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IPB1 Datasheets (147)

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Infineon Technologies

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IPB100N04S2-04	Infineon Technologies	OptiMOS Power-Transistor	Original	PDF	154.11KB	8
IPB100N04S204ATMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3	Original	PDF	150.1KB
IPB100N04S204ATMA4	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3	Original	PDF	155.12KB
IPB100N04S2L-03	Infineon Technologies	OptiMOS Power-Transistor	Original	PDF	154.36KB	8
IPB100N04S2L03ATMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3	Original	PDF	150.35KB
IPB100N04S2L03ATMA2	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3	Original	PDF	155.43KB
IPB100N04S3-03	Infineon Technologies	Single: N-Channel 40V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; V_DS (max): 40.0 V; R_{DS (on)} (max) (@10V): 2.5 mOhm; I_D (max): 100.0 A; R_thJC (max): 0.7 K/W;	Original	PDF	198.07KB	9
IPB100N04S303ATMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3	Original	PDF	200.29KB
IPB100N04S4-H2	Infineon Technologies	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 100A TO263-3-2	Original	PDF		9
IPB100N04S4H2ATMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TO263-3-2	Original	PDF	138.32KB
IPB100N06S2-05	Infineon Technologies	Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; V_DS (max): 55.0 V; R_{DS (on)} (max) (@10V): 4.7 mOhm; I_D (max): 100.0 A; R_thJC (max): 0.5 K/W;	Original	PDF	156.33KB	8
IPB100N06S205ATMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3	Original	PDF	152.29KB
IPB100N06S205ATMA4	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3	Original	PDF	157.35KB
IPB100N06S2L-05	Infineon Technologies	Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; V_DS (max): 55.0 V; R_{DS (on)} (max) (@10V): 4.4 mOhm; I_D (max): 100.0 A; R_thJC (max): 0.5 K/W;	Original	PDF	156KB	8

IPB100N06S2L05ATMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3	Original	PDF	151.96KB
IPB100N06S2L05ATMA2	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 100A TO263-3	Original	PDF	151.97KB
IPB100N06S3-03	Infineon Technologies	Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; V_DS (max): 55.0 V; R_{DS (on)} (max) (@10V): 3.0 mOhm; I_D (max): 100.0 A; R_thJC (max): 0.5 K/W;	Original	PDF	189.42KB	9
IPB100N06S3-03	Infineon Technologies	OptiMOS -T Power-Transistor	Original	PDF	161.7KB	8
IPB100N06S3-04	Infineon Technologies	Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; V_DS (max): 55.0 V; R_{DS (on)} (max) (@10V): 4.1 mOhm; I_D (max): 100.0 A; R_thJC (max): 0.7 K/W;	Original	PDF	198.66KB	9
IPB100N06S3L-03	Infineon Technologies	Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; V_DS (max): 55.0 V; R_{DS (on)} (max) (@10V): 2.7 mOhm; I_D (max): 100.0 A; R_thJC (max): 0.5 K/W;	Original	PDF	193.45KB	9

