F9222
Abstract: IRF9220 f 9222 l ir 9621 f9223 IRF9222 F9222 L F9222 T IRFP9620 IRFP9220
Contextual Info: IRF9620/9621 /9622/9623 IRFP9220/9221 /9222/9223 IRF9220/92211922219223 P-CHANNEL POWER MOSFETS FEATURES • Low er R ds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysiiicon gate cell structure Lower input capacitance
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OCR Scan
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irf9620/9621irfp9220/9221irf9220/9221f9620/ir+14irf9220irf9621/irfp9221irf9221f9622/irirf9222f9222f 9222 lir 9621f9223f9222 lf9222 tirfp9620irfp9220
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IRFP9540
Abstract: IRFP9610 IRFP9530 irfp9510 IRFP9520 IRFP9511 1RFP9240 IRFP9233 IRFP9531
Contextual Info: - H s € it € A Vds or £ Vg s % Vd g n fê <Ta=25^3 Id Ig s s Pd * /CH V g s th) Id s s * /CH min 4# tos on) Vd s Vg s max ft 'fe Ciss Coss Crss (*typ) (max) (pF) (*typ) (max) (pF) (*typ) (max) (pF) g fs iD (on ) s* & m % V g s =0 (max) *typ Vg s (0)
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OCR Scan
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1rfp92221rfp9223irfps230o-220+11irfp9543irfp9610irfp9611irfp9540irfp9530irfp9510irfp9520irfp95111rfp9240irfp9233irfp9531
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irf9220
Abstract: IRF 9220 IRFP9220 IRFP9222 specification of mosfet irf IRFP9223 IRF9221 9223
Contextual Info: 7 T ti 4 m E DUUÌ4 Jj 4 ü IRF9220/9221/9222/9223 IRFP9220/9221/9222/9223 1RF9620/9621/9622/9623 Preliminary Specification SAMSUNG S POWER MOSFETS SEMIC ONDUCTOR INC ^fl rn u u u b i - 2 0 0 Volt, 1.5 Ohm SFET DE | T T b m M E o u iv n v iM n i RoS on •d
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OCR Scan
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irf9220/9221/9222/9223irfp9220/9221/9222/92231rf9620/9621/9622/9623irf/irfp9220+14irf9620rf/irfp9221irf9621irf/irfp9222irf9622irf/irfp9223irf9220irf 9220irfp9220irfp9222specification of mosfet irfirfp9223irf92219223
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