IPP12 Search Results

IPP12 Datasheets (41)

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Infineon Technologies

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IPP120N04S3-02	Infineon Technologies	Single: N-Channel 40V MOSFETs; Package: PG-TO220-3; Technology: OptiMOS -T; V_DS (max): 40.0 V; R_{DS (on)} (max) (@10V): 2.3 mOhm; I_D (max): 120.0 A; R_thJC (max): 0.5 K/W;	Original	PDF	192.76KB	9
IPP120N04S302AKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 120A TO220-3	Original	PDF	195.1KB
IPP120N04S4-01	Infineon Technologies	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 120A TO220-3-1	Original	PDF		9
IPP120N04S401AKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 120A TO220-3-1	Original	PDF	155.62KB
IPP120N04S4-02	Infineon Technologies	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 120A TO220-3-1	Original	PDF		9
IPP120N04S402AKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 120A TO220-3-1	Original	PDF	161.46KB
IPP120N06NG	Infineon Technologies	OptiMOS Power-Transistor	Original	PDF	451.51KB	10
IPP120N06NG	Infineon Technologies	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 75A TO-220	Original	PDF		10
IPP120N06NGAKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 75A TO-220	Original	PDF	740.81KB
IPP120N06S4-02	Infineon Technologies	Single: N-Channel 60V MOSFETs; Package: PG-TO220-3; Technology: OptiMOS -T2; V_DS (max): 60.0 V; R_{DS (on)} (max) (@10V): 2.8 mOhm; I_D (max): 120.0 A; R_thJC (max): 0.8 K/W;	Original	PDF	171.17KB	9
IPP120N06S402AKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A TO220-3	Original	PDF	172.18KB
IPP120N06S402AKSA2	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A PG-TO220-3	Original	PDF	172.18KB
IPP120N06S4-03	Infineon Technologies	Single: N-Channel 60V MOSFETs; Package: PG-TO220-3; Technology: OptiMOS -T2; V_DS (max): 60.0 V; R_{DS (on)} (max) (@10V): 3.2 mOhm; I_D (max): 120.0 A; R_thJC (max): 0.9 K/W;	Original	PDF	170.55KB	9
IPP120N06S403AKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A TO220-3	Original	PDF	171.58KB

IPP120N06S403AKSA2	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A PG-TO220-3	Original	PDF	171.58KB
IPP120N06S4-H1	Infineon Technologies	Single: N-Channel 60V MOSFETs; Package: PG-TO220-3; Technology: OptiMOS -T2; V_DS (max): 60.0 V; R_{DS (on)} (max) (@10V): 2.4 mOhm; I_D (max): 120.0 A; R_thJC (max): 0.6 K/W;	Original	PDF	170.58KB	9
IPP120N06S4H1AKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A TO220-3	Original	PDF	171.61KB
IPP120N06S4H1AKSA2	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A TO220-3	Original	PDF	171.61KB
IPP120N08S403AKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH TO220-3	Original	PDF	228.88KB
IPP120N08S404AKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH TO220-3	Original	PDF	214.85KB

