IC MARKING 2B Search Results

Contextual Info: EIN UNTERNEHMEN VON Keramik-Kondensatoren fur die Unterhaltungs-Elektronik Ceramic Capacitors for entertainment electronics Roederstein Keram ische Im puls-Scheibenkondensatonen, Klasse 2 C eram ic pulse disc capacitors, class 2 Ausfuhrung / Design: Kennzeichnung / Marking:

hall effect transistor 502a

Abstract: SENSOR HALL 505A SENSOR HALL 504A 502a hall sensor power supply ps 3003 hall 502a Y0401 Transistor 115e HAL506 hal556
Contextual Info: HAL1 15 Hall Effect Sensor IC Edition May 7, 1997 6251-414-1 OS INTERMETALL HAL115 Marking Code Hall Effect Sensor IC in CMOS technology Type Temperature Range Features: - operates from 4.3 to 24 V supply voltage with reverse voltage protection - operates with magnetic fields from DC to 20 kHz

analog device 5A marking

Abstract: transistor 6c x part marking lvb 74 standard TTL USB3.0 to SATA3 Bridge 49FCT 74 series family Pericom Fast CMOS C code for crossbar switch 85C49
Contextual Info: Ordering Information CLOCK IC PI 49FCT/6C XX XXXXX XX X X X Blank = Tube; X = Tape & Reel PERICOM IC PACKAGING Pericom offers a wide range of advanced packaging solutions to fit any application including TSSOP, QFN, DFN, LFBGA, and SOTiny . Use these marking guides to order the correct device for your

D880 voltage regulator

Abstract: B0244C TIP28C transistor d880 VOLTAGE REGULATOR D880 D880 TRANSISTOR TIP28 A992 transistor E13009 ksd-180
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition Vet: (V) Ic (A) hpe Condition Vce(sat), VeE(sat)(v) Condition (V) (mA) MAX KST56(2G) KST55(2H) 80 0.5

TMPT404

Contextual Info: ALLEGRO MICROSYSTEMS 8514019 SPRAGUE. INC =53 D • G5DM33Ö 0D03b07 b ■ A L GR SE M IC O N DS /I C S SMALL-OUTLINE BIPOLAR TRANSISTORS PNP Transistors ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO Device Type Marking BCW29 BCW30 BCW61A BCW61B BCW61C BCW61D

Contextual Info: PRELIMINARY MT58LC128K16C6 128K X 16 SYNCBURST SRAM l^ ic n o N 128K X 16 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST COUNTER FEATURES • • • • • • • • OPTIONS MARKING • Timing 12ns clock cycle 83 MHz 13ns clock cycle (75 MHz)

Contextual Info: MICRON S E M I C O N D U C T O R INC i h3E D • blllSMT G G Q ñ 2 n BS7 H M R N MT16D88C51232 512K x 32,1 MEG x 16 IC DRAM CARD I 2 MEGABYTES IC DRAM CARD 512K x 32, 1 MEG x 16 FEATURES PIN ASSIGNMENT End View 88-Pin Card (DF-1) OPTIONS MARKING • Timing

Contextual Info: S O T- 2 3 B I P O L A R T R A N S I S T O R S NPN TRANSISTORS • New Product Marking VCEO hFE @VCE/IC VCEsat @IC/IB ICES @VCE Type Code V V/mA max.V mA/mA max.nA V BC817-16 6A 45 100-250 1/100 0.7 500/50 100 45 BC817-25 6B 45 160-400 1/100 0.7 500/50 100

MT52C9022

Contextual Info: |U |IC=RO N MT52C9022 2K x 9 FIFO FIFO 2K x 9 FIFO WITH PROGRAMMABLE FLAGS FEATURES • • • • • • • • OPTIONS • Timing 15ns access 20ns access 25ns access 35ns access PIN ASSIGNMENT Top View 28-Pin DIP (SA-4) ERAEF XÔ/HF/FE MARKING 09 [

AS179-92

Abstract: 13MHZ NDK MC13180 MC13180FC MC71000 MC9328MX1 QFN-48 transmitter lut gfsk
Contextual Info: Technical Data MC13180/D Rev. 0, 11/2002 MC13180 2.4 GHz Low Power Wireless Transceiver IC for Bluetooth Applications Package Information Plastic Package Case 1314 QFN-48 Ordering Information Device Marking Package MC13180FC MC13180FC QFN-48 The MC13180 2.4 GHz Low Power Wireless Transceiver for Bluetooth™ is a part of the

PC1318

Abstract: BIPOLAR MOTOROLA 2N J1 TRANSISTOR DIODE SOT-23 PACKAGE PC13180FC 13MHZ NDK MARKING 12p SOT-23 RF loop antenna 13Mhz transistor marking code 7E SOT-23 MC13180 MC71000
Contextual Info: Product Preview MC13180PP/D Rev. 2, 08/2002 MC13180 2.4 GHz Low Power Wireless Transceiver IC for Bluetooth Applications Package Information Plastic Package Case 1314 QFN-48 Ordering Information Device Marking Package PC13180FC PC13180FC QFN-48 The MC13180 2.4 GHz Low Power Wireless Transceiver for Bluetooth™ is a part of the

