IRF MOSFETS Search Results

IRF 850 mosfet

Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
Contextual Info: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF

IRF series

Abstract: for driver circuit for mosfet IRF240 IRF350 MOSFET driver IRF 543 MOSFET irf460 IRF 870 aK 9AA diode IRF450A irf150 compliment alps 83 7n
Contextual Info: IOR IRF Series Devices IRF Series Data Sheet a lp h a -n u m e ric order. W h e re the inform ation is d e v ic e spe c ific, w e h av e a s s ig n ed a num eric c h a ra cte r for the graph and an alph a c h a ra cte r to a given d evice. S e e T a b le A below . W h e re graphs

irf440

Contextual Info: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t

irf9630

Abstract: IRF9632 IRF9631
Contextual Info: HARRIS IR F9630, IRF9631 IRF 9632, IRF9633 Avalanche Energy Rated P-Channel Power MOSFETs A ug ust 1991 Package Features TO -2 2 0 A B • -5.5A and -6.5A , -1 5 0 V and -20 0 V TOP VIEW • r0s O N = 0 .8 0 and 1 .2 fl • Single Pulse Avalanche Energy Rated

Contextual Info: Government and Space Products International IQ R Rectifier •d Pa rt Num ber b vdss R DS on (V) (£ 1 T f= 2 S °C (A) Pd @ Tr= 2 5 °C T f= 10 0 °C (A ) (W ) Fax on Dem and Num ber Case O u t lin e Key Herm etic Packages HEXFET Power MOSFETs LCC IRf-'E9220

irf840 rf

Abstract: THOMSON DISTRIBUTOR IRF440 TO-247 irf350* to-247 package THOMSON 58E THOMSON DISTRIBUTOR 58e d IRF320 IRF322 irf420 IRF332
Contextual Info: THOnSON/ DISTRIBUTOR SflE 5 • TDEb&TB 0005707 ■ TCSK - Power MOSFETs IRF-Series Power MOSFETs — N-Channel Continued P a cka g e ^pr i » [j M a x im u m R a tin g s bvdss >d s (V) (A) rD S(O N ) O HM S 400 0 .3 0 0.40 0.40 0.50 1.15 1.30 1.35 1.50

IRF9511

Contextual Info: H a r r is IRF9510, IRF9511 IRF 9512 IRF9513 , Avalanche Energy Rated P-Channel Power MOSFETs Ja n u a ry 1 9 9 4 Package F e a tu re s • T O -220A B -2.5A and -3.0A , -8 0 V and -100V TOP VIEW • rDS ON = 1 -2 0 and 1 .6 ÎÎ • Single Pulse Avalanche Energy Rated

1RFP250

Abstract: IRF250 TO-247 THOMSON DISTRIBUTOR IRF631 irf630 irf640 IRF250 IRFD210 IRF331 irf220 IRF241
Contextual Info: T H O M SO N/ D I S T R I B U T O R SflE D • =¡021,073 0 0 05 70 b ZIE m TCSK Power MOSFETs IRF-Series Power MOSFETs — N-Channel Continued Package Maximum Ratings b v DSS (V) ■d s (A) rDS(ON) OHMS 150 4 4.50 5 5.5 1.20 8 9 16 18 25 30 200 0.25 0.32

Contextual Info: IRF120, IRF121 IRF122, IRF 123 31 HARRIS N-Channel Enhancem ent-M ode Power Field-Effect Transistors August 1991 Package Features T 0 -2 0 4 A A • 8.0A and 9.2A , 8 0 V - 100V BOTTOM VIEW • rD S on = 0 .2 7 f l and 0 .3 6 0 SOURCE • S O A is P ow er-D issip atio n Limited

F9530

Abstract: 9533E IRF9530
Contextual Info: H a r r is IRF9530, IR F 9531 IRF 9532 IRF9533 , Avalanche Energy Rated P-Channel Power MOSFETs January 1 9 9 4 Package F e a tu re s T 0 -2 2 0 A B TOP VIEW • -10 A and -1 2 A, -8 0 V and -100V • ro S O N “ 0 .3 f i and 0 .4 ÎÏ • Single Pulse Avalanche Energy Rated

Contextual Info: PD-95262 IRF5803PbF l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 112@VGS = -10V 190@VGS = -4.5V -3.4A -2.7A Description These P-channel HEXFET® Power MOSFETs from

IRf 334

Contextual Info: PD - 95503 IRF5804PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from

1RF9540

Abstract: l 9143 irf 409 IRF 9540 L 9141 IRF95XX IRF high current p-channel IRF9140 IRF9140 TO 220 IRF9540
Contextual Info: 7964142 SAMSUNG S E M I C O N D U C T O R INC Hfl DE 1 7 ^ 4 1 4 5 IRF9140/9141/9142/9143 IRFP9140/9141 /9142/9143 “ IRF9540/9541Z9542/9543_ ^ " D0GS40Ö t- P-CHANNEL POWER MOSFETS Preliminary Specifications - 1 0 0 Volt, 0.2 Ohm SFET PRODUCT SUMMARY

power MOSFET IRF data

Abstract: IRF Power MOSFET code marking IRF5850PBF mosfet p-channel 10A irf IRF5800 IRF5801 IRF5850 IRF5852 mosfet irf p-channel irf 2010
Contextual Info: PD - 95506 IRF5850PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier

