hitachi sr 302
Contextual Info: HI TA C H I / L O G I C / A R R A Y S / M E M S1E D I 44^203 HM514100JP/ZP-7- OGi abl B fibl • H I T E "T- 4 4 ,-2 3 -IS" 4,194,304-Word x 1-Bit Dynamic Random Access Memory ■ DESCRIPTION HM51440QJP Series The Hitachi HM514100 is a CMOS dynamic RAM organized 4,194,304 word x
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hm514100jp/zp-7--------------------304-wordhm51440qjphm514100+320-pincp-20dahitachi sr 302
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Contextual Info: IBM13M32734BCA 32M x 72 2-Bank Registered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 32Mx72 Synchronous DRAM DIMM ; ; | DIMM CAS Latency i fCK iW : • • • • • • • -75A Reg4 I i Units | | Clock Frequency
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ibm13m32734bca168-pin32mx72100mhz+3133mhz19l7297f38442a
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MOSFET IRF460
Abstract: IRF460 irf462
Contextual Info: 4302571 □DS3cî7a 413 • H A R R I HAS S I R F 4 6 0 I R F 4 6 2 N-Channel Power MOSFETs Avalanche-Energy Rated August 1991 Features Package T 0 -2 0 4 A E • 21A and 19A, 500V B O TTO M VIE W • rD S °n = 0 -2 7 0 and 0 .3 5 fl • Single Pulse Avalanche Energy Rated
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43g2271mosfet irf460irf460irf462 |
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A933A
Contextual Info: Preliminary PC133 Synchronous DRAM - 64Mb, 256Mb Features Multiple Burst Read with Single Write Option • High Performance: ! ! -75 D, CL=3 I I -75A, C L= 3 Automatic and Controlled Precharge Command U nits Data Mask for Read/Write control fc K C lo c k F re q u e n c y
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pc133256mbcycles/64msa933a |
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25CC
Abstract: P4C163 P4C163L
Contextual Info: PERFORMANCE SEMI CONDUCTOR 20E D • 7 0 b 2 5 e! 7 00005b3 P4C163/P4C163L ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS SCRAMS T 3 ^ - a ■ s - i a FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply, 10 |iA Typical Current Common I/O Full CMOS, 6T Cell
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70b2sip4c163/p4c163lp4c163l28-pln+728-pnd-17pc-20pc-25pc-35pc25ccp4c163
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m5m5110
Abstract: MSM511001-10 MSM511001-12 T-46 OGD41
Contextual Info: O K I SEMICONDUCTOR G R O U P IDE D • L.724240 0 0 0 4 1 7 4 b I ' / ECS semiconductor - - - M S M 5 1 1 0 0 1 R S / J S / Z S 1,048,576-WORD X 1-BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM511001 is a new generation dynamic RAM organized as 1,048,576 words by 1 bit. The
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754s40msm511001rs/js/zs576-wordmsm511001+918-pinmsm511001-10msm51100pl72424d0d041m5m5110msm511001-12t-46ogd41
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Contextual Info: O K I SEMICONDUCTOR G R O U P IDE D • L.724240 0 0 0 4 1 7 4 ECS semiconductor b I ' / - - - M S M 5 1 1 0 0 1 R S / J S / Z S 1,048,576-WORD X 1-BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM511001 is a new generation dynamic RAM organized as 1,048,576 words by 1 bit. The
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576-wordmsm51100118-pin |
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Contextual Info: ELECTRONIC DESIGNS INC 30 E D • 32301m 0000730 M ■ EDI8F8512C/LP/P m D i Ettekonle Dtslgni In«. • Commercial Four Megabit S R A M Module 512Kx8 Static R A M CM O S, Module P IS lU iO Features iá O T T - V 6 - Z 3 - H The EDI8F8512C/LP/P is a 4096K b'lt CMOS Static 512Kx8 bit CMOS Static
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32301medi8f8512c/lp/p512kx84096k+3128kx8150nst-46-23-14
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T1IS
Abstract: GQQ0731 ragy 3530114
Contextual Info: ELECTRONIC DESIGNS INC 30 E D • 32301m 0000730 M ■ EDI8F8512C/LP/P m D i Ettekonle Dtslgni In«. • Commercial Four Megabit S R A M Module 512Kx8 Static R A M CM O S, Module P IS lU iO Features iá O T T - V 6 - Z 3 - H The EDI8F8512C/LP/P is a 4096K b'lt CMOS Static 512Kx8 bit CMOS Static
