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    HM36 Search Results

    HM36 Datasheets (357)

    Matra-Harris Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    HM3-6116-2
    Matra-Harris Semiconductor 2K x 8 general purpose CMOS SRAM Scan PDF 222.5KB 8
    HM3-6116-2
    Matra-Harris Semiconductor 2K x 8 General Purpose CMOS SRAM Scan PDF 388.01KB 8
    HM3-6116-5
    Matra-Harris Semiconductor 2K x 8 general purpose CMOS SRAM Scan PDF 222.5KB 8
    HM3-6116-5
    Matra-Harris Semiconductor 2K x 8 General Purpose CMOS SRAM Scan PDF 388.01KB 8
    HM3-6116-6
    Matra-Harris Semiconductor 2K x 8 general purpose CMOS SRAM Scan PDF 222.5KB 8
    HM3-6116-6
    Matra-Harris Semiconductor 2K x 8 General Purpose CMOS SRAM Scan PDF 388.01KB 8
    HM3-6116-9
    Matra-Harris Semiconductor 2K x 8 general purpose CMOS SRAM Scan PDF 222.5KB 8
    HM3-6116-9
    Matra-Harris Semiconductor 2K x 8 General Purpose CMOS SRAM Scan PDF 388.01KB 8
    HM3-6116B-5
    Matra-Harris Semiconductor Very low power 2K x 8 general purpose CMOS SRAM Scan PDF 222.5KB 8
    HM3-6116B-5
    Matra-Harris Semiconductor 2K x 8 General Purpose CMOS SRAM Scan PDF 388.01KB 8
    HM3-6116B-9
    Matra-Harris Semiconductor Very low power 2K x 8 general purpose CMOS SRAM Scan PDF 222.5KB 8
    HM3-6116B-9
    Matra-Harris Semiconductor 2K x 8 General Purpose CMOS SRAM Scan PDF 388.01KB 8
    HM3-6116L-2
    Matra-Harris Semiconductor 2K x 8 General Purpose CMOS SRAM Scan PDF 388.01KB 8
    HM3-6116L-2
    Matra-Harris Semiconductor Low power 2K x 8 general purpose CMOS SRAM Scan PDF 222.5KB 8
    HM3-6116L-5
    Matra-Harris Semiconductor Low power 2K x 8 general purpose CMOS SRAM Scan PDF 222.5KB 8
    HM3-6116L-5
    Matra-Harris Semiconductor 2K x 8 General Purpose CMOS SRAM Scan PDF 388.01KB 8
    HM3-6116L-6
    Matra-Harris Semiconductor Low power 2K x 8 general purpose CMOS SRAM Scan PDF 222.5KB 8
    HM3-6116L-6
    Matra-Harris Semiconductor 2K x 8 General Purpose CMOS SRAM Scan PDF 388.01KB 8
    HM3-6116L-9
    Matra-Harris Semiconductor Low power 2K x 8 general purpose CMOS SRAM Scan PDF 222.5KB 8
    HM3-6116L-9
    Matra-Harris Semiconductor 2K x 8 General Purpose CMOS SRAM Scan PDF 388.01KB 8
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    HM36 Price and Stock

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    Honeywell Sensing and Control 10HM36-REL-PGM

    SEALED SWITCH
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    Master Electronics 10HM36-REL-PGM
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    • 100 $6882.13
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    • 10000 $6882.13
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    Harris Semiconductor HM3-6508-9

    HM3-6508-9
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical HM3-6508-9 15,306 33
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    Rochester Electronics HM3-6508-9 15,306 1
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    • 100 $8.65
    • 1000 $7.74
    • 10000 $7.29
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    Harris Semiconductor HM3-6508-5

    HM3-6508-5
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    Verical HM3-6508-5 1,316 63
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    Rochester Electronics HM3-6508-5 1,316 1
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    • 100 $4.55
    • 1000 $4.07
    • 10000 $3.83
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    Harris Semiconductor HM3-6551B-9

    HM3-6551B-9
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical () HM3-6551B-9 358 49
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    HM3-6551B-9 170 49
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    HM3-6551B-9 50 49
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    Rochester Electronics HM3-6551B-9 578 1
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    • 100 $5.90
    • 1000 $5.28
    • 10000 $4.97
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    Harris Semiconductor HM3-6508B-9

