IRF5852 Search Results

IRF5800

Abstract: IRF5801 IRF5804 IRF5806 IRF5810 IRF5850 IRF5851 IRF5852 SI3443DV
Contextual Info: IRF5852PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage

IRF5852

Contextual Info: PD - 95261A IRF5852PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free VDSS RDS on max (W) ID 20 V 0.090@VGS = 4.5V 0.120@VGS = 2.5V 2.7A 2.2A

SI3443DV

Abstract: IRF5806 IRF5852 MO-193-AA IRF5800 IRF5805 IRF5810 IRF5850 IRF5851 MO-193AA
Contextual Info: TSOP6 MO-193AA W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR Y = YEAR W = WEEK PART NUMBER TOP PART NUMBER CODE REFERENCE: A = SI3443DV B = IRF5800 C = IRF5850 D = IRF5851 E = IRF5852 I = IRF5805 J = IRF5806 K = IRF5810 LOT CODE YEAR Y 2001 2002

IRF5852

Abstract: IRF5800 IRF5805 IRF5806 IRF5850 IRF5851 SI3443DV IRF5820
Contextual Info: PD - 93999A IRF5852 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (W) ID 20 V 0.090@VGS = 4.5V 0.120@VGS = 2.5V 2.7A 2.2A Description These N-channel MOSFETs from International Rectifier

150V Single N-Channel Power MOSFET TSOP-6

Abstract: IRF5852 IRF5800 IRF5805 IRF5806 IRF5850 IRF5851 SI3443DV
Contextual Info: PD - 93999 IRF5852 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS Ω RDS on) max (Ω) ID 20 V 0.090@VGS = 4.5V 0.120@VGS = 2.5V 2.7A 2.2A Description These N-channel MOSFETs from International Rectifier

IRF5800

Abstract: IRF5801 IRF5806 IRF5810 IRF5850 IRF5851 IRF5852 SI3443DV IRF5852PBF
Contextual Info: PD - 95261 IRF5852PbF l l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free HEXFET Power MOSFET VDSS RDS on max (W) ID 20 V 0.090@VGS = 4.5V 0.120@VGS = 2.5V 2.7A 2.2A Description These N-channel MOSFETs from International Rectifier

international rectifier code

Abstract: MO-193AA IRF5850 IRF5852 IRF5800 IRF5805 IRF5806 IRF5851 IRF7702 SI3443DV
Contextual Info: TS0P6 MO-193AA W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR YEAR Y = YEAR PART NUMBER a i r " W =W EEK AYWLC TOP PART NUMBER CODE REFERENCE Ä = SI3443DV B= C= D= E= IRF5800 IRF5850 IRF5851 IRF5852 7 = IRF5805 7 = IRF5806 LOT CODE 2001 2002 2003

IRF 511 MOSfet

Abstract: IRF5850 IRF5851 IRF5852 IRF5805PBF mosfet 23 Tsop-6
Contextual Info: PD -95340 IRF5805PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max ID -30V 0.098@VGS = -10V 0.165@VGS = -4.5V -3.8A Description These P-channel MOSFETs from International Rectifier

mosfet p-channel 300v irf

Abstract: P-Channel 200V MOSFET TSOP6 Si3443DVPbF IRF5850 IRF5851 IRF5852 mosfet 23 Tsop-6 PD-95240 p-channel 250V 30A power mosfet IRF 100A 500V
Contextual Info: PD-95240 Si3443DVPbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel -2.5V Rated Lead-Free D A D 1 6 2 5 3 4 VDSS = -20V D G D S RDS on = 0.065Ω Top View Description These P-channel MOSFETs from International Rectifier

IRF5800

Abstract: IRF5803 SI3443DV sot-23 Marking 3D Switching Diode SOT23 Marking 3D Switching Diode SOT23 Marking 3J MARKING CODE 88 TSOP-6
Contextual Info: PD-94015 IRF5803 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS Ω RDS on) max (mΩ) ID -40V 112@VGS = -10V 190@VGS = -4.5V -3.4A -2.7A Description These P-channel HEXFET® Power MOSFETs from