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edi8f8512c/lp/p512kx84096k128kx8+828kx8g0g0734t-46-23-14353011mt1isgqq0731ragy3530114
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ah rzj
Abstract: MSM511002-10 MSM511002-12
Contextual Info: O K I d SEMICONDUCTOR B d s e GR O U P 10E D | b ? 2 M B LlO □ □□Mlfl'i fl | m i c o n d u c t o r - - r - y fc - a a - MSM511002RS/JS/ZS . 1,048,576-W ORD X 1 -BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM 511002 is a new generation dynamic RAM organized as 1,048,576 words by 1 bit. The
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ci11simsm511002rs/js/zs576-wqrdmsm511002+418-pinmsm511002-10msm511002-12ah rzj
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nec 2561 equivalent
Abstract: f bj04 TBA 931 765 floppy disk controller 78K3 L435 f305 F423 nec 2401 bg05
Contextual Info: CB-C7, 5-VOLT 0.8-MICRON CELL-BASED CMOS ASIC NEC Electronics Inc. August 1993 Description CB-C7 cell-based product family is a 0.8-micron drawn process with two- or three-layer metalization and is offered in 22 I/O pad ring step sizes. It is ideal for applications such
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nec 2561 equivalentf bj04tba 931765 floppy disk controller+678k3l435f305f423nec 2401bg05
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D65806
Abstract: 9215K1
Contextual Info: tFEB i 7 1993 CMOS-8 5 VOLT, 0 .65-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary January 1993 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are ultra-high performance, sub-m icron gate arrays, targe te d fo r a pp lications
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65-micronxpd65800d658069215k1 |
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IRMT
Abstract: F4620 SO DIMM DRAM 144 Pin Connector Pinout
Contextual Info: IBM13M16734BCA P relim inary 16M X 72 1-B ank R egistered S D R A M M odule Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 16Mx72 Synchronous DRAM DIMM ! -75 A Reg. DIMM CAS Latency • • • • • • • i Clock Cycle tAC \ Clock Access Tim e
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ibm13m16734bca168-pin16mx72133mhz+4a14-4716-01-birmtf4620so dimm dram 144 pin connector pinout
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MB81C78A-35
Abstract: MB81C78A ICE 47E fujitsu 1988 IP-28P-M
Contextual Info: FUJITSU MICROELECTRONICS 47E D BTMTTbS 0G1B77S 0 « F M I /Z April 1990 Edition 3.0 DATA SHEET _ FUJITSU MB81C78A-35/-45 CMOS 64K-BIT HIGH-SPEED SRAM 8K Words x 8 Bits High-Speed CMOS Static Random Access Memory with Automatic Power Down The Fujitsu MB81C78A is a 8,192 words x 8 bits static random access memory
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0g1b77smb81c78a-35/-4564k-bitmb81c78a+8t-46-23-12mb81c78a-35mb81c78a-45c-28p-c28054s-1cice 47efujitsu 1988ip-28p-m
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8251a usart interface from z80
Abstract: UDL TM 500 f922 verilog code for 8254 timer l912 256x32 POWER MODULE TM 31 udl 500 78K3 F5S4
Contextual Info: L4E75BS DÜHBÖGb 3ÔÔ B I N E C E CB-C7, 5-VOLT 0.8-M ICRON CELL-BASED CMOS ASIC NEC NEC Electronics Inc. August 1993 Description Figure 1. Integrated HDD Solution with CBC7 Cell-Based ASIC with Embedded 78K3 MPU, Compiled SRAMs and A/D Converters CB-C7 cell-based product family is a 0.8-micron drawn
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l4e75bs80c42hd043fl238251a usart interface from z80+9udl tm 500f922verilog code for 8254 timerl912256x32power module tm 31udl 50078k3f5s4
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transistor f422
Abstract: transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK
Contextual Info: i O 1993 iir n r, . . NEC E le ctro n ics Inc. Prelim inary Description CMOS-8LCX 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS c ro s s c h e c k te s t s u p p o rt February 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family are ultra-high perform
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ipd658xxtransistor f422transistor f423f422 transistor+3transistor f421nec product naming rulebk-dk
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bv0T
Abstract: 658X
