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    IXTA56N15T Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTA56N15T
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 56A TO-263 Original PDF 5
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    IXTA56N15T Price and Stock

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    IXYS Corporation IXTA56N15T

    MOSFETs 56 Amps 150V 36 Rds
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    Mouser Electronics IXTA56N15T
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    Littelfuse Inc IXTA56N15T

    Discmsft Nchtrenchgate-Gen1 To-263D2/ Tu; |Littelfuse IXTA56N15T
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    IXTA56N15T Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ixtp56n15t

    Abstract: 56N15 56N15T IXTP56n15 IXTA56N15T
    Contextual Info: IXTA56N15T IXTP56N15T TrenchTM Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 150V = 56A Ω ≤ 36mΩ TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 150 V


    Original     		ixta56n15tixtp56n15to-263o-220ab+5062in56n15t1-12-a56n15ixtp56n15 PDF

    IXTA56N15T

    Contextual Info: TrenchTM Power MOSFETs VDSS ID25 IXTA56N15T IXTP56N15T RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 150V = 56A Ω ≤ 36mΩ TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 150 V


    Original     		ixta56n15tixtp56n15to-263260ff+256n15t1-12-a PDF

    ixtp56n15t

    Abstract: IXTP56n15 56N15 56N15T IXTA56N15T mosfet ixtp56n15t ixta 56A4-1 IXTP5
    Contextual Info: Preliminary Technical Information TrenchHVTM Power MOSFET IXTA56N15T IXTP56N15T VDSS ID25 RDS on = 150 V = 56 A Ω ≤ 36 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		ixta56n15tixtp56n15to-220o-263+756n15tixtp56n1556n15mosfet ixtp56n15tixta56a4-1ixtp5 PDF