IPP12 Price and Stock

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Infineon Technologies AG


Infineon Technologies AG IPP126N10N3GXKSA1 Trans MOSFET N-CH 100V 58A 3-Pin(3+Tab) TO-220 Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical ()	IPP126N10N3GXKSA1		123,887		350	1 - 10 - 100 - 1000 $0.89 10000 $0.79	Buy Now
	IPP126N10N3GXKSA1		3,000		350	1 - 10 - 100 - 1000 $0.89 10000 $0.79	Buy Now
	IPP126N10N3GXKSA1		500		350	1 - 10 - 100 - 1000 $0.89 10000 $0.79	Buy Now
	IPP126N10N3GXKSA1		500		350	1 - 10 - 100 - 1000 $0.89 10000 $0.79	Buy Now
Bristol Electronics	IPP126N10N3GXKSA1		226			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	IPP126N10N3GXKSA1		127,893		1	1 - 10 - 100 $0.86 1000 $0.71 10000 $0.64	Buy Now
Vyrian	IPP126N10N3GXKSA1		9,405			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG IPP12CN10LGXKSA1 Trans MOSFET N-CH 100V 69A 3-Pin(3+Tab) TO-220 Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical ()	IPP12CN10LGXKSA1		50,500		341	1 - 10 - 100 - 1000 $0.91 10000 $0.81	Buy Now
	IPP12CN10LGXKSA1		19,200		341	1 - 10 - 100 - 1000 $0.91 10000 $0.81	Buy Now
	IPP12CN10LGXKSA1		10,600		341	1 - 10 - 100 - 1000 $0.91 10000 $0.81	Buy Now
	IPP12CN10LGXKSA1		1,950		341	1 - 10 - 100 - 1000 $0.91 10000 $0.81	Buy Now
	IPP12CN10LGXKSA1		500		341	1 - 10 - 100 - 1000 $0.91 10000 $0.81	Buy Now
	IPP12CN10LGXKSA1		500		341	1 - 10 - 100 - 1000 $0.91 10000 $0.81	Buy Now
	IPP12CN10LGXKSA1		460		341	1 - 10 - 100 - 1000 $0.91 10000 $0.81	Buy Now
	IPP12CN10LGXKSA1		262		9	1 - 10 $0.68 100 $0.68 1000 $0.68 10000 $0.68	Buy Now
	IPP12CN10LGXKSA1		88		2	1 - 10 $1.99 100 $1.99 1000 $1.99 10000 $1.99	Buy Now
Arrow Electronics ()	IPP12CN10LGXKSA1		262		1	1 $0.68 10 $0.68 100 $0.68 1000 $0.68 10000 $0.68	Buy Now
	IPP12CN10LGXKSA1		88	16 Weeks	1	1 $1.99 10 $1.99 100 $1.99 1000 $1.99 10000 $1.99	Buy Now
Rochester Electronics	IPP12CN10LGXKSA1		83,740		1	1 - 10 - 100 $0.88 1000 $0.73 10000 $0.65	Buy Now
Infineon Technologies AG IPP120N20NFDAKSA1 Trans MOSFET N-CH 200V 84A 3-Pin(3+Tab) TO-220 Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	IPP120N20NFDAKSA1		5,204		1	1 $4.31 10 $4.31 100 $4.31 1000 $4.31 10000 $4.31	Buy Now
Arrow Electronics	IPP120N20NFDAKSA1		5,204	16 Weeks	1	1 $4.31 10 $4.31 100 $4.31 1000 $4.31 10000 $4.31	Buy Now
Rutronik	IPP120N20NFDAKSA1	Tube	200		1	1 - 10 - 100 - 1000 $2.30 10000 $1.88	Buy Now
Win Source Electronics	IPP120N20NFDAKSA1		11,280			1 - 10 - 100 $3.30 1000 $2.95 10000 $2.95	Buy Now
Infineon Technologies AG IPP120N08S4-03 Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) TO-220 Tube Automotive AEC-Q101
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	IPP120N08S4-03		500		13	1 - 10 - 100 $5.61 1000 $5.29 10000 $5.29	Buy Now
Quest Components	IPP120N08S4-03		400			1 $11.71 10 $11.71 100 $11.71 1000 $5.85 10000 $5.85	Buy Now
TME	IPP120N08S4-03		500		13	1 - 10 - 100 $4.45 1000 $4.41 10000 $4.41	Buy Now
Infineon Technologies AG IPP120N08S403AKSA1 Trans MOSFET N-CH 80V 120A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP120N08S403AKSA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	IPP120N08S403AKSA1	Tube		12 Weeks	500	1 - 10 - 100 - 1000 $2.83 10000 $2.70	Buy Now
Mouser Electronics	IPP120N08S403AKSA1		1,208			1 $7.29 10 $4.04 100 $3.70 1000 $3.12 10000 $3.12	Buy Now
Arrow Electronics ()	IPP120N08S403AKSA1		500	12 Weeks	1	1 $6.02 10 $6.02 100 $6.02 1000 $6.02 10000 $6.02	Buy Now
	IPP120N08S403AKSA1		265	12 Weeks	1	1 $6.08 10 $6.08 100 $6.08 1000 $6.08 10000 $6.08	Buy Now
Rochester Electronics	IPP120N08S403AKSA1		3,262		1	1 - 10 - 100 $2.69 1000 $2.41 10000 $2.26	Buy Now
TME	IPP120N08S403AKSA1				500	1 - 10 - 100 - 1000 $3.24 10000 $3.24	Get Quote

