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IXYS Corporation IXTP32P05T MOSFETs 32 Amps 50V 0.036 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTP32P05T		6,983			1 $3.45 10 $1.61 100 $1.42 1000 $1.11 10000 $1.11	Buy Now
IXYS Corporation IXTP36N30P MOSFETs 36 Amps 300V 0.11 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTP36N30P		4,695			1 $5.80 10 $2.89 100 $2.63 1000 $2.23 10000 $2.23	Buy Now
IXYS Corporation IXTP26P20P MOSFETs -26.0 Amps -200V 0.170 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics ()	IXTP26P20P		3,775			1 $8.08 10 $4.92 100 $4.50 1000 $4.07 10000 $4.07	Buy Now
	IXTP26P20P		3,774			1 $8.08 10 $4.92 100 $4.50 1000 $4.07 10000 $4.07	Buy Now
IXYS Corporation IXTP32P20T MOSFETs TenchP Power MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics ()	IXTP32P20T		2,850			1 $9.39 10 $5.25 100 $4.93 1000 $4.64 10000 $4.64	Buy Now
	IXTP32P20T		2,850			1 $9.71 10 $5.31 100 $4.96 1000 $4.64 10000 $4.64	Buy Now
IXYS Corporation IXTP96P085T MOSFETs -96 Amps -85V 0.013 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTP96P085T		2,046			1 $4.77 10 $3.41 100 $3.17 1000 $3.16 10000 $3.16	Buy Now

