IPP12 Search Results

IPP12 Datasheets (41)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IPP120N04S3-02	Infineon Technologies	Single: N-Channel 40V MOSFETs; Package: PG-TO220-3; Technology: OptiMOS -T; V_DS (max): 40.0 V; R_{DS (on)} (max) (@10V): 2.3 mOhm; I_D (max): 120.0 A; R_thJC (max): 0.5 K/W;	Original	PDF	192.76KB	9
IPP120N04S302AKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 120A TO220-3	Original	PDF	195.1KB
IPP120N04S4-01	Infineon Technologies	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 120A TO220-3-1	Original	PDF		9
IPP120N04S401AKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 120A TO220-3-1	Original	PDF	155.62KB
IPP120N04S4-02	Infineon Technologies	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 120A TO220-3-1	Original	PDF		9
IPP120N04S402AKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 120A TO220-3-1	Original	PDF	161.46KB
IPP120N06NG	Infineon Technologies	OptiMOS Power-Transistor	Original	PDF	451.51KB	10
IPP120N06NG	Infineon Technologies	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 75A TO-220	Original	PDF		10
IPP120N06NGAKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 75A TO-220	Original	PDF	740.81KB
IPP120N06S4-02	Infineon Technologies	Single: N-Channel 60V MOSFETs; Package: PG-TO220-3; Technology: OptiMOS -T2; V_DS (max): 60.0 V; R_{DS (on)} (max) (@10V): 2.8 mOhm; I_D (max): 120.0 A; R_thJC (max): 0.8 K/W;	Original	PDF	171.17KB	9
IPP120N06S402AKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A TO220-3	Original	PDF	172.18KB
IPP120N06S402AKSA2	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A PG-TO220-3	Original	PDF	172.18KB
IPP120N06S4-03	Infineon Technologies	Single: N-Channel 60V MOSFETs; Package: PG-TO220-3; Technology: OptiMOS -T2; V_DS (max): 60.0 V; R_{DS (on)} (max) (@10V): 3.2 mOhm; I_D (max): 120.0 A; R_thJC (max): 0.9 K/W;	Original	PDF	170.55KB	9
IPP120N06S403AKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A TO220-3	Original	PDF	171.58KB

IPP120N06S403AKSA2	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A PG-TO220-3	Original	PDF	171.58KB
IPP120N06S4-H1	Infineon Technologies	Single: N-Channel 60V MOSFETs; Package: PG-TO220-3; Technology: OptiMOS -T2; V_DS (max): 60.0 V; R_{DS (on)} (max) (@10V): 2.4 mOhm; I_D (max): 120.0 A; R_thJC (max): 0.6 K/W;	Original	PDF	170.58KB	9
IPP120N06S4H1AKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A TO220-3	Original	PDF	171.61KB
IPP120N06S4H1AKSA2	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A TO220-3	Original	PDF	171.61KB
IPP120N08S403AKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH TO220-3	Original	PDF	228.88KB
IPP120N08S404AKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH TO220-3	Original	PDF	214.85KB

IPP12 Price and Stock

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Infineon Technologies AG IPP120N08S403AKSA1 MOSFET N-CH 80V 120A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPP120N08S403AKSA1	Tube	8,091		1	1 $4.58 10 $4.58 100 $2.77 1000 $2.69 10000 $2.69	Buy Now
Avnet Americas	IPP120N08S403AKSA1	Tube		9 Weeks	500	1 - 10 - 100 - 1000 $2.62 10000 $2.49	Buy Now
Mouser Electronics	IPP120N08S403AKSA1		1,448			1 $4.49 10 $4.01 100 $2.76 1000 $2.69 10000 $2.69	Buy Now
Rochester Electronics	IPP120N08S403AKSA1		2,845		1	1 - 10 - 100 $2.69 1000 $2.41 10000 $2.26	Buy Now
Chip One Stop	IPP120N08S403AKSA1	Tube	365	0 Weeks, 1 Days	1	1 $4.48 10 $4.02 100 $2.64 1000 $2.27 10000 $2.27	Buy Now

