IRF 450 Search Results

IRF 850 mosfet

Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
Contextual Info: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF

D 823 transistor

Abstract: transistor IRF 450 821 transistor transistor D 822 P irf transistors transistor irf 500 transistor D 822 ON 823 823FI irf822f
Contextual Info: rz7 SGS-THOMSON [ÜD g»iIL[l RDD(gi IRF 820/FI-821/FI IRF 822/FI-823/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS IRF820 IRF820FI 500 V 500 V 3.0 3.0 IRF821 IRF821FI 450 V 450 V 3.0 3.0 IRF822 IRF822FI 500 V 500 V 4.0 4.0 IRF823 IRF823FI

IRf 334

Abstract: IRF 830 TRANSISTOR irf 830 Fi 830 application note using irf 830 diode on 832 irf ballast 831 transistor irf 832 IRF832
Contextual Info: SGS-THOMSON üLKgirœraOÊi IRF 830/FI-831/FI IRF 832/FI-833/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS IRF830 IRF830FI 500 V 500 V IRF831 IRF831FI 450 V 450 V IRF832 IRF832FI 500 V 500 V IRF833 IRF833FI 450 V 450 V ^DS on 1.5 fi 1.5 fi

N 821 Diode

Abstract: transistor IRF 450 821 transistor ON 823 D 823 transistor transistor D 822 irf transistor 822FI SC-0241 tr 821
Contextual Info: rz 7 A 7#. SCS-THOMSON IRF 820/FI-821/FI mnmglliigmiBiMnigi_ IRF 822/FI-823/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS RdS OI1 IRF820 IRF820FI 500 V 500 V 3.0 ß 3.0 ß IRF821 IRF821FI 450 V 450 V 3.0 ß 3.0 n 2.5 A 2.0 A IRF822

D 843 Transistor

Abstract: TRANSISTOR 841 irf 840 D 843 Power Transistor irf 44 n transistor irf 840 843 transistor 840FI irf 44 ns TRANSISTOR 843
Contextual Info: rZ7 SGS-THOMSON ^7# 0 M »IIU iraM O g S IRF 840/FI-841/FI IRF 842/FI-843/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^D S(on IRF840 IRF840FI 500 V 500 V 0.85 fi 0.85 fi IRF841 IRF841FI 450 V 450 V 0.85 fi 0.85 0 IRF842 IRF842FI 500 V

LG diode 831

Abstract: 831 transistor IRF 830 IRf 334 IRF 830 TRANSISTOR irf 831 SMPS using IRF830 IRF830Fi transistor 831 Fi 830
Contextual Info: S C S -T H O M S O N ^ 7 J IIIC T » » TM IRF 830/FI-831/FI IRF 832/FI-833/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF830 IRF830FI VDSS 500 V 500 V RDS on 1.5 Ü 1.5 Q 'o ' 4.5 A 3.0 A IRF831 IRF831FI 450 V 450 V 1.5 n 1.5 n 4.5 A 3.0 A

IRF450

Abstract: irf 44 ns irf p channel IRF452 irf 44 n irf 451
Contextual Info: G .7 J M TM SGS-THOMSON LKêTÏÏMMÊS IRF 450 - 451 IRF 452 - 453 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS IRF450 500 V 0.4 IRF451 450 V 0.4 IRF452 500 V 0.5 IRF453 450 V 0.5 R DS on fi fi fi fi 13 A 13 A 11 A 11 A • HIGH VOLTAGE - 450V FOR OFF LINE SMPS

uln2503

Abstract: irf250 datasheet METAL-CLAD Wire wound resistors 1000v 200w Transistor ULN400 rara irn W203 ULN200 transistor irf250 IRF 024
Contextual Info: Resistors And Resistive Applications IRN, ULN, IRF, ULF SLIM PROFILE WIRE WOUND, METAL CLAD RESISTORS The IRN N=narrow and flat & IRF(F=flat) models are metal-clad, wire-wound, high-power, extremely low inductance resistors designed for industrial and other applications where space is at a premium and performance is a must. The ULN and

irf 44 n

Abstract: irf 44 ns IRF 450 irf 451 IRF452 smps 450 W irf transistors IRF P channel IRF451
Contextual Info: Æ 7 IRF 450 - 451 IRF 452 - 453 S G S -T H O M S O N “ /# „ M M o IÜ IigïO M ïffl S § N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^ D S (o n ) IRF450 500 V 0.4 O IRF451 450 V 0.4 0 13 A IRF452 500 V 0.5 11 A IRF453 450 V 0.5 fi fi

J722

Abstract: IRF722FI 721F 723 voltage regulator internal diagram IRF720 IRF720FI IRF721 IRF721FI IRF722 IRF723
Contextual Info: 3DE D • 7^537 DQER7ÖC 1 S ■ ' ' T 73 c^ - \ \ / w T SGS-THOMSON S g S-THOMSON ' IRF 720/FI-721/FI IRF 722/FI-723/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Vqss ^DS on IRF720 IRF720FI 400 V 400 V 1.8 fi 1.8 fi 3.3 A 2.5 A IRF721 IRF721FI

OF IC 741

Abstract: internal circuit diagram of IC 741 internal structure of ic 741 internal diagram of 741 IC 741 IC circuit diagram ic 741 application 741 IC IRF 740 ic 741 DIODE 741 IC circuit applications
Contextual Info: Æ 7 SGS-THOMSON IRF 740/FI-741/FI IRF 742/FI-743/FI *•7 #» « »lllLICTW SSÖtEi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS(on 'd ' IRF740 IRF740FI 400 V 400 V 0.55 ß 0.55 S) 10 A 5.5 A IRF741 IRF741FI 350 V 350 V 0.55 0 0.55 0

