IPB1 Search Results
IPB1 Datasheets (147)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| IPB100N04S2-04 | 
 
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OptiMOS Power-Transistor | Original | 154.11KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N04S204ATMA1 | 
 
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 | Original | 150.1KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N04S204ATMA4 | 
 
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 | Original | 155.12KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N04S2L-03 | 
 
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OptiMOS Power-Transistor | Original | 154.36KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N04S2L03ATMA1 | 
 
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 | Original | 150.35KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N04S2L03ATMA2 | 
 
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 | Original | 155.43KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N04S3-03 | 
 
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Single: N-Channel 40V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 40.0 V; RDS (on) (max) (@10V): 2.5 mOhm; ID (max): 100.0 A; RthJC (max): 0.7 K/W; | Original | 198.07KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N04S303ATMA1 | 
 
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3 | Original | 200.29KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N04S4-H2 | 
 
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 100A TO263-3-2 | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N04S4H2ATMA1 | 
 
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3-2 | Original | 138.32KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N06S2-05 | 
 
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 4.7 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; | Original | 156.33KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N06S205ATMA1 | 
 
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3 | Original | 152.29KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N06S205ATMA4 | 
 
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3 | Original | 157.35KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N06S2L-05 | 
 
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 4.4 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; | Original | 156KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| IPB100N06S2L05ATMA1 | 
 
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3 | Original | 151.96KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N06S2L05ATMA2 | 
 
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3 | Original | 151.97KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N06S3-03 | 
 
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 3.0 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; | Original | 189.42KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N06S3-03 | 
 
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OptiMOS -T Power-Transistor | Original | 161.7KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N06S3-04 | 
 
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 4.1 mOhm; ID (max): 100.0 A; RthJC (max): 0.7 K/W; | Original | 198.66KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB100N06S3L-03 | 
 