IRF5820

Abstract: IRF5806 IRF5800 SI3443DV 3D marking sot23 sot-23 Marking 3D
Contextual Info: PD - 93997A IRF5806 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -4.0A Description These P-channel MOSFETs from International Rectifier

IRF5800

Abstract: IRF5802 IRF5805 IRF5850 IRF5851 IRF5852 SI3443DV AN1001 diode MARKING CODE 3J marking code 46 tsop-6
Contextual Info: PD- 94086 IRF5802 SMPS MOSFET HEXFET Power MOSFET VDSS Applications l High frequency DC-DC converters Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

IRf 334

Contextual Info: PD - 95503 IRF5804PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -40V 198@VGS = -10V 334@VGS = -4.5V -2.5A -2.0A Description These P-channel HEXFET® Power MOSFETs from

IRF P CHANNEL MOSFET

Abstract: irf p channel IRF5851 IRF5800 IRF5850 SI3443DV
Contextual Info: PD-93998 IRF5851 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 VDSS N-Ch P-Ch 20V -20V RDS on 0.090Ω 0.135Ω Description These N and P channel MOSFETs from International

IRF5802

Contextual Info: PD- 94086 IRF5802 SMPS MOSFET HEXFET Power MOSFET VDSS Applications l High frequency DC-DC converters Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

irf MOSFET p-CH

Abstract: IRF P CHANNEL MOSFET marking 27A sot-23 IRF5800 IRF5851 IRF5852 IRF n CHANNEL MOSFET marking 25b sot23
Contextual Info: PD-95341 IRF5851PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 VDSS N-Ch P-Ch 20V -20V RDS on 0.090Ω 0.135Ω Description

Contextual Info: PD - 93997A IRF5806 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -3.0A Description These P-channel MOSFETs from International Rectifier

power MOSFET IRF data

Abstract: IRF Power MOSFET code marking IRF5850PBF mosfet p-channel 10A irf IRF5800 IRF5801 IRF5850 IRF5852 mosfet irf p-channel irf 2010
Contextual Info: PD - 95506 IRF5850PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier

IRF Power MOSFET code marking

Abstract: IRF MOSFET 10A P power MOSFET IRF data MOSFET 150 N IRF IRF n 30v MOSFET IRF 5804 IRF5800 IRF5801 MOSFET IRF 94 IRF5852
Contextual Info: PD - 95476A IRF5806PbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -4.0A Description These P-channel MOSFETs from International Rectifier

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

Contextual Info: FOR REVIEW ONLY IRF5810 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS Ω RDS on) max (mΩ) ID -20V 90@VGS = -4.5V 135@VGS = -2.5V -2.9A -2.3A Description These P-channel HEXFET® Power MOSFETs from

Contextual Info: PD - 96411A IRFTS9342PbF HEXFET Power MOSFET VDS -30 V VGS max ±20 V D 40 mΩ 66 mΩ 12 nC -5.8 A RDS on max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg typ ID (@TA= 25°C) A D 1 6 D 2 5 D G 3 4 S TSOP-6 Top View Applications l l Battery operated DC motor inverter MOSFET

0.5-4A

Abstract: AN1001 IRF5800 IRF5801 IRF5806 IRF5810 IRF5850 IRF5851 IRF5852 SI3443DV
Contextual Info: PD- 95475A IRF5802PbF SMPS MOSFET HEXFET Power MOSFET VDSS Applications l High frequency DC-DC converters Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

IRFTS9342TRPBF

Abstract: 8342T IRFTS9342 6342T TSOP6 Marking Code 17 IRF 840 MOSFET IRF n 30v IRF5803
Contextual Info: PD - 96411A IRFTS9342PbF HEXFET Power MOSFET VDS -30 V VGS max ±20 V D 1 6 40 mΩ D 2 5 D 66 mΩ G 3 4 S 12 nC -5.8 A RDS on max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg typ ID (@TA= 25°C) A D TSOP-6 Top View Applications l l Battery operated DC motor inverter MOSFET