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    HM36 Search Results

    HM36 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    HM3-6504B-9
    Rochester Electronics LLC HM3-6504 - Standard SRAM, 4KX1, 220ns, CMOS PDF Buy

    HM36 Datasheets (357)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    HM3-6116-2
    Matra-Harris Semiconductor 2K x 8 general purpose CMOS SRAM Scan PDF 222.5KB 8
    HM3-6116-2
    Matra-Harris Semiconductor 2K x 8 General Purpose CMOS SRAM Scan PDF 388.01KB 8
    HM3-6116-5
    Matra-Harris Semiconductor 2K x 8 general purpose CMOS SRAM Scan PDF 222.5KB 8
    HM3-6116-5
    Matra-Harris Semiconductor 2K x 8 General Purpose CMOS SRAM Scan PDF 388.01KB 8
    HM3-6116-6
    Matra-Harris Semiconductor 2K x 8 general purpose CMOS SRAM Scan PDF 222.5KB 8
    HM3-6116-6
    Matra-Harris Semiconductor 2K x 8 General Purpose CMOS SRAM Scan PDF 388.01KB 8
    HM3-6116-9
    Matra-Harris Semiconductor 2K x 8 general purpose CMOS SRAM Scan PDF 222.5KB 8
    HM3-6116-9
    Matra-Harris Semiconductor 2K x 8 General Purpose CMOS SRAM Scan PDF 388.01KB 8
    HM3-6116B-5
    Matra-Harris Semiconductor Very low power 2K x 8 general purpose CMOS SRAM Scan PDF 222.5KB 8
    HM3-6116B-5
    Matra-Harris Semiconductor 2K x 8 General Purpose CMOS SRAM Scan PDF 388.01KB 8
    HM3-6116B-9
    Matra-Harris Semiconductor Very low power 2K x 8 general purpose CMOS SRAM Scan PDF 222.5KB 8
    HM3-6116B-9
    Matra-Harris Semiconductor 2K x 8 General Purpose CMOS SRAM Scan PDF 388.01KB 8
    HM3-6116L-2
    Matra-Harris Semiconductor 2K x 8 General Purpose CMOS SRAM Scan PDF 388.01KB 8
    HM3-6116L-2
    Matra-Harris Semiconductor Low power 2K x 8 general purpose CMOS SRAM Scan PDF 222.5KB 8
    HM3-6116L-5
    Matra-Harris Semiconductor Low power 2K x 8 general purpose CMOS SRAM Scan PDF 222.5KB 8
    HM3-6116L-5
    Matra-Harris Semiconductor 2K x 8 General Purpose CMOS SRAM Scan PDF 388.01KB 8
    HM3-6116L-6
    Matra-Harris Semiconductor Low power 2K x 8 general purpose CMOS SRAM Scan PDF 222.5KB 8
    HM3-6116L-6
    Matra-Harris Semiconductor 2K x 8 General Purpose CMOS SRAM Scan PDF 388.01KB 8
    HM3-6116L-9
    Matra-Harris Semiconductor Low power 2K x 8 general purpose CMOS SRAM Scan PDF 222.5KB 8
    HM3-6116L-9
    Matra-Harris Semiconductor 2K x 8 General Purpose CMOS SRAM Scan PDF 388.01KB 8
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    HM36 Price and Stock

    Vishay Semiconductors

    Vishay Semiconductors SE30AFBHM3-6A

    DIODE STANDARD 100V 1.4A DO221AC
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    DigiKey () SE30AFBHM3-6A Digi-Reel 17,590 1
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    SE30AFBHM3-6A Cut Tape 17,590 1
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    Vishay Semiconductors VS-3EJU06HM3-6B

    DIODE STANDARD 600V 3A DO221AC
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    DigiKey () VS-3EJU06HM3-6B Digi-Reel 14,000 1
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    VS-3EJU06HM3-6B Cut Tape 14,000 1
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    Vishay Semiconductors SE30AFDHM3-6A

    DIODE GEN PURP 200V 1.4A DO221AC
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    DigiKey () SE30AFDHM3-6A Cut Tape 13,950 1
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    SE30AFDHM3-6A Digi-Reel 13,950 1
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    SE30AFDHM3-6A Reel 10,500 3,500
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    Vishay Semiconductors SE20AFGHM3-6A