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IXTP IXTP IXTP IXTP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXTP IXTP IXTP IXTP Abstract: 2R4N50P Contextual Info: IXTP 2R4N50P IXTY 2R4N50P Advance Technical Information PolarHVTM Power MOSFET IXTP 2R4N50P IXTY 2R4N50P VDSS ID25 RDS on = 500 = 2.4 ≤ 3.75 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	2R4N50P IXTP IXTP IXTP IXTP 2R4N50P	PDF
98844 Contextual Info: High Voltage Power MOSFETs IXTA/IXTP 3N120 IXTA/IXTP 3N110 N-Channel Enhancement Mode Avalanche Rated, High dv/dt VDSS ID25 RDS on 1200 V 1100 V 3A 3A 4.5 Ω 4.0 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	3N120 3N110 3N110 O-220 O-263 125OC 98844	PDF
3n120 Abstract: 125OC 3N110 IXTP3N120 Contextual Info: High Voltage Power MOSFETs IXTA/IXTP 3N120 IXTA/IXTP 3N110 N-Channel Enhancement Mode Avalanche Rated, High dv/dt VDSS ID25 RDS on 1200 V 1100 V 3A 3A 4.5 Ω 4.0 Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	3N120 3N110 O-220 VDSS40 125OC 3n120 125OC 3N110 IXTP3N120	PDF
IXTP50N20PM Contextual Info: PolarHTTM Power MOSFET IXTP 50N20PM VDSS ID25 RDS on (Electrically Isolated Tab) = 200 V = 20 A ≤ 60 mΩ Ω N-Channel Enhancement Mode Avalanche Rated Maximum Ratings OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C	Original	50N20PM O-220 50N20P 02-16-06-E IXTP50N20PM	PDF
3n120 Abstract: 3N110 98844 Contextual Info: ADVANCE TECHNICAL INFORMATION High Voltage Power MOSFETs IXTA/IXTP 3N120 IXTA/IXTP 3N110 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 3N120 3N110 1200 1100 V V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	3N120 3N110 3N110 O-220 O-263 98844	PDF
Contextual Info: ADVANCE TECHNICAL INFORMATION Trench Power MOSFET ISOPLUS220TM IXTP 180N055T IXTQ 180N055T VDSS = 55 V ID25 = 180 A Ω RDS on = 4.0 mΩ TO-220 (IXTP) Symbol Test Conditions G Maximum Ratings VDSS TJ = 25°C to 150°C 55 V VGS Continuous ±20 V ID25 TC = 25°C; Note 1	Original	ISOPLUS220TM 180N055T 180N055T O-220 O-220) 123B1 728B1 065B1 IXTP180N055T	PDF
4N60P Abstract: IXTA4N60P IXTP4N60P IXTY4N60P Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA 4N60P IXTP 4N60P IXTY 4N60P VDSS ID25 RDS on = 600 = 4 ≤ 1.9 V A Ω N-Channel Enhancement Mode TO-220 (IXTP) G Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	4N60P O-220 O-263 4N60P IXTA4N60P IXTP4N60P IXTY4N60P	PDF
5n60p Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTA 5N60P IXTP 5N60P VDSS = 600 = 5 ID25 RDS on ≤ 1.6 V A W N-Channel Enhancement Mode TO-220 (IXTP) G Symbol VDSS VDGR VGSS VGSM Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	5N60P O-220 O-263 O-263 O-220) 405B2 5n60p	PDF
3N120 Abstract: transistor tl 187 125OC 3N110 IXTP IXTP IXTP IXTP Contextual Info: High Voltage Power MOSFETs IXTA/IXTP 3N120 IXTA/IXTP 3N110 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 3N120 3N110 1200 1100 V V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 3N120 3N110 1200 1100 V V VGS	Original	3N120 3N110 O-220 125OC 728B1 3N120 transistor tl 187 125OC 3N110 IXTP IXTP IXTP IXTP	PDF
100N055 Abstract: 20n60c 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D Contextual Info: Power MOSFETs N-Channel Depletion-Mode Type Package style DSS max. Tc = 25-C A Vos = 0V n pF 500 0.20 1000 0.10 30 110 1 20 1 20 ► New ► IXTP 02N50D ► IXTP 01N100D pF Outline drawings on page 91-100 w Fig. 3 TO-220AB Weight = 4 g 25 25 G = G a te. D = Drain	OCR Scan	02N50D 01N100D O-220AB O-247 20N60C 40N60C 75N60C 45N80C 100N055 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D	PDF
IXTP16N50PM Abstract: 16N50 16N50P Contextual Info: Advance Technical Information IXTP16N50PM PolarHVTM Power MOSFET VDSS ID25 RDS on = 500V = 7.5A Ω ≤ 420mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED (IXTP.M) OUTLINE Symbol Test Conditions	Original	IXTP16N50PM 16N50P 4-30-09-C IXTP16N50PM 16N50	PDF
IXTP18N60PM Abstract: 18N60P Contextual Info: Preliminary Technical Information IXTP18N60PM PolarHVTM Power MOSFET VDSS ID25 RDS on = 600V = 9A Ω ≤ 420mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol Test Conditions Maximum Ratings	Original	IXTP18N60PM O-220 18N60P 8-21-06-B IXTP18N60PM	PDF
IXTP22N50PM Abstract: 22N50 22N50P Contextual Info: Advance Technical Information IXTP22N50PM PolarHVTM Power MOSFET VDSS ID25 RDS on = 500V = 11A Ω ≤ 290mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED (IXTP.M) OUTLINE Symbol Test Conditions VDSS	Original	IXTP22N50PM 22N50P 1-09-A IXTP22N50PM 22N50	PDF
Contextual Info: Preliminary Technical Information PolarTM Power MOSFET IXTA7N60PM IXTP7N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600V = 4A Ω ≤ 1.1Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol	Original	IXTA7N60PM IXTP7N60PM O-220 7N60P 06-17-08-D	PDF