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IPB1 Price and Stock

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Infineon Technologies AG


Infineon Technologies AG IPB180N10S4-02 Transistor: N-MOSFET; 100V; 180A; Idm: 720A; 300W; TO263-7
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IPB180N10S4-02		937		11	1 - 10 - 100 $4.35 1000 $4.32 10000 $4.32	Buy Now
Mouser Electronics	IPB180N10S4-02		1,926			1 $7.35 10 $4.81 100 $3.55 1000 $2.80 10000 $2.80	Buy Now
Infineon Technologies AG IPB180N04S4H0ATMA1 Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 180A; 250W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IPB180N04S4H0ATMA1		535		1	1 $3.95 10 $2.13 100 $1.79 1000 $1.51 10000 $1.51	Buy Now
Verical ()	IPB180N04S4H0ATMA1		1,056		218	1 - 10 - 100 - 1000 $1.54 10000 $1.45	Buy Now
	IPB180N04S4H0ATMA1		1,000		1,000	1 - 10 - 100 - 1000 $2.10 10000 $2.10	Buy Now
Arrow Electronics ()	IPB180N04S4H0ATMA1		2,000	12 Weeks	1,000	1 - 10 - 100 - 1000 $1.57 10000 $1.57	Buy Now
	IPB180N04S4H0ATMA1		1,000	12 Weeks	1,000	1 - 10 - 100 - 1000 $1.48 10000 $1.48	Buy Now
	IPB180N04S4H0ATMA1	Cut Strips	950	12 Weeks	1	1 $3.79 10 $3.79 100 $3.79 1000 $3.79 10000 $3.79	Buy Now
EBV Elektronik	IPB180N04S4H0ATMA1		1,000	13 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IPB100N12S305ATMA1 Transistor: N-MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IPB100N12S305ATMA1				1,000	1 - 10 - 100 - 1000 $2.70 10000 $2.70	Get Quote
Infineon Technologies AG IPB110P06LMATMA1 Transistor: P-MOSFET; unipolar
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IPB110P06LMATMA1				1,000	1 - 10 - 100 - 1000 $1.98 10000 $1.73	Get Quote
Mouser Electronics	IPB110P06LMATMA1		6,402			1 $5.54 10 $2.89 100 $2.63 1000 $2.20 10000 $2.20	Buy Now
Newark ()	IPB110P06LMATMA1	Cut Tape	1,146		1	1 $6.21 10 $6.21 100 $3.30 1000 $2.96 10000 $2.84	Buy Now
	IPB110P06LMATMA1	Tape & Reel	1,146		100	1 - 10 - 100 $3.30 1000 $2.96 10000 $2.84	Buy Now
EBV Elektronik	IPB110P06LMATMA1			9 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG IPB160N04S2L03ATMA2 Transistor: N-MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IPB160N04S2L03ATMA2				1,000	1 - 10 - 100 - 1000 $1.80 10000 $1.80	Get Quote
Avnet Americas	IPB160N04S2L03ATMA2	Tape & Reel		12 Weeks	1,000	1 - 10 - 100 - 1000 $1.50 10000 $1.43	Buy Now
Newark	IPB160N04S2L03ATMA2	Cut Tape	1,000		1	1 $2.44 10 $2.44 100 $2.44 1000 $2.44 10000 $2.44	Buy Now
Rochester Electronics	IPB160N04S2L03ATMA2		160		1	1 - 10 - 100 $1.57 1000 $1.40 10000 $1.32	Buy Now

