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IXTP16N50PM Abstract: 16N50 16N50P Contextual Info: Advance Technical Information IXTP16N50PM PolarHVTM Power MOSFET VDSS ID25 RDS on = 500V = 7.5A Ω ≤ 420mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED (IXTP.M) OUTLINE Symbol Test Conditions	Original	ixtp16n50pm 16n50p 4-30-09-c 16n50	PDF

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IXTP16N50PM

Abstract: 16N50 16N50P
Contextual Info: Advance Technical Information IXTP16N50PM PolarHVTM Power MOSFET VDSS ID25 RDS on = 500V = 7.5A Ω ≤ 420mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED (IXTP.M) OUTLINE Symbol Test Conditions

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ixtp16n50pm 16n50p 4-30-09-c 16n50

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