    HM3-6508B-9
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical HM3-6508B-9 243 46
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    Rochester Electronics HM3-6508B-9 243 1
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    HM36 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HT 1000-4

    Abstract: HM28-20XXXLF hm86 HM78D-755 HM76-30XXXJLF HM56 BML0603-XXXXLF BWL1206ST-XXXX HM36 HM65
    Contextual Info: Product Selector Guide www.bitechnologies.com Surface Mount Inductors Size mm Max. Model Number HM36 HM36-1211XXXLF HM36-1311XXXLF HM61 L W Inductance @ Zero DC µH Ht 0.001 0.01 1 10 12.5 13.1 10.5 11.2 HM61-10XXXLF HM61-20XXXLF 5.30 10.00 4.60 9.20 4.70/4.95


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    hm36-1211xxxlfhm36-1311xxxlfhm61-10xxxlfhm61-20xxxlf+16hm62-2610xxxxlfhm62-2815xxxxlfhm62-3214xxxxlfhm62-3715xxxxlfhm65-hxxxlfhm65-xxxlfht 1000-4hm28-20xxxlfhm86hm78d-755hm76-30xxxjlfhm56bml0603-xxxxlfbwl1206st-xxxxhm36hm65 PDF

    HM200

    Abstract: HM3669
    Contextual Info: HI-SINCERITY Spec. No. : HM200206 Issued Date : 2000.07.01 Revised Date : 2004.11.24 Page No. : 1/4 MICROELECTRONICS CORP. HM3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HM3669 is designed for using in power amplifier applications, power switching


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    hm200206hm3669ot-89200oc+5183oc217oc260oc245ochm200 PDF

    Contextual Info: Electrical / Environmental HM36 High Current Low profile low Loss Ferrite SMD Inductor New • Operating Temperature Range -40°C to +130°C Features • Low DCR • High Q over 1MHz • High saturation current • Suitable for DC/DC, POL, VRM Modules. •


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    hm36-1211r95lfhm36-12111r0lfhm36-12111r4lfhm36-12111r5lf+6hm36-12113r6lfhm36-1311r95lfhm36-13111r4lfhm36-13112r4lfhm36-13116r0lf100khz PDF

    Contextual Info: HM36-12111R0LF summary material content, BI Technologies Corporation Index Item Material Name E CORE Ferrite Core I CORE Ferrite Core 2 COIL Enamelled Copper Wire 3 SOLDER Lead Free Solder 1 4 ADHESIVE Epoxy Ink 5 MARKING Ink Element Composition CAS No Material Mass


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    hm36-12111r0lf PDF

    HM36

    Contextual Info: HM36 Electrical / Environmental • Operating Temperature Range • Operating Frequency High Current Low Profile Low Loss Ferrite Surface Mount Inductors -40°C to +130°C Up to 3MHz S RomHpliant Co Schematic Specifications @ 25°C / Packaging Part Number


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    hm36-1211r95lfhm36-12111r0lfhm36-12111r4lfhm36-12111r5lf+6hm36-12113r6lfhm36-1311r95lfhm36-13111r4lfhm36-13112r4lfhm36-13116r0lfhm36 PDF

    Contextual Info: Header Connector SPECIFICATIONS Mechanical Contact Retention Force: 0.91Kgf min. Electrical HM36 Seri es R/ A, T/H Type Plug 4.20mm [.165’’] Pitch Voltage Rating: 250V Current Rating: 6.0A per pin Dielectric Withstanding Voltage: 1500V AC Insulation Resistance: 1000MΩ min.


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    91kgf1000m PDF

    HM3669

    Abstract: 01673
    Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 2000.07.01 Revised Date : 2000.07.01 Page No. : 1/3 HM3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HM3669 is designed for using in power amplifier applications, power switching application.


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    hm366901673 PDF

    HM36

    Contextual Info: Electrical / Environmental HM36 High Current Low profile low Loss Ferrite Cube SMD Inductor New • Operating Temperature Range -40°C to +130°C Features • Low DCR • High Q over 1MHz • High saturation current • Suitable for DC/DC, POL, VRM Modules.