IRF9120

Abstract: IRFP9120 IRF9120 mosfet IRF9121 IRF 9520 IRF 9120 IRF912213 IRF 9122 IRF9520 IRFP9121
Contextual Info: IRF9120/912110122/9123 « IRFP9120/9121 /9122/9123: IRF9520/9521 /9Ö22/9523 •. P-CHANNEL POWER MOSFETS P r e l i m i n a r y Sn&nifinatinncì Tfi DE 7 clfc>41Lt2 D0054DE 1 | ” uuv/i öUmiviAKY •y*' 3 ^ SAMSUNG SEM ICO ND UC TOR INC -1 0 0 volt, 0.60 Ohm SFET

IRF9640 irf9240

Abstract: irfp 9640 IRF9640 semiconductor IRF 9640 9243 f9640 IRF9642 FP9240 irfp9240
Contextual Info: D 98D 05420 _7964142 S A MS UN G SE MIC O N D U C T OR INC_ IRF9240/9241/9242/9243?-^l ^b4ji4d uuuò4du . f "V * ir m ii V k L ~ ’ IRFP9240/9241/9242/9243 POWER MOSFETS IRF9640/9641 /9642/9643 Tfl Preliminary Specifications D E | 7 cì b 4 1 , 4 2 000S4S0

irf9220

Abstract: IRF 9220 IRFP9220 IRFP9222 specification of mosfet irf IRFP9223 IRF9221 9223
Contextual Info: 7 T ti 4 m E DUUÌ4 Jj 4 ü IRF9220/9221/9222/9223 IRFP9220/9221/9222/9223 1RF9620/9621/9622/9623 Preliminary Specification SAMSUNG S POWER MOSFETS SEMIC ONDUCTOR INC ^fl rn u u u b i - 2 0 0 Volt, 1.5 Ohm SFET DE | T T b m M E o u iv n v iM n i RoS on •d

diode 9232

Abstract: 1RF9630 IRFP9230 irf963 IRF9632 IRF9630 9232
Contextual Info: F LÌI IRF9230/9231Z9232/9233 ^ ÏRFP9230/9231 /9232/923Ä IRF9630/9631/9632/9633 DE I 7^4145 D0QS417 3 | p -c h a n n e l POWER MOSFETS Preliminary Specifications PRODUCT SUMMARY -2 0 0 Volt, 0.8 Ohm SFET 7964142 SAMSUNG SEM ICONDUCTOR Part Number Vos RoS on

IRF Power MOSFET code marking

Abstract: IRF 535 IRF5800 IRF5850 SI3443DV IRF MOSFET 10A P MOSFET IRF 94
Contextual Info: PD - 96029 IRF5800PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free D A D 1 6 2 5 3 4 VDSS = -30V D G D S RDS on = 0.085Ω Top View Description These P-channel MOSFETs from International Rectifier

mosfet p-channel 300v irf

Abstract: P-Channel 200V MOSFET TSOP6 Si3443DVPbF IRF5850 IRF5851 IRF5852 mosfet 23 Tsop-6 PD-95240 p-channel 250V 30A power mosfet IRF 100A 500V
Contextual Info: PD-95240 Si3443DVPbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel -2.5V Rated Lead-Free D A D 1 6 2 5 3 4 VDSS = -20V D G D S RDS on = 0.065Ω Top View Description These P-channel MOSFETs from International Rectifier

IRF 511 MOSfet

Abstract: IRF5850 IRF5851 IRF5852 IRF5805PBF mosfet 23 Tsop-6
Contextual Info: PD -95340 IRF5805PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max ID -30V 0.098@VGS = -10V 0.165@VGS = -4.5V -3.8A Description These P-channel MOSFETs from International Rectifier

IRF MOSFET 10A P

Abstract: IRF5810 IRF5850 IRF5851 IRF5852
Contextual Info: PD - 95469A IRF5810PbF HEXFET Power MOSFET Ultra Low On-Resistance Dual P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free Description l l VDSS RDS on max (mW) ID -20V 90@VGS = -4.5V -2.9A 135@VGS = -2.5V -2.3A These P-channel HEXFET® Power MOSFETs from

TSOP-6 .54

Abstract: irf5850 TSOP6 Marking Code 17
Contextual Info: PD - 95506B IRF5850PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International

FR220

Abstract: IFU220 IRFU N-Channel Power MOSFETs FR 220 IRFU ir 222 IRF N-Channel Power MOSFETs RC 4565 IFU221
Contextual Info: m Ha r r is IRFR220/221/222 IRFU220/221/222 N-Channel Power MOSFETs Avalanche-Energy-Rated August 1991 Pa cka ges Features T O -2 5 1 A A T O P VIEW • 3.8A and 4.6A, 150V and 200V • rDS on = 0.80fi and 1.2fl >S O U R C E • Single Pulse Avalanche Energy Rated