F4623 Search Results

CDMA450

Abstract: dr600
Contextual Info: Advanced Datasheet Ver. 03 SAW Bandpass Filter F4623 Features z RF bandpass filter for CDMA450 Rx. Part z Usable bandwidth 5MHz 460.0 MHz ~ 465.0 MHz z High attenuation z No matching single-balanced operation ( single 50Ω / balance 100Ω ) z Ceramic Surface Mounted Device Package ( 3.0 mm x 3.0mm )

CDMA450

Contextual Info: 规格书编号 SPEC NO : 产品规格书 SPECIFICATION CUSTOMER 客 户： PRODUCT 产 品： SAW FILTER MODEL NO 型 号： HD F4623 PREPARED 编 制： CHECKED 审 核： Houshihong APPROVED 批 准： CHARLES D A T E 日 期： 2007-01-25 客户确认 CUSTOMER RECEIVED:

tle 6261 g

Abstract: AoL-12L S-108 SEM 238 TLE TSOP CY7B144 CY7B145 B08L
Contextual Info: 4bE D CYPRESS SEMICONDUCTOR • ESfi^bbS 00ab3SG 2 E3CYP 'T-% -Zl> -\ Z_ PRELIMINARY & CYPRESS ill — ^ s ? SEMICONDUCTOR 8K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features Functional Description • 0.8-mlcron BiCMOS for high per­ formance • High-speed access

F4823

Abstract: F2683
Contextual Info: Panasonic Plastic Film Capacitors for High Frequency Metallized Polypropylene Film Capacitor Type ECWF B D e s ig n e d fo r a p p lic a tio n s w h e re h ig h c u rre n t a n d h ig h fre q u e n c y are re q u ire d • Features • L o w - lo s s • E x c e lle n t fre q u e n c y c h a ra c te ris tic s

Contextual Info: O K I SEMICONDUCTOR G R O U P IDE D • L.724240 0 0 0 4 1 7 4 ECS semiconductor b I ' / - - - M S M 5 1 1 0 0 1 R S / J S / Z S 1,048,576-WORD X 1-BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM511001 is a new generation dynamic RAM organized as 1,048,576 words by 1 bit. The

F45A

Abstract: HDVF389A1D f959 HDMVF38A2D HDBF36A1D HDF1575A f46a HDBF389A1S HDBF44A1DHDBF43A1D HDF1086A
Contextual Info: 深圳市好达电子股份有限公司 好达电子 SAW 产品介绍 应用领域 多 媒 体 用 的 中 频 滤 波 器 模拟 电视 数字 电视 数字 广播 Silicon tuner 内载 波滤 波器 伴音 滤波 器 图像 滤波 器 带通 滤波 器 带通

HM-6516-5

Abstract: HM-6516 HM6516
Contextual Info: HARRIS SEMICOND SECTOR ‘ÌS D E j M30ES71 DOlDYOb v T-46-23-1Z H M -6516 h a r r is 2K x 8 CMOS RAM Features Pinouts TOP VIEW • Low Power Standby. 275pW/MHz Max. • • • • • • • • • Low Power O .

MB8416-20L

Abstract: DIP-24C-C03 mb8416 MB8416-20 PH 37M
Contextual Info: FUJITSU MICROELECTRONICS 78 DE| 37417bB c:iO !.1rm 6 _ F U J IT S U N ICS, INC. M ICRO ELECTRO CMOS 16384-BIT STATIC RANDOM ACCESS MEMORY T_46_23 MB8416-20 MB8416-20L DESCRIPTION The Fujitsu MB8416 is a 2048 word by 8-bit static random ac­ cess memory fabricated with high

Contextual Info: ELECTRONIC DESIGNS INC 30 E D • 32301m 0000730 M ■ EDI8F8512C/LP/P m D i Ettekonle Dtslgni In«. • Commercial Four Megabit S R A M Module 512Kx8 Static R A M CM O S, Module P IS lU iO Features iá O T T - V 6 - Z 3 - H The EDI8F8512C/LP/P is a 4096K b'lt CMOS Static 512Kx8 bit CMOS Static

T1IS

Abstract: GQQ0731 ragy 3530114
Contextual Info: ELECTRONIC DESIGNS INC 30 E D • 32301m 0000730 M ■ EDI8F8512C/LP/P m D i Ettekonle Dtslgni In«. • Commercial Four Megabit S R A M Module 512Kx8 Static R A M CM O S, Module P IS lU iO Features iá O T T - V 6 - Z 3 - H The EDI8F8512C/LP/P is a 4096K b'lt CMOS Static 512Kx8 bit CMOS Static

hitachi sr 302

Contextual Info: HI TA C H I / L O G I C / A R R A Y S / M E M S1E D I 44^203 HM514100JP/ZP-7- OGi abl B fibl • H I T E "T- 4 4 ,-2 3 -IS" 4,194,304-Word x 1-Bit Dynamic Random Access Memory ■ DESCRIPTION HM51440QJP Series The Hitachi HM514100 is a CMOS dynamic RAM organized 4,194,304 word x

