50N28
Abstract: IXTA50N28T
Contextual Info: Preliminary Technical Information Trench Gate Power MOSFETs VDSS ID25 IXTA50N28T IXTP50N28T IXTQ50N28T RDS on = 280V = 50A Ω ≤ 66mΩ N-Channel Enhancement Mode For PDP Drivers TO-263 AA (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
|
Original
|
ixta50n28tixtp50n28tixtq50n28to-263+250n28t50n28
|
PDF
|
50N28
Abstract: 50N28T IXTA50N28T IXTQ50N28T
Contextual Info: Preliminary Technical Information IXTA50N28T IXTP50N28T IXTQ50N28T Trench Gate Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode For PDP Drivers = 280V = 50A ≤ 66mΩ Ω TO-263 AA (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
|
Original
|
ixta50n28tixtp50n28tixtq50n28to-263+4o-220abo-22050n2850n28t
|
PDF
|
IXGP70N33
Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim
|
Original
|
d-68623ixbod1-08ixbod1-09ixbod1-10+12dsep30-06brdsep30-12crixgp70n33ixgq90n33sk0604ixtp76n075ixer35n120d1ixgp70n33tbm-adh60-18avbo19sk0712ixth1n250
|
PDF
|