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    IPS12CN10L Search Results

    IPS12CN10L Datasheets (2)

    Infineon Technologies
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IPS12CN10L G
    Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO251-3; Package: IPAK SL (TO-251 SL); VDS (max): 100.0 V; RDS (on) (max) (@10V): 12.0 mOhm; RDS (on) (max) (@4.5V): 15.8 mOhm; ID (max): 69.0 A; Original PDF 423.9KB 10
    IPS12CN10LGBKMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 69A TO251-3-11 Original PDF 553.96KB
    SF Impression Pixel

    IPS12CN10L Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPS12CN10LG

    Power Field-Effect Transistor, 69A I(D), 100V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IPS12CN10LG 43 1
    • 1 -
    • 10 -
    • 100 $1.07
    • 1000 $0.89
    • 10000 $0.79
    Buy Now

    Infineon Technologies AG IPS12CN10LGBKMA1

    Power Field-Effect Transistor, 69A I(D), 100V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian IPS12CN10LGBKMA1 10,557
    • 1 -
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    • 100 -
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    • 10000 -
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    IPS12CN10L Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    12CN10L

    Abstract: D345 JESD22 PG-TO220-3 10069a IPP12CN10LG
    Contextual Info: IPS12CN10L G IPP12CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 12 mΩ ID 69 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original
    ips12cn10lipp12cn10lpg-to220-3pg-to251-3-11+512cn10ld345jesd2210069aipp12cn10lg PDF

    12CN10L

    Abstract: D345 c25 diode to220 D83a
    Contextual Info: IPS12CN10L G IPP12CN10L G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • N-channel, logic level R DS on ,max 12 m: ID 69 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original
    ips12cn10lipp12cn10lpg-to220-312cn10l+4pg-to251-3d345c25 diode to220d83a PDF

    PG-TO251-3-1

    Abstract: 12CN10L
    Contextual Info: IPS12CN10L G IPP12CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 12 mW ID 69 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original
    ips12cn10lipp12cn10lpg-to220-312cn10l+2pg-to251-3-11pg-to251-3-1 PDF

    Contextual Info: IPS12CN10L G IPP12CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) VDS 100 V RDS(on),max 12 mW ID 69 A • 175 °C operating temperature


    Original
    ips12cn10lipp12cn10lpg-to220-3pg-to251-3-11+112cn10l PDF

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Contextual Info: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original
    igbt welding machine schemeikw40n120h3aircon l1smd diode schottky code marking sj+6transistor marking code 12w sot-2324v application with ice3ar0680jzinduction cooker fault findingipw65r041igw40n60h3spw55n80c3 PDF

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Contextual Info: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


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    lead519b152-h9345-g2-x-7600px3544px7510+8px3560ice2as01 equivalentpx3540primarion px3540ice3br0665jprimarion px3560ice3br4765ice3br1765j PDF

    ICE3B0365J

    Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
    Contextual Info: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)


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    spp21n50c3spa21n50c3spi21n50c3spp16n50c3+16spa16n50c3spi16n50c3spw21n50c3spp12n50c3spa12n50c3spi12n50c3ice3b0365jice3br4765jtda16888ice2a765p2ice2pcs01gice1pcs02gice2b0565ice1pcs02ice2pcs02ipi60r099cp PDF