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    12CN10N Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPD12CN10NGATMA1

    Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IPD12CN10NGATMA1 1,445 1
    • 1 $1.87
    • 10 $1.40
    • 100 $0.97
    • 1000 $0.92
    • 10000 $0.92
    		Buy Now
    Rochester Electronics IPD12CN10NGATMA1 7,500 1
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    Infineon Technologies AG IPD12CN10NGBUMA1

    Power Field-Effect Transistor, 67A I(D), 100V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian IPD12CN10NGBUMA1 5,950
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    12CN10N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    12CN10N

    Abstract: IPI12CN10N IPP12CN10N PG-TO220-3 GS250 IPD12CN10
    Contextual Info: OptiMOS 2 Power-Transistor 12CN10N G 12CN10N G 12CN10N G 12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)


    Original     		ipb12cn10nipi12cn10nipd12cn10nipp12cn10n+6pg-to263-3pg-to252-312cn10npg-to220-3gs250ipd12cn10 PDF

    12CN10N

    Contextual Info: 12CN10N G 12CN10N G 12CN10N G 12CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max (TO252) 12.4 mW ID • Very low on-resistance R DS(on)


    Original     		ipb12cn10nipd12cn10nipi12cn10nipp12cn10n+3iec61249-2-21pg-to263-312cn10n PDF

    12CN10N

    Abstract: IPI12CN10N IPP12CN10N PG-TO220-3 diode d335 12CN10
    Contextual Info: OptiMOS 2 Power-Transistor 12CN10N G 12CN10N G 12CN10N G 12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)


    Original     		ipb12cn10nipi12cn10nipd12cn10nipp12cn10n+6pg-to263-3pg-to252-312cn10npg-to220-3diode d33512cn10 PDF

    12CN10N

    Abstract: IPP12CN10N IPI12CN10N PG-TO220-3 d67a
    Contextual Info: 12CN10N G 12CN10N G 12CN10N G 12CN10N G OptiMOS 2 Power-Transistor Features Product Summary • N-channel, normal level V DS 100 V R DS on ,max (TO252) 12.4 mΩ • Excellent gate charge x R DS(on) product (FOM) ID • Very low on-resistance R DS(on)


    Original     		ipb12cn10nipd12cn10nipi12cn10nipp12cn10n+5pg-to263-3pg-to252-312cn10npg-to220-3d67a PDF

    12CN10N

    Abstract: 12CN10 diode d335 d67a IPP12CN10N D-335 IPD12CN10NG IPB12CN10N G
    Contextual Info: OptiMOS 2 Power-Transistor 12CN10N G 12CN10N G 12CN10N G 12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)


    Original     		ipb12cn10nipi12cn10nipd12cn10nipp12cn10n+8pg-to263-312cn10n12cn10diode d335d67ad-335ipd12cn10ngipb12cn10n g PDF

    12CN10N

    Contextual Info: OptiMOS 2 Power-Transistor 12CN10N G 12CN10N G 12CN10N G 12CN10N G Product Summary Features V DS 100 V • N-channel, normal level R DS on ,max (TO252) 12.4 m: • Excellent gate charge x R DS(on) product (FOM) ID 67 A • Very low on-resistance R DS(on)


    Original     		ipb12cn10nipi12cn10nipd12cn10nipp12cn10n+2pg-to263-312cn10n PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		b192-h6780-g10-x-7600sp000012954sp000013610sp000017969+13sp000014627sp000018085sp000018086pef 24628psb 21493siemens pmb 661047n60c3psb 21553pmb7725pef 22628pmb6610psb 50505pmb 6819 PDF

    12CN10N

    Abstract: IPP12CN10N IEC61249-2-21 IPI12CN10N PG-TO220-3 J-STD-20
    Contextual Info: OptiMOS 2 Power-Transistor 12CN10N G 12CN10N G 12CN10N G 12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)


    Original     		ipb12cn10nipi12cn10nipd12cn10nipp12cn10n+5iec61249-2-21pg-to263-312cn10npg-to220-3j-std-20 PDF