4N0402
Abstract: 4n0403 4N0402D IPB100N04S4 IPI100N04S4-03D 4N0403D IPB100N04S4-02 smd diode 104 IPP100N04S4-03D
Contextual Info: IPB100N04S4-02D IPI100N04S4-03D, IPP100N04S4-03D OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 2.2 mW ID 100 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow
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ipb100n04s4-02dipi100n04s4-03dipp100n04s4-03dpg-to262-3-1+9pg-to263-3-2pg-to220-3-14n04024n04034n0402dipb100n04s44n0403dipb100n04s4-02smd diode 104
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4N0403
Abstract: IPD90N04S4-03 65V-5 IPD90N04S4
Contextual Info: IPD90N04S4-03 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 3.2 mΩ ID 90 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)
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ipd90n04s4-03pg-to252-3-3134n040365v-5+1ipd90n04s4
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4n0403
Abstract: IPP80N04S4-03 IPB80N04S4-03 IPI80N04S4-03 PG-TO263-3-2 smd marking 5260
Contextual Info: IPB80N04S4-03 IPI80N04S4-03, IPP80N04S4-03 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 3.3 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow
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ipb80n04s4-03ipi80n04s4-03ipp80n04s4-03pg-to263-3-2+4pg-to262-3-1pg-to220-3-14n0403smd marking 5260
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