    DIODE STANDARD 400V 1.3A DO221AC
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    DigiKey () SE20AFGHM3-6A Digi-Reel 10,475 1
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    SE20AFGHM3-6A Cut Tape 10,475 1
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    SE20AFGHM3-6A Reel 7,000 3,500
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    Vishay Semiconductors SE30AFGHM3-6A

    DIODE STANDARD 400V 1.4A DO221AC
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    DigiKey () SE30AFGHM3-6A Digi-Reel 9,884 1
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    SE30AFGHM3-6A Cut Tape 9,884 1
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    HM36 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HT 1000-4

    Abstract: HM28-20XXXLF hm86 HM78D-755 HM76-30XXXJLF HM56 BML0603-XXXXLF BWL1206ST-XXXX HM36 HM65
    Contextual Info: Product Selector Guide www.bitechnologies.com Surface Mount Inductors Size mm Max. Model Number HM36 HM36-1211XXXLF HM36-1311XXXLF HM61 L W Inductance @ Zero DC µH Ht 0.001 0.01 1 10 12.5 13.1 10.5 11.2 HM61-10XXXLF HM61-20XXXLF 5.30 10.00 4.60 9.20 4.70/4.95


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    HM36-1211XXXLF HM36-1311XXXLF HM61-10XXXLF HM61-20XXXLF HM62-2610XXXXLF HM62-2815XXXXLF HM62-3214XXXXLF HM62-3715XXXXLF HM65-HXXXLF HM65-XXXLF HT 1000-4 HM28-20XXXLF hm86 HM78D-755 HM76-30XXXJLF HM56 BML0603-XXXXLF BWL1206ST-XXXX HM36 HM65 PDF

    HM200

    Abstract: HM3669
    Contextual Info: HI-SINCERITY Spec. No. : HM200206 Issued Date : 2000.07.01 Revised Date : 2004.11.24 Page No. : 1/4 MICROELECTRONICS CORP. HM3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HM3669 is designed for using in power amplifier applications, power switching


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    HM200206 HM3669 HM3669 OT-89 200oC 183oC 217oC 260oC 245oC HM200 PDF

    Contextual Info: Electrical / Environmental HM36 High Current Low profile low Loss Ferrite SMD Inductor New • Operating Temperature Range -40°C to +130°C Features • Low DCR • High Q over 1MHz • High saturation current • Suitable for DC/DC, POL, VRM Modules. •


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    HM36-1211R95LF HM36-12111R0LF HM36-12111R4LF HM36-12111R5LF HM36-12113R6LF HM36-1311R95LF HM36-13111R4LF HM36-13112R4LF HM36-13116R0LF 100KHz, PDF

    Contextual Info: HM36-12111R0LF summary material content, BI Technologies Corporation Index Item Material Name E CORE Ferrite Core I CORE Ferrite Core 2 COIL Enamelled Copper Wire 3 SOLDER Lead Free Solder 1 4 ADHESIVE Epoxy Ink 5 MARKING Ink Element Composition CAS No Material Mass


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    HM36-12111R0LF PDF

    HM36

    Contextual Info: HM36 Electrical / Environmental • Operating Temperature Range • Operating Frequency High Current Low Profile Low Loss Ferrite Surface Mount Inductors -40°C to +130°C Up to 3MHz S RomHpliant Co Schematic Specifications @ 25°C / Packaging Part Number


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    HM36-1211R95LF HM36-12111R0LF HM36-12111R4LF HM36-12111R5LF HM36-12113R6LF HM36-1311R95LF HM36-13111R4LF HM36-13112R4LF HM36-13116R0LF HM36 PDF

    Contextual Info: Header Connector SPECIFICATIONS Mechanical Contact Retention Force: 0.91Kgf min. Electrical HM36 Seri es R/ A, T/H Type Plug 4.20mm [.165’’] Pitch Voltage Rating: 250V Current Rating: 6.0A per pin Dielectric Withstanding Voltage: 1500V AC Insulation Resistance: 1000MΩ min.