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    hm36-12111r0lfhm36-12111r4lfhm36-12111r5lfhm36-12113r6lf+7hm36-1311r95lfhm36-13111r4lfhm36-13112r4lfhm36-13116r12111r0lf12111r4lfhm36 PDF

    HM1-6551-9

    Abstract: HM1-6551B-9 HM3-6551-9 HM3-6551B-9 HM-6551 HM-6551-9 HM-6551B-9
    Contextual Info: HM-6551 TM 256 x 4 CMOS RAM March 1997 Features Description • • • • • • • • • • • The HM-6551 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high


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    hm-655120mw/mhz220nshm1-6551-9+5hm1-6551b-9hm3-6551-9hm3-6551b-9hm-6551-9hm-6551b-9 PDF

    HM3-6561-9

    Abstract: HM3-6561 GG3C 6561 HM165619
    Contextual Info: 4fc>E D HARRIS SEMICONP SECTOR 4 3 D 2 2 7 1 □ 0 3 ci D ci l _ T _ • HAS HM-6561 ¡Sì HARRIS S E M I C O N D U C T O R 256 X 4 CMOS RAM February 1992 Description Features • Low Power Standby. 50fiW Max. • Low Power Operation. 20mW/MHz Max.


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    hm-656150fiwhm3-6561-9hm3-6561+3gg3c6561hm165619 PDF

    HM-6514-9

    Contextual Info: MbE ì> HARRIS SEMICOND SECTOR f f t H U U SEMICONDUCTOR A R R m *4305571 003^110 3 « H A S HM-6514 I S 10 24 x 4 CMOS RAM February 1992 Features Description • The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes


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    hm-6514hm-6514-9 PDF

    24501BVA

    Abstract: 8102403VA 8102405VA 810240IVA HM1-6504-9 HM1-6504B-9 HM1-6504S-9 HM3-6504-9 HM-6504
    Contextual Info: HM-6504 TM 4096 x 1 CMOS RAM March 1997 Features Description • Low Power Standby. . . . . . . . . . . . . . . . . . . 125µW Max The HM-6504 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and


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    hm-650435mw/mhz24501bva8102403va+68102405va810240ivahm1-6504-9hm1-6504b-9hm1-6504s-9hm3-6504-9 PDF

    Contextual Info: 65748 HM 65749 IM I /V1ATRA- HARRIS SEMICONDUCTOR 1024 x 4 i2 56 z Features • • • • • • • • • • 0 ¿Z r ? 10 Description The HM 65748 and HM 65749 are 4096 bit static Random Access Memory organized as 1024 words by 4 bits using CMOS technology and operating from the single 5V supply.


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    d-8057x52412686-05-h PDF

    24502BVA

    Abstract: 8102402VA 8102404VA HM1-6514-9 HM1-6514B-9 HM1-6514S-9 HM3-6514-9 HM3-6514B-9 HM3-6514S-9 HM-6514
    Contextual Info: HM-6514 TM 1024 x 4 CMOS RAM March 1997 Features Description • Low Power Standby. . . . . . . . . . . . . . . . . . . 125µW Max The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and


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    hm-651435mw/mhz24502bva8102402va+78102404vahm1-6514-9hm1-6514b-9hm1-6514s-9hm3-6514-9hm3-6514b-9hm3-6514s-9 PDF

    mi 6514

    Abstract: 6514 HM3-6514-9 6514S 24502BVA 8102402VA 8102404VA HM1-6514-9 HM1-6514B-9 HM1-6514S-9
    Contextual Info: HM-6514 S em iconductor 1 0 2 4 x 4 CMOS RAM March 1997 Description Features Low Power Standby. 125^iW Max The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes


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    hm-651435mw/mhz120/200nsmi 6514+96514hm3-6514-96514s24502bva8102402va8102404vahm1-6514-9hm1-6514b-9hm1-6514s-9 PDF

