810240IVA Search Results

810240IVA Datasheets (2)

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Intersil

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
810240IVA		Intersil	4096 x 1 CMOS RAM	Original	PDF	94.73KB	8
810240IVA		Intersil	4096 x 1 CMOS RAM	Original	PDF	47.87KB	8

810240IVA Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
24501BVA Abstract: 8102403VA 8102405VA 810240IVA HM1-6504-9 HM1-6504B-9 HM1-6504S-9 HM3-6504-9 HM-6504 Contextual Info: HM-6504 TM 4096 x 1 CMOS RAM March 1997 Features Description • Low Power Standby. . . . . . . . . . . . . . . . . . . 125µW Max The HM-6504 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and	Original	hm-6504 35mw/mhz 24501bva 8102403va +68102405va 810240iva hm1-6504-9 hm1-6504b-9 hm1-6504s-9 hm3-6504-9	PDF
HM1-6504-9 Abstract: HM3-6504-9 HM4-6504-9 HM-6504 HM-6504-9 8102405VA 810240IVA HM1-6504B-9 HM1-6504S-9 HM-6504S-9 Contextual Info: HM-6504 HARRIS æ S E M I C O N D U C T O R 4096 x 1 CMOS RAM March 1997 Features Description • Low Power S tan db y. 125\|aW Max • Low Power O p e ra tio n . 35mW /MHz Max • Data R e te n tio n . at 2.0V Min	OCR Scan	hm-6504 35mw/mhz 120/200ns hm1-6504-9 +8hm3-6504-9 hm4-6504-9 hm-6504-9 8102405va 810240iva hm1-6504b-9 hm1-6504s-9 hm-6504s-9	PDF
6504 Abstract: HM1-6504-9 HM3-6504-9 6504-9 24501BVA 8102403VA 8102405VA 810240IVA HM1-6504B-9 HM1-6504S-9 Contextual Info: HM-6504 4096 x 1 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . 125µW Max The HM-6504 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low	Original	hm-6504 35mw/mhz 6504 hm1-6504-9 +8hm3-6504-9 6504-9 24501bva 8102403va 8102405va 810240iva hm1-6504b-9 hm1-6504s-9	PDF
6504 Abstract: 6132 RAM Contextual Info: HM-6504 HARRIS S E M I C O N D U C T O R 4096 x 1 CMOS RAM March 1997 Features Description • Low Power Standby. 125\|iW Max The HM-6504 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes	OCR Scan	hm-6504 6504 6132 ram	PDF
6132 RAM Contextual Info: HM-6504 fü HARRIS S E M I C O N D U C T O R 4096 x 1 C M O S RAM August 1996 Features Description The HM-6504 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low	OCR Scan	hm-6504 6132 ram	PDF
6132 RAM Abstract: HM-6504-9 Contextual Info: HM-6504 S e m iconductor 4096 x 1 CMOS RAM March 1997 Description Features Low Power Standby. 125^iW Max Low Power O p eratio n . 35mW/MHz Max Data 2.0V Min	OCR Scan	hm-6504 6132 ram hm-6504-9	PDF
6504-9 Abstract: HM1-6504-9 6504-8 Contextual Info: HM-6504 ff! HARRIS S E MI C O N D U C T O R 4096 February 1992 X 1 CMOS RAM Features Description The HM-6504 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low	OCR Scan	hm-6504 6504-9 hm1-6504-9 6504-8	PDF
Contextual Info: HARRIS SEMICOND SECTOR 4bE D • 4302271 OOB^lOM 3 « H A S HM-6504 “ T -M -fe -Z 5 -0 5 4096 February 1992 X 1 CMOS RAM Features Description • Low Power Standby. 125\|iW Max. The HM-6504 is a 4096 x 1 static CMOS RAM fabricated	OCR Scan	hm-6504 35mw/mhzmax 120/200ns	PDF
HM3-6504-9 Abstract: HM-6504 24501BVA 8102403VA 8102405VA 810240IVA HM1-6504-9 HM1-6504B-9 HM1-6504S-9 6504 Contextual Info: HM-6504 S E M I C O N D U C T O R 4096 x 1 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . 125µW Max The HM-6504 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes	Original	hm-6504 35mw/mhz hm3-6504-9 24501bva +78102403va 8102405va 810240iva hm1-6504-9 hm1-6504b-9 hm1-6504s-9 6504	PDF