EBV Elektronik	IPP120N08S403AKSA1			10 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IPP120N04S402AKSA1 MOSFET N-CH 40V 120A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPP120N04S402AKSA1	Tube	288		1	1 $3.24 10 $3.24 100 $1.47 1000 $1.11 10000 $1.06	Buy Now
Mouser Electronics	IPP120N04S402AKSA1					1 $3.05 10 $1.63 100 $1.44 1000 $1.06 10000 $1.06	Get Quote
Rochester Electronics	IPP120N04S402AKSA1		270		1	1 - 10 - 100 $1.44 1000 $1.20 10000 $1.07	Buy Now
EBV Elektronik	IPP120N04S402AKSA1			10 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IPP120N20NFDAKSA1 MOSFET N-CH 200V 84A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPP120N20NFDAKSA1	Tube	68		1	1 $4.82 10 $4.82 100 $2.12 1000 $2.12 10000 $2.12	Buy Now
Avnet Americas	IPP120N20NFDAKSA1	Tube			500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Verical ()	IPP120N20NFDAKSA1		5,369		12	1 - 10 - 100 $4.42 1000 $4.42 10000 $4.42	Buy Now
	IPP120N20NFDAKSA1		1,000		500	1 - 10 - 100 - 1000 $1.80 10000 $1.77	Buy Now
Arrow Electronics	IPP120N20NFDAKSA1		1,000	16 Weeks	500	1 - 10 - 100 - 1000 $1.83 10000 $1.78	Buy Now
Newark	IPP120N20NFDAKSA1	Bulk			1	1 $5.09 10 $4.09 100 $2.20 1000 $2.20 10000 $2.20	Buy Now

Rochester Electronics	IPP120N20NFDAKSA1		35		1	1 - 10 - 100 $1.95 1000 $1.74 10000 $1.64	Buy Now
TME	IPP120N20NFDAKSA1		18		1	1 $6.48 10 $4.94 100 $3.70 1000 $3.70 10000 $3.70	Buy Now
Chip One Stop	IPP120N20NFDAKSA1	Tube	5,369	0 Weeks, 1 Days	1	1 $4.42 10 $4.42 100 $4.42 1000 $4.42 10000 $4.42	Buy Now
Win Source Electronics	IPP120N20NFDAKSA1		12,131			1 - 10 - 100 $3.51 1000 $3.15 10000 $3.15	Buy Now
Infineon Technologies AG IPP129N10NF2SAKMA1 TRENCH >=100V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPP129N10NF2SAKMA1	Tube	37		1	1 $1.77 10 $1.77 100 $0.86 1000 $0.58 10000 $0.50	Buy Now
Avnet Americas	IPP129N10NF2SAKMA1	Tube		18 Weeks	1,000	1 - 10 - 100 - 1000 $0.44 10000 $0.41	Buy Now
Mouser Electronics	IPP129N10NF2SAKMA1		1,120			1 $1.74 10 $1.65 100 $0.88 1000 $0.59 10000 $0.50	Buy Now
Verical ()	IPP129N10NF2SAKMA1		106,000		1,000	1 - 10 - 100 - 1000 $1.29 10000 $1.29	Buy Now
	IPP129N10NF2SAKMA1		3,126		443	1 - 10 - 100 - 1000 $0.70 10000 $0.63	Buy Now
	IPP129N10NF2SAKMA1		1,018		49	1 - 10 - 100 $0.90 1000 $0.69 10000 $0.69	Buy Now
	IPP129N10NF2SAKMA1		975		15	1 - 10 - 100 $0.60 1000 $0.47 10000 $0.44	Buy Now
Arrow Electronics	IPP129N10NF2SAKMA1		975	18 Weeks	1	1 $0.65 10 $0.55 100 $0.54 1000 $0.44 10000 $0.43	Buy Now