EBV Elektronik	IPP120N08S403AKSA1			13 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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IPP12 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
120N06N Abstract: 120N06 IPB120N06N PG-TO220-3 ISS 99 diode ipp120n06ng Contextual Info: IPB120N06N G OptiMOS Power-Transistor IPP120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 60 11.7 SMDversion ID 75 V mΩ A • 175 °C operating temperature	Original	ipb120n06n ipp120n06n p-to220-3-1 p-to263-3-2 +5120n06n 120n06 pg-to220-3 iss 99 diode ipp120n06ng	PDF
IPB120N06N Abstract: 120N06N IPP120N06N IEC61249-2-21 PG-TO220-3 SMD diode D94 Contextual Info: IPB120N06N G OptiMOS Power-Transistor IPP120N06N G Product Summary Features 60 V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 11.7 SMDversion 75 ID V mΩ A • 175 °C operating temperature	Original	ipb120n06n ipp120n06n iec61249-2-21 p-to220-3-1 +4p-to263-3-2 120n06n pg-to220-3 smd diode d94	PDF
12CN10N Abstract: IPI12CN10N IPP12CN10N PG-TO220-3 GS250 IPD12CN10 Contextual Info: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)	Original	ipb12cn10n ipi12cn10n ipd12cn10n ipp12cn10n +6pg-to263-3 pg-to252-3 12cn10n pg-to220-3 gs250 ipd12cn10	PDF
12CN10N Contextual Info: IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max (TO252) 12.4 mW ID • Very low on-resistance R DS(on)	Original	ipb12cn10n ipd12cn10n ipi12cn10n ipp12cn10n +3iec61249-2-21 pg-to263-3 12cn10n	PDF
4N06H1 Abstract: IPP120N06S4-H1 marking H1 IPB120N06S4-H1 IPI120N06S4-H1 PG-TO263-3-2 Contextual Info: IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 2.1 mΩ ID 120 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow	Original	ipb120n06s4-h1 ipi120n06s4-h1 ipp120n06s4-h1 pg-to263-3-2 +4pg-to262-3-1 pg-to220-3-1 4n06h1 marking h1	PDF
12CN10N Abstract: IPI12CN10N IPP12CN10N PG-TO220-3 diode d335 12CN10 Contextual Info: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)	Original	ipb12cn10n ipi12cn10n ipd12cn10n ipp12cn10n +6pg-to263-3 pg-to252-3 12cn10n pg-to220-3 diode d335 12cn10	PDF
12CN10N Abstract: IPP12CN10N IPI12CN10N PG-TO220-3 d67a Contextual Info: IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS 2 Power-Transistor Features Product Summary • N-channel, normal level V DS 100 V R DS on ,max (TO252) 12.4 mΩ • Excellent gate charge x R DS(on) product (FOM) ID • Very low on-resistance R DS(on)	Original	ipb12cn10n ipd12cn10n ipi12cn10n ipp12cn10n +5pg-to263-3 pg-to252-3 12cn10n pg-to220-3 d67a	PDF
4N0401 Abstract: IPB120N04S4-01 IPI120N04S4-01 IPP120N04S4-01 PG-TO263-3-2 Contextual Info: IPB120N04S4-01 IPI120N04S4-01, IPP120N04S4-01 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 1.5 mΩ ID 120 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow	Original	ipb120n04s4-01 ipi120n04s4-01 ipp120n04s4-01 pg-to263-3-2 +3pg-to262-3-1 pg-to220-3-1 4n0401	PDF
Contextual Info: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)	Original	ipb12cne8n ipi12cne8n ipd12cne8n ipp12cne8n +2pg-to263-3 pg-to252-3	PDF
4n0603 Abstract: 4N06 4N060 IPB120N06S4-03 IPI120N06S4-03 IPP120N06S4-03 PG-TO263-3-2 Contextual Info: IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 2.8 mΩ ID 120 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow	Original	ipb120n06s4-03 ipi120n06s4-03 ipp120n06s4-03 pg-to263-3-2 +5pg-to262-3-1 pg-to220-3-1 4n0603 4n06 4n060	PDF
12CN10L Abstract: D345 JESD22 PG-TO220-3 10069a IPP12CN10LG Contextual Info: IPS12CN10L G IPP12CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 12 mΩ ID 69 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	ips12cn10l ipp12cn10l pg-to220-3 pg-to251-3-11 +512cn10l d345 jesd22 10069a ipp12cn10lg	PDF
Contextual Info: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)	Original	ipb12cne8n ipi12cne8n ipd12cne8n ipp12cne8n +2pg-to263-3 12cne8n	PDF
12CN10L Abstract: D345 c25 diode to220 D83a Contextual Info: IPS12CN10L G IPP12CN10L G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • N-channel, logic level R DS on ,max 12 m: ID 69 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	ips12cn10l ipp12cn10l pg-to220-3 12cn10l +4pg-to251-3 d345 c25 diode to220 d83a	PDF
120N06N Abstract: 120N06 Contextual Info: IPB120N06N G OptiMOS Power-Transistor IPP120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 60 11.7 SMDversion ID 75 V mΩ A • 175 °C operating temperature	Original	ipb120n06n ipp120n06n p-to220-3-1 120n06n +2p-to263-3-2 120n06	PDF

