ω 60mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 175°C Maximum Ratings 200 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ

IXTA50N25T

Abstract: IXTH50N25T ixtp50n25t IXTQ50N25T IXTP50n25 IXTP*50N25T 50N25T 50n25 DS99346B ixtq50n25
Contextual Info: Trench Gate Power MOSFET IXTA50N25T IXTQ50N25T IXTP50N25T IXTH50N25T VDSS ID25 = = 250V 50A Ω 60mΩ RDS on ≤ N-Channel Enhancement Mode TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G G D S S G D (Tab) DS D (Tab) D (Tab) TO-247 (IXTH) Symbol Test Conditions

IXTA56N15T

Contextual Info: TrenchTM Power MOSFETs VDSS ID25 IXTA56N15T IXTP56N15T RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 150V = 56A Ω ≤ 36mΩ TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 150 V

Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET IXTP50N085T IXTY50N085T VDSS ID25 = = RDS on ≤ N-Channel Enhancement Mode Avalanche Rated 85 V 50 A Ω 23 mΩ TO-220 (IXTP) D (TAB) G Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C

Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET IXTP55N075T IXTY55N075T VDSS ID25 = = RDS on N-Channel Enhancement Mode Avalanche Rated 75 V 55 A Ω ≤ 19.5 mΩ TO-220 (IXTP) D (TAB) G Symbol Test Conditions V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

Contextual Info: IXTA50N25T IXTQ50N25T IXTP50N25T IXTH50N25T Trench Gate Power MOSFET VDSS ID25 = = 250V 50A Ω 60mΩ RDS on ≤ N-Channel Enhancement Mode TO-3P (IXTQ) TO-220AB (IXTP) TO-263 AA (IXTA) G G D S S G D (Tab) DS D (Tab) D (Tab) TO-247 (IXTH) Symbol Test Conditions

ixtp56n15t

Abstract: IXTP56n15 56N15 56N15T IXTA56N15T mosfet ixtp56n15t ixta 56A4-1 IXTP5
Contextual Info: Preliminary Technical Information TrenchHVTM Power MOSFET IXTA56N15T IXTP56N15T VDSS ID25 RDS on = 150 V = 56 A Ω ≤ 36 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

IXTD08N100P-1A

Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types

to-247 to-220 to-3p

Abstract: IXTA52P10P IXTA36P15P IXTN40P50P IXTQ52P10P sot-227 footprint IXTA10P50P ixtq IXTH10P50 IXTH10P50P
Contextual Info: IXYS POWER Efficiency through Technology N EW P RO D U C T B RIE F PolarPTM P-Channel Power MOSFETs Next Generation P-Channel Power MOSFETs -100V to -500V MAY 2008 OVERVIEW IXYS’ PolarP P-Channel Power MOSFETs are designed to bring a more cost-effective

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455