Rochester Electronics	IPP129N10NF2SAKMA1		3,430		1	1 - 10 - 100 $0.68 1000 $0.56 10000 $0.50	Buy Now
TME	IPP129N10NF2SAKMA1		975		50	1 - 10 - 100 $0.82 1000 $0.82 10000 $0.82	Buy Now
Chip One Stop	IPP129N10NF2SAKMA1	Tube	1,018	0 Weeks, 1 Days	1	1 $1.71 10 $1.56 100 $0.86 1000 $0.56 10000 $0.49	Buy Now
EBV Elektronik	IPP129N10NF2SAKMA1			19 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Samtec Inc IPP1-25-1 URSA I/O ULTRA RUGGED CABLE TERM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPP1-25-1	Bulk	19		1	1 $0.96 10 $0.81 100 $0.69 1000 $0.59 10000 $0.55	Buy Now
Avnet Americas	IPP1-25-1	Bulk		1 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	IPP1-25-1		160			1 $1.09 10 $1.09 100 $0.91 1000 $0.78 10000 $0.53	Buy Now

Find more IPP12 price and stock on Findchips.com

IPP12 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
120N06N Abstract: 120N06 IPB120N06N PG-TO220-3 ISS 99 diode ipp120n06ng Contextual Info: IPB120N06N G OptiMOS Power-Transistor IPP120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 60 11.7 SMDversion ID 75 V mΩ A • 175 °C operating temperature	Original	IPB120N06N IPP120N06N P-TO220-3-1 P-TO263-3-2 120N06N 120N06N 120N06 PG-TO220-3 ISS 99 diode ipp120n06ng	PDF
IPB120N06N Abstract: 120N06N IPP120N06N IEC61249-2-21 PG-TO220-3 SMD diode D94 Contextual Info: IPB120N06N G OptiMOS Power-Transistor IPP120N06N G Product Summary Features 60 V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 11.7 SMDversion 75 ID V mΩ A • 175 °C operating temperature	Original	IPB120N06N IPP120N06N IEC61249-2-21 P-TO220-3-1 P-TO263-3-2 120N06N 120N06N IEC61249-2-21 PG-TO220-3 SMD diode D94	PDF
12CN10N Abstract: IPI12CN10N IPP12CN10N PG-TO220-3 GS250 IPD12CN10 Contextual Info: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)	Original	IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 PG-TO252-3 12CN10N PG-TO220-3 GS250 IPD12CN10	PDF
12CN10N Contextual Info: IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max (TO252) 12.4 mW ID • Very low on-resistance R DS(on)	Original	IPB12CN10N IPD12CN10N IPI12CN10N IPP12CN10N IEC61249-2-21 PG-TO263-3 12CN10N	PDF
4N06H1 Abstract: IPP120N06S4-H1 marking H1 IPB120N06S4-H1 IPI120N06S4-H1 PG-TO263-3-2 Contextual Info: IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 2.1 mΩ ID 120 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow	Original	IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N06H1 IPI120N06S4-H1 4N06H1 IPP120N06S4-H1 marking H1 IPB120N06S4-H1 IPI120N06S4-H1 PG-TO263-3-2	PDF
12CN10N Abstract: IPI12CN10N IPP12CN10N PG-TO220-3 diode d335 12CN10 Contextual Info: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)	Original	IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 PG-TO252-3 12CN10N PG-TO220-3 diode d335 12CN10	PDF