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    91Kgf 1000M PDF

    HM3669

    Abstract: 01673
    Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 2000.07.01 Revised Date : 2000.07.01 Page No. : 1/3 HM3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HM3669 is designed for using in power amplifier applications, power switching application.


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    HM3669 HM3669 01673 PDF

    HM36

    Contextual Info: Electrical / Environmental HM36 High Current Low profile low Loss Ferrite Cube SMD Inductor New • Operating Temperature Range -40°C to +130°C Features • Low DCR • High Q over 1MHz • High saturation current • Suitable for DC/DC, POL, VRM Modules.


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    HM36-12111R0LF HM36-12111R4LF HM36-12111R5LF HM36-12113R6LF HM36-1311R95LF HM36-13111R4LF HM36-13112R4LF HM36-13116R% 12111R0LF 12111R4LF HM36 PDF

    HM1-6551-9

    Abstract: HM1-6551B-9 HM3-6551-9 HM3-6551B-9 HM-6551 HM-6551-9 HM-6551B-9
    Contextual Info: HM-6551 TM 256 x 4 CMOS RAM March 1997 Features Description • • • • • • • • • • • The HM-6551 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high


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    HM-6551 HM-6551 20mW/MHz 220ns HM1-6551-9 HM1-6551B-9 HM3-6551-9 HM3-6551B-9 HM-6551-9 HM-6551B-9 PDF

    HM3-6561-9

    Abstract: HM3-6561 GG3C 6561 HM165619
    Contextual Info: 4fc>E D HARRIS SEMICONP SECTOR 4 3 D 2 2 7 1 □ 0 3 ci D ci l _ T _ • HAS HM-6561 ¡Sì HARRIS S E M I C O N D U C T O R 256 X 4 CMOS RAM February 1992 Description Features • Low Power Standby. 50fiW Max. • Low Power Operation. 20mW/MHz Max.


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    HM-6561 50fiW HM-6561 HM3-6561-9 HM3-6561 GG3C 6561 HM165619 PDF

    HM-6514-9

    Contextual Info: MbE ì> HARRIS SEMICOND SECTOR f f t H U U SEMICONDUCTOR A R R m *4305571 003^110 3 « H A S HM-6514 I S 10 24 x 4 CMOS RAM February 1992 Features Description • The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes


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    HM-6514 HM-6514 HM-6514-9 PDF

    24501BVA

    Abstract: 8102403VA 8102405VA 810240IVA HM1-6504-9 HM1-6504B-9 HM1-6504S-9 HM3-6504-9 HM-6504
    Contextual Info: HM-6504 TM 4096 x 1 CMOS RAM March 1997 Features Description • Low Power Standby. . . . . . . . . . . . . . . . . . . 125µW Max The HM-6504 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and


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    HM-6504 HM-6504 35mW/MHz 24501BVA 8102403VA 8102405VA 810240IVA HM1-6504-9 HM1-6504B-9 HM1-6504S-9 HM3-6504-9 PDF

    Contextual Info: 65748 HM 65749 IM I /V1ATRA- HARRIS SEMICONDUCTOR 1024 x 4 i2 56 z Features • • • • • • • • • • 0 ¿Z r ? 10 Description The HM 65748 and HM 65749 are 4096 bit static Random Access Memory organized as 1024 words by 4 bits using CMOS technology and operating from the single 5V supply.


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    D-8057 x524126 86-05-H PDF

    24502BVA

    Abstract: 8102402VA 8102404VA HM1-6514-9 HM1-6514B-9 HM1-6514S-9 HM3-6514-9 HM3-6514B-9 HM3-6514S-9 HM-6514
    Contextual Info: HM-6514 TM 1024 x 4 CMOS RAM March 1997 Features Description • Low Power Standby. . . . . . . . . . . . . . . . . . . 125µW Max The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and


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    HM-6514 HM-6514 35mW/MHz 24502BVA 8102402VA 8102404VA HM1-6514-9 HM1-6514B-9 HM1-6514S-9 HM3-6514-9 HM3-6514B-9 HM3-6514S-9 PDF

    mi 6514

    Abstract: 6514 HM3-6514-9 6514S 24502BVA 8102402VA 8102404VA HM1-6514-9 HM1-6514B-9 HM1-6514S-9
    Contextual Info: HM-6514 S em iconductor 1 0 2 4 x 4 CMOS RAM March 1997 Description Features Low Power Standby. 125^iW Max The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes


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    HM-6514 35mW/MHz 120/200ns HM-6514 mi 6514 6514 HM3-6514-9 6514S 24502BVA 8102402VA 8102404VA HM1-6514-9 HM1-6514B-9 HM1-6514S-9 PDF

    HM1-6504-9

    Abstract: HM3-6504-9 HM4-6504-9 HM-6504 HM-6504-9 8102405VA 810240IVA HM1-6504B-9 HM1-6504S-9 HM-6504S-9
    Contextual Info: HM-6504 HARRIS æ S E M I C O N D U C T O R 4096 x 1 CMOS RAM March 1997 Features Description • Low Power S tan db y. 125|aW Max • Low Power O p e ra tio n . 35mW /MHz Max • Data R e te n tio n . at 2.0V Min


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    HM-6504 35mW/MHz 120/200ns HM-6504 HM1-6504-9 HM3-6504-9 HM4-6504-9 HM-6504-9 8102405VA 810240IVA HM1-6504B-9 HM1-6504S-9 HM-6504S-9 PDF

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


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    1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    HM16S

    Abstract: 203a14 65536X1
    Contextual Info: rmirtini -o * HM 65787 64K x 1 HIGH SPEED CMOS SRAM O C T O B E R 19 87 Pinouts Features TO P VIEW DIL (22 PINS) • • • • • • • • FAST ACCESS TIME : 25/35/45 ns max STANDBY CURRENT : 20 mA OPERATING CURRENT : 100 mA ASYNCHRONOUS INPUTS TTL COMPATIBLE INPUTS AND OUTPUTS


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    Mi-65787 HM1-65787 HM3-65787 HMT-65787 HM4-65787 HM16S 203a14 65536X1 PDF

    Contextual Info: HM-6518 H A R R IS æ S E M I C O N D U C T O R 1024x1 CMOS RAM February 1992 Features Description • Low Power Standby. 50nW Max. The HM-6518 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous


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    HM-6518 1024x1 HM-6518 20mW/MHz 180ns PDF

    HM3-6561-9

    Abstract: HM3-6561B-9 hm1-6561b/883
    Contextual Info: f f t H A R R HM-6561 I S S E M I C O N D U C T O R 256 X 4 CMOS RAM February 1992 Features Description • Low Power Standby. 50|iW Max. The HM-6561 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design


    OCR Scan
    HM-6561 HM-6561 20mW/MHz 200ns HM3-6561-9 HM3-6561B-9 hm1-6561b/883 PDF

    6504

    Abstract: HM1-6504-9 HM3-6504-9 6504-9 24501BVA 8102403VA 8102405VA 810240IVA HM1-6504B-9 HM1-6504S-9
    Contextual Info: HM-6504 4096 x 1 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . 125µW Max The HM-6504 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low


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    HM-6504 HM-6504 35mW/MHz 6504 HM1-6504-9 HM3-6504-9 6504-9 24501BVA 8102403VA 8102405VA 810240IVA HM1-6504B-9 HM1-6504S-9 PDF

    HM-6508-9

    Abstract: 6508 intersil HM1-6508-9 HM1-6508B-9 HM3-6508-9 HM3-6508B-9 HM-6508 HM-6508B-9
    Contextual Info: HM-6508 TM 1024 x 1 CMOS RAM March 1997 Features Description • Low Power Standby. . . . . . . . . . . . . . . . . . . . 50µW Max The HM-6508 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation.


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    HM-6508 HM-6508 20mW/MHz 180ns HM-6508-9 6508 intersil HM1-6508-9 HM1-6508B-9 HM3-6508-9 HM3-6508B-9 HM-6508B-9 PDF

    g 6551

    Abstract: 6551 ic 6551 AN 6551
    Contextual Info: HM-6551 HARRIS S E M I C O N D U C T O R 256 x 4 CMOS RAM March 1997 Description Features Low Power Standby. 50|iW Max Low Power O p eratio n . 20mW/MHz Max Fast Access Max


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    HM-6551 HM-6551 g 6551 6551 ic 6551 AN 6551 PDF