Contextual Info: N E C ELECTRONICS INC b7E D • b4E75S5 QQ3T701 4bD HINECE CMOS-8L 3 -V O LT, 0.50-M IC R O N cm os g a te a r r a y s ä I M t L NEC Electronics Inc. P re lim in a r y Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high per
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b4e75s5qq3t701npd658xxbv0t+1658x
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transistor f422
Abstract: transistor f423 BKDF f422 transistor B00J f422 F423 fet 13187 RJ4B ru4f
Contextual Info: N E C ELECTRONICS INC b7E D NEC NEC Electronics Inc. I b *427525 Q D 3 ci 7 n bTD « N E C E CMOS-8LCX 3-VOLT, O.5O-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT Prelim inary Description O c to b e r 1 9 9 3 Figure 1. Various CMOS-8LCX Packages N EC 's 3-volt C M O S -8L C X family consists of ultra-high
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xpd658xxtransistor f422transistor f423bkdf+7f422 transistorb00jf422f423fet 13187rj4bru4f
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CDMA450
Abstract: dr600
Contextual Info: Advanced Datasheet Ver. 03 SAW Bandpass Filter F4623 Features z RF bandpass filter for CDMA450 Rx. Part z Usable bandwidth 5MHz 460.0 MHz ~ 465.0 MHz z High attenuation z No matching single-balanced operation ( single 50Ω / balance 100Ω ) z Ceramic Surface Mounted Device Package ( 3.0 mm x 3.0mm )
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f4623cdma450300mm/mindr6001-ps03+1dr600
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CDMA450
Abstract: 1-6732
Contextual Info: SAW Bandpass Filter F4621 Features z RF bandpass filter for CDMA450 C-Band Rx. Part z Usable bandwidth 5MHz 460 MHz ~ 465 MHz z High attenuation z No matching 50Ω single-ended operation z Ceramic Surface Mounted Device Package ( 3.8 mm x 3.8 mm ) z RoHS compliant
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f4621cdma450300mm/minnr3017-as02+11-6732
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MB90F462A
Abstract: MB90F463 MB90F463A MB90460 MB90467 MB90F462 F2MC-16LX LQFP-64 MB90F462AP-SH DS07-13714-2E
Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS07-13714-2E 16-bit Proprietary Microcontroller CMOS F2MC-16LX MB90460/465 Series MB90462/467/F462/F462A/F463A/V460 • DESCRIPTION The MB90460/465 series is a line of general-purpose, Fujitsu 16-bit microcontrollers designed for process control
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ds07-13714-2e16-bitf2mc-16lxmb90460/465+9mb90462/467/f462/f462a/f463a/v460mb90f462amb90f463mb90f463amb90460mb90467mb90f462lqfp-64mb90f462ap-sh
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Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS07-13714-2E 16-bit Proprietary Microcontroller CMOS F2MC-16LX MB90460/465 Series MB90462/467/F462/F462A/F463A/V460 • DESCRIPTION The MB90460/465 series is a line of general-purpose, Fujitsu 16-bit microcontrollers designed for process control
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ds07-13714-2e16-bitf2mc-16lxmb90460/465+1mb90462/467/f462/f462a/f463a/v460
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H1061
Abstract: DIP-64P-M01 F2MC-16LX FPT-64P-M06 FPT-64P-M09 MB90460 MB90F462 MB90V460 QFP-64 SDIP-64
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS07-13714-1E 16-bit Proprietary Microcontroller CMOS F2MC-16LX MB90460 Series MB90462/467/F462/V460 • DESCRIPTION The MB90460 series is a line of general-purpose, Fujitsu 16-bit microcontrollers designed for process control
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ds07-13714-1e16-bitf2mc-16lxmb90460+9mb90462/467/f462/v460h1061dip-64p-m01fpt-64p-m06fpt-64p-m09mb90f462mb90v460qfp-64sdip-64
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H1061
Abstract: QFPM06
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS07-13714-1E 16-bit Proprietary Microcontroller CMOS F2MC-16LX MB90460 Series MB90462/467/F462/V460 • DESCRIPTION The MB90460 series is a line of general-purpose, Fujitsu 16-bit microcontrollers designed for process control
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ds07-13714-1e16-bitf2mc-16lxmb90460+4mb90462/467/f462/v460f0112h1061qfpm06
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