12CN10N Abstract: IPP12CN10N IPI12CN10N PG-TO220-3 d67a Contextual Info: IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS 2 Power-Transistor Features Product Summary • N-channel, normal level V DS 100 V R DS on ,max (TO252) 12.4 mΩ • Excellent gate charge x R DS(on) product (FOM) ID • Very low on-resistance R DS(on)	Original	IPB12CN10N IPD12CN10N IPI12CN10N IPP12CN10N PG-TO263-3 PG-TO252-3 12CN10N PG-TO220-3 d67a	PDF
4N0401 Abstract: IPB120N04S4-01 IPI120N04S4-01 IPP120N04S4-01 PG-TO263-3-2 Contextual Info: IPB120N04S4-01 IPI120N04S4-01, IPP120N04S4-01 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 1.5 mΩ ID 120 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow	Original	IPB120N04S4-01 IPI120N04S4-01, IPP120N04S4-01 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0401 IPI120N04S4-01 4N0401 IPB120N04S4-01 IPI120N04S4-01 IPP120N04S4-01 PG-TO263-3-2	PDF
Contextual Info: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)	Original	IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N PG-TO263-3 PG-TO252-3	PDF
4n0603 Abstract: 4N06 4N060 IPB120N06S4-03 IPI120N06S4-03 IPP120N06S4-03 PG-TO263-3-2 Contextual Info: IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 2.8 mΩ ID 120 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow	Original	IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0603 IPI120N06S4-03 4n0603 4N06 4N060 IPB120N06S4-03 IPI120N06S4-03 IPP120N06S4-03 PG-TO263-3-2	PDF
12CN10L Abstract: D345 JESD22 PG-TO220-3 10069a IPP12CN10LG Contextual Info: IPS12CN10L G IPP12CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 12 mΩ ID 69 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	IPS12CN10L IPP12CN10L PG-TO220-3 PG-TO251-3-11 12CN10L 12CN10L D345 JESD22 PG-TO220-3 10069a IPP12CN10LG	PDF
Contextual Info: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)	Original	IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N PG-TO263-3 12CNE8N	PDF
12CN10L Abstract: D345 c25 diode to220 D83a Contextual Info: IPS12CN10L G IPP12CN10L G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • N-channel, logic level R DS on ,max 12 m: ID 69 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	IPS12CN10L IPP12CN10L PG-TO220-3 12CN10L PG-TO251-3 12CN10L D345 c25 diode to220 D83a	PDF
120N06N Abstract: 120N06 Contextual Info: IPB120N06N G OptiMOS Power-Transistor IPP120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 60 11.7 SMDversion ID 75 V mΩ A • 175 °C operating temperature	Original	IPB120N06N IPP120N06N P-TO220-3-1 120N06N P-TO263-3-2 120N06N 120N06	PDF