3PN0402 Abstract: IPB120N04S3-02 ANPS071E IPI120N04S3-02 IPP120N04S3-02 PG-TO263-3-2 infineon smd package Contextual Info: IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 2.0 mΩ ID 120 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1	Original	ipb120n04s3-02 ipi120n04s3-02 ipp120n04s3-02 pg-to263-3-2 +5pg-to262-3-1 pg-to220-3-1 3pn0402 anps071e infineon smd package	PDF
120N06N Abstract: 120N06 IPP120N06N IPB120N06N ipp120n06ng IPP120N06N G Contextual Info: IPB120N06N G OptiMOS Power-Transistor IPP120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 60 11.7 SMDversion ID 75 V mΩ A • 175 °C operating temperature	Original	ipb120n06n ipp120n06n p-to220-3-1 120n06n +5p-to263-3-2 68-1n 120n06 ipp120n06ng ipp120n06n g	PDF
AE8 diode Abstract: 4a8 diode diode marking A43 DIODE S6 4aa BV99 aA88 IPB120N06N G Contextual Info: IPB120N06N G IPP120N06N G "%&$!"# Power-Transistor Product Summary Features . V 9G O >@50ABAE8 B 2 78=6 2 >=D4@B 4@A 0=3 AG=2 @42 B 858 2 0B 8>= R + >=< 0F + & O ' 2 70=4;4=70=2 4< 4=B =>@< 0;4D4; I &/ D4@A8 >= X" /- I9 6 O R >? 4@0B 8=6 B	Original	ipb120n06n ipp120n06n ae8 diode 4a8 diode +5diode marking a43 diode s6 4aa bv99 aa88 ipb120n06n g	PDF
4P04L03 Abstract: IPP120P04P4L-03 IPB120P04P4L-03 Contextual Info: IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 3.1 mW ID -120 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1	Original	ipb120p04p4l-03 ipi120p04p4l-03 ipp120p04p4l-03 pg-to263-3-2 +3pg-to262-3-1 pg-to220-3-1 4p04l03	PDF
infineon marking TO-252 Abstract: IEC61249-2-21 IPD12CNE8N IPP12CNE8N PG-TO220-3 12CNE8N Contextual Info: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)	Original	ipb12cne8n ipi12cne8n ipd12cne8n ipp12cne8n +5iec61249-2-21 pg-to263-3 infineon marking to-252 pg-to220-3 12cne8n	PDF
12CN10N Abstract: 12CN10 diode d335 d67a IPP12CN10N D-335 IPD12CN10NG IPB12CN10N G Contextual Info: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)	Original	ipb12cn10n ipi12cn10n ipd12cn10n ipp12cn10n +8pg-to263-3 12cn10n 12cn10 diode d335 d67a d-335 ipd12cn10ng ipb12cn10n g	PDF
12CN10N Contextual Info: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features V DS 100 V • N-channel, normal level R DS on ,max (TO252) 12.4 m: • Excellent gate charge x R DS(on) product (FOM) ID 67 A • Very low on-resistance R DS(on)	Original	ipb12cn10n ipi12cn10n ipd12cn10n ipp12cn10n +2pg-to263-3 12cn10n	PDF
4n0602 Abstract: 4N060 marking 206a IPB120N06S4-02 IPP120N06S4-02 SMD BR 32 IPI120N06S4-02 PG-TO263-3-2 Contextual Info: IPB120N06S4-02 IPI120N06S4-02, IPP120N06S4-02 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 2.4 mΩ ID 120 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow	Original	ipb120n06s4-02 ipi120n06s4-02 ipp120n06s4-02 pg-to263-3-2 +6pg-to262-3-1 pg-to220-3-1 4n0602 4n060 marking 206a smd br 32	PDF
4N0402 Abstract: IPB120N04S4-02 IPP120N04S4-02 IPI120N04S4-02 PG-TO263-3-2 Contextual Info: IPB120N04S4-02 IPI120N04S4-02, IPP120N04S4-02 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 1.8 mΩ ID 120 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow	Original	ipb120n04s4-02 ipi120n04s4-02 ipp120n04s4-02 pg-to263-3-2 +3pg-to262-3-1 pg-to220-3-1 4n0402	PDF
126N10N Abstract: 123N10N IEC61249-2-21 IPI126N10N3 PG-TO220-3 Contextual Info: IPP126N10N3 G IPB123N10N3 G OptiMOSTM3 Power-Transistor IPI126N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 12.3 mΩ ID 58 A • Very low on-resistance R DS(on)	Original	ipp126n10n3 ipb123n10n3 ipi126n10n3 o-263 +5iec61249-2-21 pg-to220-3 pg-to263-3 126n10n 123n10n	PDF

IPP12 Search Results

IPP12 Datasheets (41)

IPP12 Price and Stock

Infineon Technologies AG IPP126N10N3GXKSA1

Infineon Technologies AG IPP12CN10LGXKSA1

Infineon Technologies AG IPP120N20NFDAKSA1

Infineon Technologies AG IPP120N08S4-03

Infineon Technologies AG IPP120N08S403AKSA1

IPP12 Datasheets Context Search

120N06N

IPB120N06N

12CN10N

12CN10N

4N06H1

12CN10N

12CN10N

4N0401

4n0603

12CN10L

12CN10L

120N06N

3PN0402

120N06N

AE8 diode

4P04L03

infineon marking TO-252

12CN10N

12CN10N

4n0602

4N0402

126N10N