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IPB1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
PN04L03 Abstract: smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42 Contextual Info: IPB100N04S2L-03 IPP100N04S2L-03 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.0 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	ipb100n04s2l-03 ipp100n04s2l-03 pg-to263-3-2 pg-to220-3-1 +11sp0002-19065 pn04l03 smd diode code gs application note anps071e anps071e marking code r smd diode smd diode marking 77 smd marking code smd marking code 102 smd tr marking code g11 transistor smd marking code 42	PDF
120N06N Abstract: 120N06 IPB120N06N PG-TO220-3 ISS 99 diode ipp120n06ng Contextual Info: IPB120N06N G OptiMOS Power-Transistor IPP120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 60 11.7 SMDversion ID 75 V mΩ A • 175 °C operating temperature	Original	ipb120n06n ipp120n06n p-to220-3-1 p-to263-3-2 +5120n06n 120n06 pg-to220-3 iss 99 diode ipp120n06ng	PDF
16cn10n Abstract: 16cn10 IPP16CN10N D53A PG-TO220-3 16CN1 Contextual Info: OptiMOS 2 Power-Transistor IPB16CN10N G IPD16CN10N G IPI16CN10N G IPP16CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 16 mΩ ID 53 A • Very low on-resistance R DS(on)	Original	ipb16cn10n ipi16cn10n ipd16cn10n ipp16cn10n +7pg-to263-3 pg-to252-3 16cn10n 16cn10 d53a pg-to220-3 16cn1	PDF
B581C Contextual Info: DATA SHEET_ BIPOLAR DIGITAL INTEGRATED CIRCUIT ¿xPB1508GV 3 GHz INPUT DIVIDE BY 2 PRESCALER IC FOR DBS TUNERS /¿PB1508GV is a 3.0 GHz input divide by 2 prescaler IC for DBS tuner applications. ¿¿PB1508GV can make VHF/UHF band PLL frequency synthesizer apply to DBS/ECS tuners. /iPB1508G V is a shrink package version of	OCR Scan	upb1508gv pb1508gv /ipb1508g pb584g +1b581c	PDF
IPB120N06N Abstract: 120N06N IPP120N06N IEC61249-2-21 PG-TO220-3 SMD diode D94 Contextual Info: IPB120N06N G OptiMOS Power-Transistor IPP120N06N G Product Summary Features 60 V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 11.7 SMDversion 75 ID V mΩ A • 175 °C operating temperature	Original	ipb120n06n ipp120n06n iec61249-2-21 p-to220-3-1 +4p-to263-3-2 120n06n pg-to220-3 smd diode d94	PDF
14N03LA Abstract: 14n03 14N03L GD 364 IPB14N03LA IPI14N03LA IPP14N03LA Contextual Info: IPB14N03LA IPI14N03LA, IPP14N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 13.6 mΩ ID 30 A • Logic level • Excellent gate charge x R DS(on) product (FOM)	Original	ipb14n03la ipi14n03la ipp14n03la p-to263-3-2 +7p-to262-3-1 p-to220-3-1 q67042-s4156 14n03la 14n03 14n03l gd 364	PDF
147N12N Contextual Info: IPB144N12N3 G IPI147N12N3 G OptiMOSTM3 Power-Transistor IPP147N12N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max 14.7 mΩ ID 56 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	ipb144n12n3 ipi147n12n3 ipp147n12n3 pg-to263-3 +4pg-to262-3 pg-to220-3 144n12n 147n12n	PDF
107n20n Abstract: 110N20N IPB107N20N3 IPP110N20N3 G DSV80 D88 z IPI110N20N3 IPI110N20N3 G IEC61249-2-21 PG-TO220-3 Contextual Info: IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 200 V R DS(on),max (TO263) 10.7 mΩ ID 88 A • Very low on-resistance R DS(on)	Original	ipb107n20n3 ipp110n20n3 ipi110n20n3 iec61249-2-21 +9pg-to263-3 pg-to220-3 pg-to262-3 107n20n 110n20n ipp110n20n3 g dsv80 d88 z ipi110n20n3 g	PDF
12CN10N Abstract: IPI12CN10N IPP12CN10N PG-TO220-3 GS250 IPD12CN10 Contextual Info: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)	Original	ipb12cn10n ipi12cn10n ipd12cn10n ipp12cn10n +6pg-to263-3 pg-to252-3 12cn10n pg-to220-3 gs250 ipd12cn10	PDF
4N06H1 Abstract: IPB180N06S4-H1 D180A PG-TO263-7-3 TO263-7 4N06 SMD Diode Contextual Info: IPB180N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 1.7 mΩ ID 180 A Features PG-TO263-7-3 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)	Original	ipb180n06s4-h1 pg-to263-7-3 4n06h1 d180a +3to263-7 4n06 smd diode	PDF
10n03l Abstract: smd diode 36A 10N03 OPTIMOS ANPS071E IPB10N03L IPP10N03L IPB10N03L SMD Contextual Info: IPP10N03L IPB10N03L OptiMOS Buck converter series Product Summary Feature • N-Channel VDS 30 V • Logic Level RDS on max. SMD version 8.9 mΩ • Low On-Resistance RDS(on) ID 73 A • Excellent Gate Charge x RDS(on) product (FOM) P- TO263 -3-2 P- TO220 -3-1	Original	ipp10n03l ipb10n03l q67042-s4040 10n03l +6q67040-s4346 smd diode 36a 10n03 optimos anps071e ipb10n03l smd	PDF
15n03l Abstract: 15N03 IPB15N03L ANPS071E IPP15N03L F42A Contextual Info: IPP15N03L IPB15N03L OptiMOS Buck converter series Product Summary Feature 30 • N-Channel VDS • Logic Level RDS on max. SMD version • Low On-Resistance RDS(on) ID • Excellent Gate Charge x RDS(on) product (FOM) P- TO263 -3-2 V 12.6 mΩ 42 A P- TO220 -3-1	Original	ipp15n03l ipb15n03l q67042-s4039 15n03l +4q67040-s4344 15n03 anps071e f42a	PDF
3QN0402 Abstract: PG-TO263-7-3 IPB180N04S3-02 ipb180n04 Contextual Info: Preliminary Data Sheet OptiMOS -T Power-Transistor IPB180N04S3-02 Product Summary V DS 40 V R DS on 1.6 mΩ ID 180 A Features • N-channel - Enhancement mode PG-TO263-7-3 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	ipb180n04s3-02 pg-to263-7-3 3qn0402 14300pf +53900pf 710pf 245nc 210nc ipb180n04	PDF
marking D78 Abstract: smd diode marking 78A Contextual Info: IPB110N06L G OptiMOS Power-Transistor IPP110N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMD version ID 60 V 11 mΩ 78 A • 175 °C operating temperature	Original	ipb110n06l ipp110n06l pg-to263-3-2 p-to263-3-2 +4110n06l p-to220-3-1 marking d78 smd diode marking 78a	PDF

