IXTP56N15 Search Results

IXTP56N15 Datasheets (1)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTP56N15T		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 56A TO-220	Original	PDF		5

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Littelfuse Inc IXTP56N15T Discmsft Nchtrenchgate-Gen1 To-220Ab/Fp/; \|Littelfuse IXTP56N15T
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXTP56N15T	Bulk			300	1 - 10 - 100 - 1000 $2.93 10000 $2.75	Buy Now
RS	IXTP56N15T	Bulk		8 Weeks	50	1 - 10 - 100 $4.19 1000 $4.19 10000 $4.19	Get Quote
Onlinecomponents.com	IXTP56N15T					1 - 10 - 100 $3.51 1000 $2.41 10000 $2.41	Buy Now
IXYS Corporation IXTP56N15T MOSFETs 56 Amps 150V 36 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	IXTP56N15T	Tube			300	1 - 10 - 100 - 1000 $3.06 10000 $3.06	Buy Now
TME	IXTP56N15T				1	1 $4.00 10 $3.19 100 $2.86 1000 $2.86 10000 $2.86	Get Quote

IXTP56N15 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
ixtp56n15t Abstract: 56N15 56N15T IXTP56n15 IXTA56N15T Contextual Info: IXTA56N15T IXTP56N15T TrenchTM Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 150V = 56A Ω ≤ 36mΩ TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 150 V	Original	ixta56n15t ixtp56n15t o-263 o-220ab +5062in 56n15t 1-12-a 56n15 ixtp56n15	PDF
IXTA56N15T Contextual Info: TrenchTM Power MOSFETs VDSS ID25 IXTA56N15T IXTP56N15T RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 150V = 56A Ω ≤ 36mΩ TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 150 V	Original	ixta56n15t ixtp56n15t o-263 260ff +256n15t 1-12-a	PDF
ixtp56n15t Abstract: IXTP56n15 56N15 56N15T IXTA56N15T mosfet ixtp56n15t ixta 56A4-1 IXTP5 Contextual Info: Preliminary Technical Information TrenchHVTM Power MOSFET IXTA56N15T IXTP56N15T VDSS ID25 RDS on = 150 V = 56 A Ω ≤ 36 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	ixta56n15t ixtp56n15t o-220 o-263 +756n15t ixtp56n15 56n15 mosfet ixtp56n15t ixta 56a4-1 ixtp5	PDF
IXGP70N33 Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim	Original	d-68623 ixbod1-08 ixbod1-09 ixbod1-10 +12dsep30-06br dsep30-12cr ixgp70n33 ixgq90n33 sk0604 ixtp76n075 ixer35n120d1 ixgp70n33tbm-a dh60-18a vbo19 sk0712 ixth1n250	PDF