3PN0402 Abstract: IPB120N04S3-02 ANPS071E IPI120N04S3-02 IPP120N04S3-02 PG-TO263-3-2 infineon smd package Contextual Info: IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 2.0 mΩ ID 120 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1	Original	IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3PN0402 IPI120N04S3-02 3PN0402 IPB120N04S3-02 ANPS071E IPI120N04S3-02 IPP120N04S3-02 PG-TO263-3-2 infineon smd package	PDF
120N06N Abstract: 120N06 IPP120N06N IPB120N06N ipp120n06ng IPP120N06N G Contextual Info: IPB120N06N G OptiMOS Power-Transistor IPP120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 60 11.7 SMDversion ID 75 V mΩ A • 175 °C operating temperature	Original	IPB120N06N IPP120N06N P-TO220-3-1 120N06N P-TO263-3-2 68-1n 120N06N 120N06 ipp120n06ng IPP120N06N G	PDF
AE8 diode Abstract: 4a8 diode diode marking A43 DIODE S6 4aa BV99 aA88 IPB120N06N G Contextual Info: IPB120N06N G IPP120N06N G "%&$!"# Power-Transistor Product Summary Features . V 9G O >@50ABAE8 B 2 78=6 2 >=D4@B 4@A 0=3 AG=2 @42 B 858 2 0B 8>= R + >=< 0F + & O ' 2 70=4;4=70=2 4< 4=B =>@< 0;4D4; I &/ D4@A8 >= X" /- I9 6 O R >? 4@0B 8=6 B	Original	IPB120N06N IPP120N06N AE8 diode 4a8 diode diode marking A43 DIODE S6 4aa BV99 aA88 IPB120N06N G	PDF
4P04L03 Abstract: IPP120P04P4L-03 IPB120P04P4L-03 Contextual Info: IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 3.1 mW ID -120 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1	Original	IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI120P04P4L-03 4P04L03 IPP120P04P4L-03	PDF
infineon marking TO-252 Abstract: IEC61249-2-21 IPD12CNE8N IPP12CNE8N PG-TO220-3 12CNE8N Contextual Info: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)	Original	IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N IEC61249-2-21 PG-TO263-3 infineon marking TO-252 IEC61249-2-21 PG-TO220-3 12CNE8N	PDF
12CN10N Abstract: 12CN10 diode d335 d67a IPP12CN10N D-335 IPD12CN10NG IPB12CN10N G Contextual Info: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)	Original	IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 12CN10N 12CN10N 12CN10 diode d335 d67a D-335 IPD12CN10NG IPB12CN10N G	PDF
12CN10N Contextual Info: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features V DS 100 V • N-channel, normal level R DS on ,max (TO252) 12.4 m: • Excellent gate charge x R DS(on) product (FOM) ID 67 A • Very low on-resistance R DS(on)	Original	IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 12CN10N 12CN10N	PDF
4n0602 Abstract: 4N060 marking 206a IPB120N06S4-02 IPP120N06S4-02 SMD BR 32 IPI120N06S4-02 PG-TO263-3-2 Contextual Info: IPB120N06S4-02 IPI120N06S4-02, IPP120N06S4-02 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 2.4 mΩ ID 120 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow	Original	IPB120N06S4-02 IPI120N06S4-02, IPP120N06S4-02 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0602 IPI120N06S4-02 4n0602 4N060 marking 206a IPB120N06S4-02 IPP120N06S4-02 SMD BR 32 IPI120N06S4-02 PG-TO263-3-2	PDF
4N0402 Abstract: IPB120N04S4-02 IPP120N04S4-02 IPI120N04S4-02 PG-TO263-3-2 Contextual Info: IPB120N04S4-02 IPI120N04S4-02, IPP120N04S4-02 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 1.8 mΩ ID 120 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow	Original	IPB120N04S4-02 IPI120N04S4-02, IPP120N04S4-02 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0402 IPI120N04S4-02 4N0402 IPB120N04S4-02 IPP120N04S4-02 IPI120N04S4-02 PG-TO263-3-2	PDF
126N10N Abstract: 123N10N IEC61249-2-21 IPI126N10N3 PG-TO220-3 Contextual Info: IPP126N10N3 G IPB123N10N3 G OptiMOSTM3 Power-Transistor IPI126N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 12.3 mΩ ID 58 A • Very low on-resistance R DS(on)	Original	IPP126N10N3 IPB123N10N3 IPI126N10N3 O-263 IEC61249-2-21 PG-TO220-3 PG-TO263-3 126N10N 123N10N IEC61249-2-21 PG-TO220-3	PDF

IPP12 Search Results

IPP12 Datasheets (41)

IPP12 Price and Stock

Infineon Technologies AG IPP120N08S403AKSA1

Infineon Technologies AG IPP120N04S402AKSA1

Infineon Technologies AG IPP120N20NFDAKSA1

Infineon Technologies AG IPP129N10NF2SAKMA1

Samtec Inc IPP1-25-1

IPP12 Datasheets Context Search

120N06N

IPB120N06N

12CN10N

12CN10N

4N06H1

12CN10N

12CN10N

4N0401

4n0603

12CN10L

12CN10L

120N06N

3PN0402

120N06N

AE8 diode

4P04L03

infineon marking TO-252

12CN10N

12CN10N

4n0602

4N0402

126N10N