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    1N80P

    Abstract: T1N80 IXTU1N80P IXTA1N80P IXTA1N80 IXTP1N80P
    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P N-Channel Enhancement Mode Avalanche Rated TO-263 IXTA G S VDSS ID25 RDS(on) TO-251 (IXTU) TO-220 (IXTP) (TAB) G G (TAB) D S Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original     		ixta1n80pixtp1n80pixtu1n80pixty1n80p+6o-263o-251o-2201n80pt1n80ixta1n80 PDF

    IXTU1N80P

    Abstract: T1N80 1N80P
    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated TO-263 IXTA G S VDSS ID25 IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P RDS(on) TO-251 (IXTU) TO-220 (IXTP) (TAB) G G (TAB) S Test Conditions VDSS TJ = 25°C to 150°C


    Original     		o-263ixta1n80pixtp1n80pixtu1n80p+5ixty1n80po-251o-220t1n801n80p PDF