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Infineon Technologies AG


Infineon Technologies AG IPP12CN10LGXKSA1 MOSFET N-Channel 100V 69A (Tc) TO-220-3 Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	IPP12CN10LGXKSA1		83,740		1	1 - 10 - 100 $0.88 1000 $0.73 10000 $0.65	Buy Now
Infineon Technologies AG IPP12CN10LGHKSA1 MOSFET N-Channel 100V 69A (Tc) TO-220-3 T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	IPP12CN10LGHKSA1		380		1	1 - 10 - 100 $0.75 1000 $0.62 10000 $0.55	Buy Now
Infineon Technologies AG IPS12CN10LG Power Field-Effect Transistor, 69A I(D), 100V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	IPS12CN10LG		43		1	1 - 10 - 100 $1.07 1000 $0.89 10000 $0.79	Buy Now

12CN10L Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
12CN10L Abstract: D345 JESD22 PG-TO220-3 10069a IPP12CN10LG Contextual Info: 12CN10L G 12CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 12 mΩ ID 69 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	ips12cn10l ipp12cn10l pg-to220-3 pg-to251-3-11 +512cn10l d345 jesd22 10069a ipp12cn10lg	PDF
12CN10L Abstract: D345 c25 diode to220 D83a Contextual Info: 12CN10L G 12CN10L G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • N-channel, logic level R DS on ,max 12 m: ID 69 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	ips12cn10l ipp12cn10l pg-to220-3 12cn10l +4pg-to251-3 d345 c25 diode to220 d83a	PDF
PG-TO251-3-1 Abstract: 12CN10L Contextual Info: 12CN10L G 12CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 12 mW ID 69 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	ips12cn10l ipp12cn10l pg-to220-3 12cn10l +2pg-to251-3-11 pg-to251-3-1	PDF
Contextual Info: 12CN10L G 12CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) VDS 100 V RDS(on),max 12 mW ID 69 A • 175 °C operating temperature	Original	ips12cn10l ipp12cn10l pg-to220-3 pg-to251-3-11 +112cn10l	PDF