16cn10n Abstract: 16cn10 IPB16CN10N 16CN1 Contextual Info: OptiMOS 2 Power-Transistor IPB16CN10N G IPD16CN10N G IPI16CN10N G IPP16CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 16 mΩ ID 53 A • Very low on-resistance R DS(on)	Original	ipb16cn10n ipi16cn10n ipd16cn10n ipp16cn10n +4pg-to263-3 16cn10n 16cn10 16cn1	PDF
16CNE8N Abstract: IPP16CNE8N Contextual Info: OptiMOS 2 Power-Transistor IPB16CNE8N G IPD16CNE8N G IPI16CNE8N G IPP16CNE8N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 16 mΩ ID 53 A • Very low on-resistance R DS(on)	Original	ipb16cne8n ipi16cne8n ipd16cne8n ipp16cne8n +2pg-to263-3 16cne8n	PDF
4N04H1 Abstract: IPB160N04S4-H1 PG-TO263-7-3 A6300 ipb160n 73 marking Contextual Info: IPB160N04S4-H1 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on 1.6 mW ID 160 A Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)	Original	ipb160n04s4-h1 pg-to263-7-3 4n04h1 a6300 +2ipb160n 73 marking	PDF
12CN10N Contextual Info: IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max (TO252) 12.4 mW ID • Very low on-resistance R DS(on)	Original	ipb12cn10n ipd12cn10n ipi12cn10n ipp12cn10n +3iec61249-2-21 pg-to263-3 12cn10n	PDF
4N06H1 Abstract: IPP120N06S4-H1 marking H1 IPB120N06S4-H1 IPI120N06S4-H1 PG-TO263-3-2 Contextual Info: IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 2.1 mΩ ID 120 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow	Original	ipb120n06s4-h1 ipi120n06s4-h1 ipp120n06s4-h1 pg-to263-3-2 +4pg-to262-3-1 pg-to220-3-1 4n06h1 marking h1	PDF
3PN0604 Abstract: TRANSISTOR SMD MARKING CODE 04 IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2 Contextual Info: IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 4.1 mΩ ID 100 A • MSL1 up to 260°C peak reflow	Original	ipb100n06s3-04 ipi100n06s3-04 ipp100n06s3-04 pg-to263-3-2 +5pg-to262-3-1 pg-to220-3-1 sp0001-02220 3pn0604 transistor smd marking code 04	PDF
marking eb5 Abstract: diode marking eb5 IPP139N08N3 EB5 MARKING marking G9 i95B Contextual Info: IPP139N08N3 G IPI139N08N3 G IPB136N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features 0 V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 R , ? >=1H, & Q ( @D9=9J54 D53 8>? <? 7I 6? B 3 ? >F5BD5BC J +&. Y" ,- I9 6 Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( &	Original	ipp139n08n3 ipi139n08n3 ipb136n08n3 65ae5 +5marking eb5 diode marking eb5 eb5 marking marking g9 i95b	PDF
IPP17N25S3-100 Contextual Info: IPB17N25S3-100 IPP17N25S3-100 OptiMOS -T Power-Transistor Product Summary VDS 250 V RDS on ,max 100 mW ID 17 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	ipb17n25s3-100 ipp17n25s3-100 pg-to263-3-2 pg-to220-3-1 +13n25100	PDF
107n20n Contextual Info: IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 200 V RDS(on),max (TO263) 10.7 mW ID • Very low on-resistance R DS(on) 88 A	Original	ipb107n20n3 ipp110n20n3 ipi110n20n3 iec61249-2-21 +4pg-to263-3 pg-to220-3 pg-to262-3 107n20n	PDF
marking 6d Abstract: IPP147N12N Contextual Info: IPB144N12N3 G IPI147N12N3 G IPP147N12N3 G "%&$!"# 3 Power-Transistor Product Summary Features R 492 ?6= ?@ C>2 =6G6= R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E! ' V ;I )*( K R - @ ?>2 I ),&/ Z" -. I; 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#	Original	ipb144n12n3 ipi147n12n3 ipp147n12n3 marking 6d +1ipp147n12n	PDF

IPB1 Search Results

IPB1 Datasheets (147)

IPB1 Price and Stock

Infineon Technologies AG IPB180N10S4-02

Infineon Technologies AG IPB180N04S4H0ATMA1

Infineon Technologies AG IPB100N12S305ATMA1

Infineon Technologies AG IPB110P06LMATMA1

Infineon Technologies AG IPB160N04S2L03ATMA2

IPB1 Datasheets Context Search

PN04L03

120N06N

16cn10n

B581C

IPB120N06N

14N03LA

147N12N

107n20n

12CN10N

4N06H1

10n03l

15n03l

3QN0402

marking D78

16cn10n

16CNE8N

4N04H1

12CN10N

4N06H1

3PN0604

marking eb5

IPP17N25S3-100

107n20n

marking 6d