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 2.7 mOhm; ID (max): 100.0 A; RthJC (max): 0.5 K/W; | Original | 193.45KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB1 Price and Stock
Infineon Technologies AG IPB107N20N3GATMA1MOSFET N-CH 200V 88A D2PAK | 
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Infineon Technologies AG IPB108N15N3GATMA1MOSFET N-CH 150V 83A D2PAK | 
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Infineon Technologies AG IPB100N12S305ATMA1MOSFET N-CH 120V 100A TO263-3 | 
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IPB1 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
PN04L03
Abstract: smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42 
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 Original  | 
IPB100N04S2L-03 IPP100N04S2L-03 PG-TO263-3-2 PG-TO220-3-1 SP0002-19065 PN04L03 PN04L03 smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42 | |
120N06N
Abstract: 120N06 IPB120N06N PG-TO220-3 ISS 99 diode ipp120n06ng 
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 Original  | 
IPB120N06N IPP120N06N P-TO220-3-1 P-TO263-3-2 120N06N 120N06N 120N06 PG-TO220-3 ISS 99 diode ipp120n06ng | |
16cn10n
Abstract: 16cn10 IPP16CN10N D53A PG-TO220-3 16CN1 
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 Original  | 
IPB16CN10N IPI16CN10N IPD16CN10N IPP16CN10N PG-TO263-3 PG-TO252-3 16cn10n 16cn10 D53A PG-TO220-3 16CN1 | |
B581CContextual Info: DATA SHEET_ BIPOLAR DIGITAL INTEGRATED CIRCUIT ¿xPB1508GV 3 GHz INPUT DIVIDE BY 2 PRESCALER IC FOR DBS TUNERS /¿PB1508GV is a 3.0 GHz input divide by 2 prescaler IC for DBS tuner applications. ¿¿PB1508GV can make VHF/UHF band PLL frequency synthesizer apply to DBS/ECS tuners. /iPB1508G V is a shrink package version of  | 
 OCR Scan  | 
uPB1508GV PB1508GV /iPB1508G PB584G B581C | |
IPB120N06N
Abstract: 120N06N IPP120N06N IEC61249-2-21 PG-TO220-3 SMD diode D94 
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 Original  | 
IPB120N06N IPP120N06N IEC61249-2-21 P-TO220-3-1 P-TO263-3-2 120N06N 120N06N IEC61249-2-21 PG-TO220-3 SMD diode D94 | |
14N03LA
Abstract: 14n03 14N03L GD 364 IPB14N03LA IPI14N03LA IPP14N03LA 
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 Original  | 
IPB14N03LA IPI14N03LA, IPP14N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Q67042-S4156 14N03LA 14N03LA 14n03 14N03L GD 364 IPB14N03LA IPI14N03LA IPP14N03LA | |
147N12NContextual Info: IPB144N12N3 G IPI147N12N3 G OptiMOSTM3 Power-Transistor IPP147N12N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max 14.7 mΩ ID 56 A • Very low on-resistance R DS(on) • 175 °C operating temperature  | 
 Original  | 
IPB144N12N3 IPI147N12N3 IPP147N12N3 PG-TO263-3 PG-TO262-3 PG-TO220-3 144N12N 147N12N | |
107n20n
Abstract: 110N20N IPB107N20N3 IPP110N20N3 G DSV80 D88 z IPI110N20N3 IPI110N20N3 G IEC61249-2-21 PG-TO220-3 
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 Original  | 
IPB107N20N3 IPP110N20N3 IPI110N20N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 107n20n 110N20N IPP110N20N3 G DSV80 D88 z IPI110N20N3 G IEC61249-2-21 PG-TO220-3 | |
12CN10N
Abstract: IPI12CN10N IPP12CN10N PG-TO220-3 GS250 IPD12CN10 
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 Original  | 
IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 PG-TO252-3 12CN10N PG-TO220-3 GS250 IPD12CN10 | |
4N06H1
Abstract: IPB180N06S4-H1 D180A PG-TO263-7-3 TO263-7 4N06 SMD Diode 
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 Original  | 
IPB180N06S4-H1 PG-TO263-7-3 4N06H1 4N06H1 IPB180N06S4-H1 D180A PG-TO263-7-3 TO263-7 4N06 SMD Diode | |
10n03l
Abstract: smd diode 36A 10N03 OPTIMOS ANPS071E IPB10N03L IPP10N03L IPB10N03L SMD 
  | 
 Original  | 
IPP10N03L IPB10N03L Q67042-S4040 10N03L Q67040-S4346 10n03l smd diode 36A 10N03 OPTIMOS ANPS071E IPB10N03L IPP10N03L IPB10N03L SMD | |
15n03l
Abstract: 15N03 IPB15N03L ANPS071E IPP15N03L F42A 
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 Original  | 
IPP15N03L IPB15N03L Q67042-S4039 15N03L Q67040-S4344 15n03l 15N03 IPB15N03L ANPS071E IPP15N03L F42A | |
3QN0402
Abstract: PG-TO263-7-3 IPB180N04S3-02 ipb180n04 
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 Original  | 
IPB180N04S3-02 PG-TO263-7-3 3QN0402 14300pF 3900pF 710pF 245nC 210nC 3QN0402 PG-TO263-7-3 IPB180N04S3-02 ipb180n04 | |
marking D78
Abstract: smd diode marking 78A 
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 Original  | 
IPB110N06L IPP110N06L PG-TO263-3-2 P-TO263-3-2 110N06L P-TO220-3-1 marking D78 smd diode marking 78A | |
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16cn10n
Abstract: 16cn10 IPB16CN10N 16CN1 
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 Original  | 
IPB16CN10N IPI16CN10N IPD16CN10N IPP16CN10N PG-TO263-3 16CN10N 16cn10n 16cn10 16CN1 | |
16CNE8N
Abstract: IPP16CNE8N 
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 Original  | 
IPB16CNE8N IPI16CNE8N IPD16CNE8N IPP16CNE8N PG-TO263-3 16CNE8N 16CNE8N | |
4N04H1
Abstract: IPB160N04S4-H1 PG-TO263-7-3 A6300 ipb160n 73 marking 
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 Original  | 
IPB160N04S4-H1 PG-TO263-7-3 4N04H1 4N04H1 IPB160N04S4-H1 PG-TO263-7-3 A6300 ipb160n 73 marking | |
12CN10NContextual Info: IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max (TO252) 12.4 mW ID • Very low on-resistance R DS(on)  | 
 Original  | 
IPB12CN10N IPD12CN10N IPI12CN10N IPP12CN10N IEC61249-2-21 PG-TO263-3 12CN10N | |
4N06H1
Abstract: IPP120N06S4-H1 marking H1 IPB120N06S4-H1 IPI120N06S4-H1 PG-TO263-3-2 
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 Original  | 
IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N06H1 IPI120N06S4-H1 4N06H1 IPP120N06S4-H1 marking H1 IPB120N06S4-H1 IPI120N06S4-H1 PG-TO263-3-2 | |
3PN0604
Abstract: TRANSISTOR SMD MARKING CODE 04 IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2 
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 Original  | 
IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 SP0001-02220 3PN0604 3PN0604 TRANSISTOR SMD MARKING CODE 04 IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2 | |
marking eb5
Abstract: diode marking eb5 IPP139N08N3 EB5 MARKING marking G9 i95B 
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 Original  | 
IPP139N08N3 IPI139N08N3 IPB136N08N3 65AE5 marking eb5 diode marking eb5 EB5 MARKING marking G9 i95B | |
IPP17N25S3-100Contextual Info: IPB17N25S3-100 IPP17N25S3-100 OptiMOS -T Power-Transistor Product Summary VDS 250 V RDS on ,max 100 mW ID 17 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature  | 
 Original  | 
IPB17N25S3-100 IPP17N25S3-100 PG-TO263-3-2 PG-TO220-3-1 3N25100 IPP17N25S3-100 | |
107n20nContextual Info: IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 200 V RDS(on),max (TO263) 10.7 mW ID • Very low on-resistance R DS(on) 88 A  | 
 Original  | 
IPB107N20N3 IPP110N20N3 IPI110N20N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 107n20n | |
marking 6d
Abstract: IPP147N12N 
  | 
 Original  | 
IPB144N12N3 IPI147N12N3 IPP147N12N3 marking 6d IPP147N12N | |