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    IXTY1N80P Search Results

    IXTY1N80P Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTY1N80P
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 1A TO-252 Original PDF 5
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    IXTY1N80P Price and Stock

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    IXYS Corporation IXTY1N80P

    MOSFETs POLAR MOSFET WITH REDUCED RDS 800V 1A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTY1N80P
    • 1 $4.35
    • 10 $2.85
    • 100 $1.66
    • 1000 $1.65
    • 10000 $1.65
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    TTI IXTY1N80P Tube 350
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    TME IXTY1N80P 350
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    IXYS Corporation IXTY1N80P-TRL

    MOSFET Modules IXTY1N80P TRL
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    Mouser Electronics IXTY1N80P-TRL
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    TME IXTY1N80P-TRL 2,500
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    • 10000 $1.40
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    Littelfuse Inc IXTY1N80P

    MOSFET, N-CH, 800V, 1A, TO-252-3;
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    Newark IXTY1N80P Bulk 1
    • 1 $2.71
    • 10 $2.71
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    RS IXTY1N80P Bulk 8 Weeks 70
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    Onlinecomponents.com IXTY1N80P
    • 1 -
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    • 100 $1.51
    • 1000 $1.34
    • 10000 $1.23
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    Littelfuse Inc IXTY1N80P-TRL

    MOSFET, N-CH, 800V, 1A, TO-252-3;
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXTY1N80P-TRL Cut Tape 5
    • 1 -
    • 10 $3.66
    • 100 $2.64
    • 1000 $1.98
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    RS IXTY1N80P-TRL Bulk 8 Weeks 2,500
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    • 10000 $2.41
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    Onlinecomponents.com IXTY1N80P-TRL
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.44
    • 10000 $1.16
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    IXTY1N80P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1N80P

    Abstract: T1N80 IXTU1N80P IXTA1N80P IXTA1N80 IXTP1N80P
    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P N-Channel Enhancement Mode Avalanche Rated TO-263 IXTA G S VDSS ID25 RDS(on) TO-251 (IXTU) TO-220 (IXTP) (TAB) G G (TAB) D S Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original     		IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P O-263 O-251 O-220 1N80P T1N80 IXTU1N80P IXTA1N80P IXTA1N80 IXTP1N80P PDF

    IXTU1N80P

    Abstract: T1N80 1N80P
    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated TO-263 IXTA G S VDSS ID25 IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P RDS(on) TO-251 (IXTU) TO-220 (IXTP) (TAB) G G (TAB) S Test Conditions VDSS TJ = 25°C to 150°C


    Original     		O-263 IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P O-251 O-220 IXTU1N80P T1N80 1N80P PDF