MB8418-20L

Abstract: MB8417-20L TC5518 HM6117 m8s4
Contextual Info: FUJITSU MICROELECTRONICS 7B F U JIT S U M IC R O E L E C T R O N IC S . DEI 3 m ñ l \ o B 0003335 1 |~ T-46-23-12; MB8418-20 MB8418-20L INC. CMOS 16,384-BIT STATIC RANDOM ACCESS MEMORY DESCRIPTION The M B8418 can be optimized for high perform ance applications

m5m5110

Abstract: MSM511001-10 MSM511001-12 T-46 OGD41
Contextual Info: O K I SEMICONDUCTOR G R O U P IDE D • L.724240 0 0 0 4 1 7 4 b I ' / ECS semiconductor - - - M S M 5 1 1 0 0 1 R S / J S / Z S 1,048,576-WORD X 1-BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM511001 is a new generation dynamic RAM organized as 1,048,576 words by 1 bit. The

HY61C16-70

Abstract: HY61C16 61C16 k239
Contextual Info: HYUNDAI ELE CTRO NI CS 03 «tO ^U O Q HTUNUA1 D Ë 1 4t.750ññ OOOOOñT 3 | tL fcU IK U N X C S Ö3 D 0 0 0 0 9 D T?4 b “2 3 -1 2 FEATURES DESCRIPTION The HY61C16 is a high speed, low power, 2048-word by 8-bit static CMOS RAM fabricated using highperformance CMOS process technology. This high

ah rzj

Abstract: MSM511002-10 MSM511002-12
Contextual Info: O K I d SEMICONDUCTOR B d s e GR O U P 10E D | b ? 2 M B LlO □ □□Mlfl'i fl | m i c o n d u c t o r - - r - y fc - a a - MSM511002RS/JS/ZS . 1,048,576-W ORD X 1 -BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM 511002 is a new generation dynamic RAM organized as 1,048,576 words by 1 bit. The

Contextual Info: 1 '- MICRON TECHNOLOGY INC 17E D • blllSMT 000177b E ■ ' MICRON ■ MT42C4064 883C TECHMOCOGY INC ■ T - H t- z v n MILITARY VRAM 64K X 4 DRAM with 256 X 4 SAM ! AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SM D 5962-89952 •

s3030

Abstract: f265 f8202 S5050 f3113 f3154 filter f425 F9374 F45-53 F9124
Contextual Info: RF SAW Filters < 400 MHz 400-500 MHz Part Number 500-800 MHz 800-1000 MHz Center Frequency MHz Bandwidth F2184 > 1000 MHz Package Type (MHz) Insertion Loss (dB) 218.5 ±1.5 2.5 S5050 F2431 243.95 ±0.11 3.5 S3838 F2551 255.5 ±0.025 4 S7050 F2651 265.5 ±0.025

MB81C78A-35

Abstract: MB81C78A ICE 47E fujitsu 1988 IP-28P-M
Contextual Info: FUJITSU MICROELECTRONICS 47E D BTMTTbS 0G1B77S 0 « F M I /Z April 1990 Edition 3.0 DATA SHEET _ FUJITSU MB81C78A-35/-45 CMOS 64K-BIT HIGH-SPEED SRAM 8K Words x 8 Bits High-Speed CMOS Static Random Access Memory with Automatic Power Down The Fujitsu MB81C78A is a 8,192 words x 8 bits static random access memory

a6t transistor

Abstract: transistor A6t 15 ed 49
Contextual Info: MICRON T ECH NOLOGY INC 17E D • ^11154=1 OOOlñOk 7 ■ MT5C1608 883C MILITARY SRAM 2K X 8 SRAM T - 4 t - 2 3 * l2 . AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SM D 5962-84036,-89690 • JA N M385I0/291 • RAD-tolerant (consult factory)

Mostek 2716

Abstract: CMOS-440
Contextual Info: S G S-THOHSON a?» 87D 10299 T T | Dr 7 ^ 2 3 7 □ G lD H T 'i f-46-23-12 FEATURES □ Predicted worst case battery life of 11 years @ 70°C □ Data retention in the absence of power □ Data security provided by automatic write protection during power failure