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IXTP16N50PM Abstract: 16N50 16N50P Contextual Info: Advance Technical Information IXTP16N50PM PolarHVTM Power MOSFET VDSS ID25 RDS on = 500V = 7.5A Ω ≤ 420mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED (IXTP.M) OUTLINE Symbol Test Conditions	Original	IXTP16N50PM 16N50P 4-30-09-C IXTP16N50PM 16N50	PDF

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IXTP16N50PM

Abstract: 16N50 16N50P
Contextual Info: Advance Technical Information IXTP16N50PM PolarHVTM Power MOSFET VDSS ID25 RDS on = 500V = 7.5A Ω ≤ 420mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED (IXTP.M) OUTLINE Symbol Test Conditions

Original

IXTP16N50PM 16N50P 4-30-09-C IXTP16N50PM 16N50

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