Application of irf 720

Abstract: irf ballast IRF 720 IRF722FI
Contextual Info: SCS-THOMSON IRF 720/FI-721/FI IRF 722/FI-723/FI * it,. M»IHi gTïïMSD(g§ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS ^DS(on IRF720 IRF720FI 400 V 400 V 1.8 fi 1.8 0 'd " 3.3 A 2.5 A IRF721 IRF721FI 350 V 350 V 1.8 n 1.8 fi 3.3 A 2.5 A

IRF74Q

Abstract: IRF 740 N transistor irf 740 IRF740FI IRF743 IRF 740 IRFJ40 IRF741 ci 741 IRF740
Contextual Info: 3GE P • 7^2^237 G02cîô01 T ■ [Z T S G S -T H O M S O N 4 7#b S G S-THOMSON TYPE IRF740 IRF740FI IRF741 IRF741FI IRF742 IRF742FI IRF743 IRF743FI Vqss 400 V 400 V 350 V 350 V 400 V 400 V 350 V 350 V 'T - 'S eî - \ 3 IRF 740/FI-741/FI IRF 742/FI-743/FI

irf 740

Abstract: IRF 740 N IRF 324 transistor IRF 740 741 TC IRF741FI 742FI 740FI diode 742
Contextual Info: rZ 7 IRF 740/FI-741/FI IRF 742/FI-743/FI S G S -T H O M S O N [MD g[S(9 [i[L[l(gT»RilD(gi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS(on) 'd " IRF740 IRF740FI 400 V 400 V 0.55 n 0.55 fi 10 A 5.5 A IRF741 IRF741FI 350 V 350 V 0.55 0.55

irf440

Contextual Info: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t

IRF2001

Contextual Info: Lead Free POWER SOLUTION-NIKKOHM Metal-Clad Wire Wound Resistors IRN, IRF Features and Applications Very thin, 10mm thick light-weight metal clad wire wound power resistor. 50W to 500W rating power for chassis mounting. Excellent installation space factor.

C4840

Abstract: tennelec ortec 457 irf 539 tennelec tc-454 ortec 454 ortec TAC E3059-500 Hamamatsu microchannel plates irf 539 DATA
Contextual Info: MICROCHANNEL PLATEPHOTOMULTIPLIER TUBE R3809U-61/-63/-64 Compact High Sensitivity MCP-PMT Series Featuring with Fast Time Response FEATURES ●High Sensitivity QE: 12 % -61 , 36 % (-63), 40 % (-64) ●High Speed Rise Time: 200 ps (-61), 180 ps (-63/-64) IRF A (Instrument Response Function): 150 ps at FWHM: (-61)

ortec 457

Contextual Info: MICROCHANNEL PLATEPHOTOMULTIPLIER TUBE MCP-PMT R3809U-61/-63/-64 FEATURES ●High Sensitivity QE: 12 % (-61), 36 % (-63), 40 % (-64) ●High Speed Rise Time: 200 ps (-61), 180 ps (-63/-64) IRF A (Instrument Response Function): 150 ps at FWHM: (-61) 80 ps at FWHM: (-63/-64)

Contextual Info: *57 T YPE irfs IRF N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V dss RDS on Id IRF840 IRF840FI 500 V 500 V < 0.85 £2 < 0.85 a 8 A 4.5 A IRF841 IRF841FI 450 V 450 V < 0.85 ß < 0.85 ß 8 A 4.5 A • . ■ ■ 40 /fi 841/Fl SGS-THOMSON iLiOM)iQ(£I

Contextual Info: DATE REV ECN APP'D. BY 1/23/06 A1 7454 JM < q=e B h□ 125 [3.1B]±.D10 [0.25] c r"> irf NOTES: 1. CONNECTOR MATERIALS: HOUSING: THERMOPLASTIC UL94 V -0 CONTACTS/SHIELD: -.125 [3.1 B] I— COPPER ALLOY SHIELD PLATING: NICKEL OR TIN CONTACT PLATING: SELECTIVE GOLD IN CONTACT AREA

D 843 Transistor

Abstract: 843FI e IRF 840 Application of irf840 IRF840 transistor irf 840 IRF 100A irf 44 n irf 44 ns SC 63 840
Contextual Info: rZ Z * •1 Ë . SGS-THOM SON IRF 840/FI-841/FI « » IL lË T O M O e s_IRF 842/FI-843/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R d S od IRF840 IRF840FI 500 V 500 V 0.85 n 0.85 a IRF841 IRF841FI 450 V 450 V 0.85 n 0.85 Q IRF842

Contextual Info: -— DATE REV ECN APP'D. BY D 2-1 0 -G 5 AO - - .650 [16 .5 1 ] M AX — r .125 [3.18]- , +.020 [D.51] '125 L ila J -.010 [0_25] □ TWWW7 B fTJ cn irf .2+ 6 [6 .3 0 ] 3b • r R Dl I— .45 0 [1 1 .4 2 9 ]— .125 [3.1 B] -0 5 D [1.27] fñ l NOTES: .10 0 [2 .5 4 ] 8

irf 630

Abstract: AAIJ IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452
Contextual Info: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350

D 823 transistor

Abstract: transistor IRF 450 821 transistor irf transistors irf821 IRF820 IRF820FI IRF821FI IRF822 IRF822FI
Contextual Info: 30E D M 7cj5ci237 OQETflQ? 0 • ¿ Z T SGS-THOMSON ^7# RiöD [S IiIL[l©¥ S®Rflö©i S 6 S-THOMSON TYPE IRF820 IRF820FI IRF821 IRF821FI IRF822 IRF822FI IRF823 IRF823FI Voss 500 V 500 V 450 V 450 V 500 V 500 V 450 V 450 V ^DS(on 3.0 n 3.0 fi 3.0 fi