MT5C1005-25

Abstract: WP1Z
Contextual Info: M IC R O N I 256K r.'ICONDUCTOR INC SRAM MT5C1005 X 4 SRAM 256Kx 4 SRAM FEATURES OPTIONS MARKING • Timing 12ns access 15ns access 20ns access 25ns access -12 -15 -20 -25 • Packages Plastic DIP 400 mil Plastic SOJ (400 mil) None DJ • 2V data retention (optional)

T2D19

Contextual Info: M IC R O N MT2D18 1 MEG X 8 DRAM MODULE I 1 MEG X 8 DRAM DRAM MODULE FAST PAGE MODE FEATURES OPTIONS MARKING Timing 60ns access 70ns access 80ns access -6 -7 -8 Packages Leadless 30-pin SIMM M Part Number Example: MT2D18M-6 PIN ASSIGNMENT Top View 30-Pin SIMM

TMPT404

Contextual Info: SPRAGUE/SEM ICOND T 3 GROUP 8 5 1 4 0 1 9 SPRAGUE. SEMICONDS / IC S D • 0513050 0 D G 3 LiG7 7 ■ 93D 0 3 6 0 7 SMALL-OUTLINE BIPOLAR TRANSISTORS PNP Transistors ELECTRICAL CHARACTERISTICS at Tfl = 25°C IcBO Device Type Marking BCW29 C1 BCW30 C2 BCW61A

Contextual Info: M IC R O N MT8C8256 256K X DRAM MODULE DRAM REFRESH: 512 CYCLE/8MS PIN ASSIGNMENT Top View 30 PIN SIMM (MM) Vcc CSS DQ1 A0 A1 DQ2 A2 A3 Vss DQ3 A4 A5 DQ4 A6 A7 DQ5 A8 NC NC DQ6 W Vss DQ7 PRB DQ8 NC RAS NC NC Vcc MARKING • Tim ing 80ns access 100ns access

BCX70RG

Abstract: BCX70RK BCX70RJ
Contextual Info: 4684955 I T T SEMICONDUCTORS ~ fl7 87 D 0 2 3 2 1 D l f | 4 b f l 4 ,i S S G D Q E3S1 S I D NPN TRANSISTORS NPN Silicon Transistors Plastic Package TO-236 Marking Code VcEO h FE at VcEsat at Ices I c/ I b V ce/ I c C0b fT til •5:> Type at at Vce/Ic Vcb

RM73Z1J

Abstract: RM73Z1E 931 2b RN73E2A 536 E .2H RM73B1J RK73H KOA rn73e 2a0805
Contextual Info: XOA A P P E N D IX A FLAT CHIP RESISTORS SPEER ELECTRONICS, INC. PACKAGING & MARKING P A C K A G IN G S P E C IF IC A T IO N S PAC K AG IN G METHOD M ARKING S IZ E CODE T PU N C H ED PA PER 1E 0402 5000/10000 1J (0603) 5000 / 10000 1000 2A (0805) 5000/ 10000 4000 / 10000

FAN7602

Abstract: AN6014 AN-6014 PN2907
Contextual Info: PN2907 MMBT2907 C E C TO-92 BE B SOT-23 Mark: 2B PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings*

CMBT2907

Abstract: CMBT2907A
Contextual Info: CMBT2907 CMBT2907A HL SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P silicon transistors PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMBT2907 = 2B CMBT2907A = 2F _3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _L02_

W15NA

Contextual Info: E3fl33T4 DÜ OÜTBT W BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PA CKA G E O U TLINE DETAILS A LL D IM ENSIO NS IN m m _3.0_ 2.8 0.14

BC850

Abstract: BC850B BCS49 BC849 BC849B BC849C BC850C 8C850
Contextual Info: BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G Pin configuration PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm J5.0 2.8 0.14 0.48 0.38 2.6 2.4 1 = BASE 2 = EMITTER

Contextual Info: CMBT2907 CMBT2907A »IL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4

Contextual Info: ISDN transformer UK0 interface, 2B1Q EP 13, 14.47 mH, 1:1:1 Ordering code: B78421A1720A003 Date: March 2008 Data Sheet  EPCOS AG 2008. Reproduction, publication and dissemination of this publication and the information contained therein without EPCOS’ prior express consent is prohibited.

Contextual Info: ISDN transformers UK0 interface, 2B1Q RM 6, 14.44 mH, 1:1:1 Series/Type: B78386P1580A005 7f…fÁRspp… October 2008 Date: EPCOS AG 2008. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS’ prior express consent is prohibited.