    HM1-6504-9

    Abstract: HM3-6504-9 HM4-6504-9 HM-6504 HM-6504-9 8102405VA 810240IVA HM1-6504B-9 HM1-6504S-9 HM-6504S-9
    Contextual Info: HM-6504 HARRIS æ S E M I C O N D U C T O R 4096 x 1 CMOS RAM March 1997 Features Description • Low Power S tan db y. 125|aW Max • Low Power O p e ra tio n . 35mW /MHz Max • Data R e te n tio n . at 2.0V Min


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    hm-650435mw/mhz120/200nshm1-6504-9+8hm3-6504-9hm4-6504-9hm-6504-98102405va810240ivahm1-6504b-9hm1-6504s-9hm-6504s-9 PDF

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


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    1n32451n3611gp1n3612gp1n3613gp+161n3614gp1n37251n3957gp1n4001gp1n4002gp1n4003gptca780tfk u 111 btfk u 4614 btfk s 186 ptfk u 217 btfk bp w 41 ntfk bpw 41 ntfk 880tfk 148tdsr 5150 g PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    p462-ndp463-ndlng295lfcp2ulng395mftp5u+11us2011schematic diagram atx power supply 500wpioneer pal 012a1000w inverter pure sine wave schematic diagram600va numeric ups circuit diagramswinbond bios 25064tle 9180 infineonsmsc mec 1300 nutbe schematic diagram inverter 2000wdk55circuit diagram of luminous 600va ups PDF

    HM16S

    Abstract: 203a14 65536X1
    Contextual Info: rmirtini -o * HM 65787 64K x 1 HIGH SPEED CMOS SRAM O C T O B E R 19 87 Pinouts Features TO P VIEW DIL (22 PINS) • • • • • • • • FAST ACCESS TIME : 25/35/45 ns max STANDBY CURRENT : 20 mA OPERATING CURRENT : 100 mA ASYNCHRONOUS INPUTS TTL COMPATIBLE INPUTS AND OUTPUTS


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    mi-65787hm1-65787hm3-65787hmt-65787+4hm4-65787hm16s203a1465536x1 PDF

    Contextual Info: HM-6518 H A R R IS æ S E M I C O N D U C T O R 1024x1 CMOS RAM February 1992 Features Description • Low Power Standby. 50nW Max. The HM-6518 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous


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    hm-65181024x120mw/mhz180ns PDF

    HM3-6561-9

    Abstract: HM3-6561B-9 hm1-6561b/883
    Contextual Info: f f t H A R R HM-6561 I S S E M I C O N D U C T O R 256 X 4 CMOS RAM February 1992 Features Description • Low Power Standby. 50|iW Max. The HM-6561 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design


    OCR Scan
    hm-656120mw/mhz200nshm3-6561-9+2hm3-6561b-9hm1-6561b/883 PDF

    6504

    Abstract: HM1-6504-9 HM3-6504-9 6504-9 24501BVA 8102403VA 8102405VA 810240IVA HM1-6504B-9 HM1-6504S-9
    Contextual Info: HM-6504 4096 x 1 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . 125µW Max The HM-6504 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low


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    hm-650435mw/mhz6504hm1-6504-9+8hm3-6504-96504-924501bva8102403va8102405va810240ivahm1-6504b-9hm1-6504s-9 PDF

    HM-6508-9

    Abstract: 6508 intersil HM1-6508-9 HM1-6508B-9 HM3-6508-9 HM3-6508B-9 HM-6508 HM-6508B-9
    Contextual Info: HM-6508 TM 1024 x 1 CMOS RAM March 1997 Features Description • Low Power Standby. . . . . . . . . . . . . . . . . . . . 50µW Max The HM-6508 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation.


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    hm-650820mw/mhz180nshm-6508-9+66508 intersilhm1-6508-9hm1-6508b-9hm3-6508-9hm3-6508b-9hm-6508b-9 PDF

    g 6551

    Abstract: 6551 ic 6551 AN 6551
    Contextual Info: HM-6551 HARRIS S E M I C O N D U C T O R 256 x 4 CMOS RAM March 1997 Description Features Low Power Standby. 50|iW Max Low Power O p eratio n . 20mW/MHz Max Fast Access Max


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    hm-6551g 65516551ic 6551+1an 6551 PDF