50N28
Abstract: IXTA50N28T
Contextual Info: Preliminary Technical Information Trench Gate Power MOSFETs VDSS ID25 IXTA50N28T IXTP50N28T IXTQ50N28T RDS on = 280V = 50A Ω ≤ 66mΩ N-Channel Enhancement Mode For PDP Drivers TO-263 AA (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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Original
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IXTA50N28T
IXTP50N28T
IXTQ50N28T
O-263
IXTA50N28T
50N28T
50N28
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50N28
Abstract: 50N28T IXTA50N28T IXTQ50N28T
Contextual Info: Preliminary Technical Information IXTA50N28T IXTP50N28T IXTQ50N28T Trench Gate Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode For PDP Drivers = 280V = 50A ≤ 66mΩ Ω TO-263 AA (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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Original
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IXTA50N28T
IXTP50N28T
IXTQ50N28T
O-263
O-220AB
O-220
O-220
50N28
50N28T
IXTQ50N28T
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IXGP70N33
Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim
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D-68623
IXBOD1-08
IXBOD1-09
IXBOD1-10
DSEP30-06BR
DSEP30-12CR
IXGP70N33
IXGQ90N33
SK0604
IXTP76N075
IXER35N120D1
IXGP70N33TBM-A
DH60-18A
VBO19
SK0712
IXTH1N250
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