F9630 Search Results

irf9630

Abstract: IRF9632 IRF9631
Contextual Info: HARRIS IR F9630, IRF9631 IRF 9632, IRF9633 Avalanche Energy Rated P-Channel Power MOSFETs A ug ust 1991 Package Features TO -2 2 0 A B • -5.5A and -6.5A , -1 5 0 V and -20 0 V TOP VIEW • r0s O N = 0 .8 0 and 1 .2 fl • Single Pulse Avalanche Energy Rated

irf9630

Abstract: IRFP9232 MOSFET IRF9630 diode 9232 IRFP9230 IRF9230 IRF9632 IRF9631
Contextual Info: F9630/9631/9632/9633 IRFP9230/9231/9232/9233 IRF9230/923179232/9233 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

k 3561 MOSFET

Abstract: TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20
Contextual Info: 1 Selection by Package The product listed in Tables 1 through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained by contacting a Motorola sale office in your area or by con­

IRF9630

Abstract: MOSFET IRF9630 IRF9631 IRF9633 irf P-Channel MOSFET audio c366 dsa 362 IRF9632
Contextual Info: HE D | 4055452 □□GâblE 1 | Data Sheet No. PD-9.352E INTERNATIONAL RECTIFIER / - 1 INTERNATIONAL RECTIFIER !- * • I« R HEXFET TRANSISTORS IRFSB30 IRFSB31 P-CHAIMSMEL 2 0 0 VO LT IRFSG32 POWER M OSFETs G IRF9633 -200 Volt, 0.8 Ohm HEXFET TO-22ÛAB Plastic Package

Contextual Info: | f a| f j 0 | * | ^ c | f j j Q | ^ £ | | •! 4655452 DDlMB^b SQ3 M I N R Rectifier HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling

irf9630

Abstract: MOSFET IRF9630 IRF9630 mosfet IRF9632 IRF9631
Contextual Info: P-CHANNEL POWER MOSFETS F9630/9631 /9632/9633 FEATURES • • • • • • • Lower R ds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

T0252AA

Abstract: T0263 IRF7205 BSS83 IRFR5305 T0-220AB IRF7204 IRF7304 SI4465DY SI4963DY
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4465D Y SI4965D Y IR F7204 IR F7304 SI4963D Y SI9430D Y SI9435D Y SI9933A D Y SI9953D Y IR F7205 IR F7406 IR F7416 S I4431A D Y