4N0402
Abstract: a3180 c9025 IPD90N04S4-02 TH-43
Contextual Info: IPD90N04S4-02 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 2.4 mΩ ID 90 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)
|
Original
|
ipd90n04s4-02pg-to252-3-3134n0402a3180+2c9025th-43
|
PDF
|
4N0402
Abstract: 4n0403 4N0402D IPB100N04S4 IPI100N04S4-03D 4N0403D IPB100N04S4-02 smd diode 104 IPP100N04S4-03D
Contextual Info: IPB100N04S4-02D IPI100N04S4-03D, IPP100N04S4-03D OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 2.2 mW ID 100 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow
|
Original
|
ipb100n04s4-02dipi100n04s4-03dipp100n04s4-03dpg-to262-3-1+9pg-to263-3-2pg-to220-3-14n04024n04034n0402dipb100n04s44n0403dipb100n04s4-02smd diode 104
|
PDF
|
IPB160N04S4-02D
Abstract: 4N0402D MJ10050 D160A 4N0402 73 marking
Contextual Info: IPB160N04S4-02D OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 1.9 mW ID 160 A Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (ELV compliant 100% lead free)
|
Original
|
ipb160n04s4-02dpg-to263-7-34n0402dmj10050+3d160a4n040273 marking
|
PDF
|
4N0402
Abstract: IPB120N04S4-02 IPP120N04S4-02 IPI120N04S4-02 PG-TO263-3-2
Contextual Info: IPB120N04S4-02 IPI120N04S4-02, IPP120N04S4-02 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 1.8 mΩ ID 120 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow
|
Original
|
ipb120n04s4-02ipi120n04s4-02ipp120n04s4-02pg-to263-3-2+3pg-to262-3-1pg-to220-3-14n0402
|
PDF
|
IPD100N04S4-02
Abstract: 4N0402 DSS 1630 marking 206a 175C D441000 ipd100n
Contextual Info: IPD100N04S4-02 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 2.0 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)
|
Original
|
ipd100n04s4-02pg-to252-3-3134n0402dss 1630+4marking 206a175cd441000ipd100n
|
PDF
|
4N0402
Abstract: IPB90N04S4-02 IPP90N04S4-02 PG-TO263-3-2 D-90A ipi90n04s4-02 d90a
Contextual Info: IPB90N04S4-02 IPI90N04S4-02, IPP90N04S4-02 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 2.1 mΩ ID 90 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow
|
Original
|
ipb90n04s4-02ipi90n04s4-02ipp90n04s4-02pg-to263-3-2+5pg-to262-3-1pg-to220-3-14n0402d-90ad90a
|
PDF
|