IXTA120P065T Abstract: IXTH120P065T IXTH120 120P065T IXTP120P065T P-CHANNEL 25A TO-247 POWER MOSFET Contextual Info: Preliminary Technical Information TrenchPTM Power MOSFET IXTA120P065T IXTP120P065T IXTH120P065T P-Channel Enhancement Mode Avalanche Rated VDSS ID25 = = ≤ RDS on - 65V - 120A Ω 10mΩ TO-263 (IXTA) G S (TAB) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings	Original	IXTA120P065T IXTP120P065T IXTH120P065T O-263 O-220 IXTA120P065T 120P065T IXTH120P065T IXTH120 IXTP120P065T P-CHANNEL 25A TO-247 POWER MOSFET	PDF
Contextual Info: Advance Technical Information IXTA64N10L2 IXTP64N10L2 IXTH64N10L2 LinearL2TM Power MOSFETs w/Extended FBSOA VDSS ID25 = 100V = 64A  32m  RDS on N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated TO-263AA (IXTA) G S D (Tab) TO-220AB (IXTP)	Original	IXTA64N10L2 IXTP64N10L2 IXTH64N10L2 O-263AA O-220AB O-247 tN10L2 O-247 O-220	PDF
IXTP12N50PM Abstract: 12n50p d1518 Contextual Info: PolarTM Power MOSFET IXTP12N50PM VDSS ID25 RDS on (Electrically Isolated Tab) trr = 500V = 6A Ω ≤ 500mΩ ≤ 300ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol Test Conditions Maximum Ratings	Original	IXTP12N50PM 300ns O-220 12N50P 4-14-08-D IXTP12N50PM d1518	PDF
IXTP12N50PM Contextual Info: PolarTM Power MOSFET VDSS ID25 IXTP12N50PM RDS on (Electrically Isolated Tab) trr = 500V = 6A Ω ≤ 500mΩ ≤ 300ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol Test Conditions Maximum Ratings	Original	IXTP12N50PM 300ns O-220 12N50P 4-14-08-D IXTP12N50PM	PDF
3N60P Contextual Info: Advance Technical Information IXTA 3N60P IXTP 3N60P IXTY 3N60P PolarHVTM Power MOSFET VDSS ID25 RDS on = 600 = 2.8 ≤ 2.8 V A Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	3N60P 405B2 3N60P	PDF
IXTH76P10T Abstract: IXTA76P10T VDSS -60 RDS 0,50 ID 1,8 A IXTP76P10T Contextual Info: IXTA76P10T IXTP76P10T IXTH76P10T TrenchPTM Power MOSFET VDSS ID25 = = ≤ RDS on P-Channel Enhancement Mode Avalanche Rated - 100V - 76A Ω 25mΩ TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXTA76P10T IXTP76P10T IXTH76P10T O-263 O-220AB O-247 IXTA76P10T 76P10T IXTH76P10T VDSS -60 RDS 0,50 ID 1,8 A IXTP76P10T	PDF
IXTU1N80P Abstract: T1N80 1N80P Contextual Info: Preliminary Technical Information PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated TO-263 IXTA G S VDSS ID25 IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P RDS(on) TO-251 (IXTU) TO-220 (IXTP) (TAB) G G (TAB) S Test Conditions VDSS TJ = 25°C to 150°C	Original	O-263 IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P O-251 O-220 IXTU1N80P T1N80 1N80P	PDF
Contextual Info: TrenchPTM Power MOSFET VDSS ID25 IXTA120P065T IXTP120P065T IXTH120P065T = = ≤ RDS on P-Channel Enhancement Mode Avalanche Rated - 65V - 120A Ω 10mΩ TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXTA120P065T IXTP120P065T IXTH120P065T O-263 O-220AB O-247 IXTA120P065T 120P065T	PDF
Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTP60N10TM = 100V = 33A Ω ≤ 19mΩ RDS on N-Channel Enhancement Mode Avalanche Rated OVERMOLDED TO-220 W/ FORMED LEAD (IXTP.M) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C	Original	IXTP60N10TM O-220 60N10T 7-08-A	PDF
Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET IXTP64N055T IXTY64N055T VDSS ID25 = = RDS on ≤ 55 V 64 A Ω 13 mΩ N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) G Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C	Original	IXTP64N055T IXTY64N055T O-220 O-252 64N055T	PDF

IXTP IXTP IXTP IXTP Search Results

IXTP IXTP IXTP IXTP Price and Stock

IXYS Corporation IXTP32P05T

IXYS Corporation IXTP36N30P

IXYS Corporation IXTP26P20P

IXYS Corporation IXTP32P20T

IXYS Corporation IXTP96P085T

IXTP IXTP IXTP IXTP Datasheets Context Search

IXTP IXTP IXTP IXTP

98844

3n120

IXTP50N20PM

3n120

4N60P

5n60p

3N120

100N055

IXTP16N50PM

IXTP18N60PM

IXTP22N50PM

IXTA120P065T

IXTP12N50PM

IXTP12N50PM

3N60P

IXTH76P10T

IXTU1N80P