IRF9120
Abstract: 1rf830 1rf9530 IRF9122 IRF9513 IRF9141 IRF9512 IRF9523 IRF843 IRF9130
Contextual Info: - * sy € i± £ IR F 9522 IRF9523 IRF9530 IRF9531 IRF9532 IRF9533 »%^<n * f - 1 IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR ]R IR IR IR ¡R IR IR IR IR IR IR IR IR IR IR £ is V 500 N 45 0 P -100 P -60 P -100 P -60 P -100 P -60 P -100 P -60 P -200 P -150
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OCR Scan
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1rf842o-220abirf843t0-220ab+14irf9130irf92231rf9230irf9231irf92321rf9233irf91201rf8301rf9530irf9122irf9513irf9141irf9512irf9523
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F9222
Abstract: IRF9220 f 9222 l ir 9621 f9223 IRF9222 F9222 L F9222 T IRFP9620 IRFP9220
Contextual Info: IRF9620/9621 /9622/9623 IRFP9220/9221 /9222/9223 IRF9220/92211922219223 P-CHANNEL POWER MOSFETS FEATURES • Low er R ds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysiiicon gate cell structure Lower input capacitance
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OCR Scan
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irf9620/9621irfp9220/9221irf9220/9221f9620/ir+14irf9220irf9621/irfp9221irf9221f9622/irirf9222f9222f 9222 lir 9621f9223f9222 lf9222 tirfp9620irfp9220
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1rf730
Abstract: IRF9120 1rf9530 1RF640 1rf830 1RF840 IRF9512 IRF9141 IRF9523 IRF843
Contextual Info: - * sy i± € A Vds or £ * Vd g % V £ Vg s is Id Pd m m (Ta=25"C) less VG S th) I dss Vds= ft i# 14 b(on) Ds(on) g fs Ciss Coss Crss (*typ) (*typ) (*typ) (V) (A) * /CH (nA) m Vg s (V) ( M A) Vd s (V) min ma x (V) (V) (max) Id (mA) (max) (max) (max) (pF)
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OCR Scan
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1rf842o-220abirf843t0-220ab+13irf9130irf833irf840-220ab1rf730irf91201rf95301rf6401rf8301rf840irf9512irf9141irf9523
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IRF9120
Abstract: 1rf740 1rf730 IRF9223 1RF840 IRF9122 IRF9121 LM3661TL-1.25 IRF713 l 9143
Contextual Info: - 25 4 - f M tt £ ft Vd s or € X £ Vg s V Id Pd * /CH Vd g % fé <Ta=25cC ) (V) (A) ÏI Ig s s Vg s th) Id s s * /CH min (nA) m Vg s (V) ( HA ) Vd s (V) (V) Vi>s= Vg s max (V) % 1D (nA) ft (Ta=25‘ C) Id (on) Ds(on) g fs Ciss Coss Crss Vg s =0 (max)
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OCR Scan
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1rf642o-220abirf643irf644+13irf833irf840-220abirf91201rf7401rf730irf92231rf840irf9122irf9121lm3661tl-1.25irf713l 9143
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irf9220
Abstract: IRF 9220 IRFP9220 IRFP9222 specification of mosfet irf IRFP9223 IRF9221 9223
Contextual Info: 7 T ti 4 m E DUUÌ4 Jj 4 ü IRF9220/9221/9222/9223 IRFP9220/9221/9222/9223 1RF9620/9621/9622/9623 Preliminary Specification SAMSUNG S POWER MOSFETS SEMIC ONDUCTOR INC ^fl rn u u u b i - 2 0 0 Volt, 1.5 Ohm SFET DE | T T b m M E o u iv n v iM n i RoS on •d
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OCR Scan
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irf9220/9221/9222/9223irfp9220/9221/9222/92231rf9620/9621/9622/9623irf/irfp9220+14irf9620rf/irfp9221irf9621irf/irfp9222irf9622irf/irfp9223irf9220irf 9220irfp9220irfp9222specification of mosfet irfirfp9223irf92219223
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1rf830
Abstract: IRF9120 IRF9123 rf9220 IRF9122 1RF822 IRF9121 IRF831 1RF9140 IRF833
Contextual Info: - 296 - f m £ M. * Vd s or € £ Vg s V Id Pd 11 Id s s Igss Vg s th) % W 4# D s (on; Vns= 1Í CTa=25*C) b(on) Ciss g fs Coss Crss (V) * /CH * /CH (A) <W) (nA) Vg s (V) (|ì A) Vd s (V) m in max CV) (V) ft m m % V g s =0 Vg s Vd g h f é (Ta=25^C) (max)
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OCR Scan
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1rf822o-2201rf8231rf830+9irf831irf832irf833irf9120irf9123rf9220irf9122irf91211rf9140
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