diode cross reference
Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Contextual Info: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS
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diode cross referencein5408 equivalentdiotec electronicsin5408 diode+61n4008pbl302rgp20 17 diode rectifier1n4000 1n4004 1n4002rp602pbp205
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MUR1560 equivalent
Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in
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mbrd835lvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605mur1560 equivalent1n4004 smas1a sod 88s1a marking code sod 881n5189ss33 smadiode marking us1jdiode 6a106tq035usd745c equivalent
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1n5822 trr
Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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mbrd1035ctlvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe6051n5822 trra14f diodefr105 diodemr850diode a14abyv27 200 taplt2a02mbr3100 06301n4007 sod-123ses50
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OZ 9983
Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —
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mbrb3030ctlvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605oz 9983mbr3045pt transistor940 629 motorola 220motorola marking code k 652 to-220mur3030transistor bc 456diode marking 1n4007 motorola1n2069a14f diodebyv33-45
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Diode 1N4007 DO-7 Rectifier Diode
Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced
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mbrm120et3vhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605diode 1n4007 do-7 rectifier diodefe8dmarking bcvba157* diodemur160 smadiode rgp10gmbrd360cathode top 1n56191n2069mur120 equivalent diode
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MDA2501
Abstract: pbl302 g1756 g1756 Diode MDA2502 MDA970A6 MDA3510 MDA2500 MDA3502 Bridge rectifier mda970a1
Contextual Info: DIOTEC ELECTRONICS CORP SflE D • Sfl^lG? ÜDOOlfl^ bTT WÊDIX Appendix IV: Cross Reference Tables <x^o\ _oZ_ SCHOTTKY BARRIER DIODES: INDUSTRY PART NO. 1N5817 1N5818 1N5819 1N5820 1N5821 1N5822 1N5823 1N5824 1N5825 MBR1035 MBR1045 MBR1050 MBR1060 MBR1090
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1n58171n56181n58181n5819+121n58201n5821mda2501pbl302g1756g1756 diodemda2502mda970a6mda3510mda2500mda3502 bridge rectifiermda970a1
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gi1303
Contextual Info: GI1301 THRU GI1304 GLASS PASSIVATED FAST EFFICIENT RECTIFIER Voltage - 50 to 200 Volts Current - 6.0 Amperes FEATURES ♦ ♦ ♦ ♦ G4 ♦ ♦ ♦ ♦ I 1.0 MIN. 25.4 .180 (4.6) .115 (2.9) 1 ♦ IX. V 1 .042 11.07) .038 (.962) Glass passivated cavity-free junction
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1N5498
Abstract: CA542 AP6KE91A CGJ-1 DF06S 214 H AG 48 2KBP10M I1404 P6KE200 602 CA-592 BZWO4P
Contextual Info: NUMERICAL INDEX 1.5KA6.8.A .564 1.5KE22C.CA. 592 1.5KE170.A. 592 1N4383GP. 1.5KA7.5.A.564 1.5KE24.A.592 1ÆKE170C.CA.592 1N4384GP.244
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5ka105ka115ka125ka13+165ka155ka165ka185ka205ka225ka241n5498ca542ap6ke91acgj-1df06s 214 hag 48 2kbp10mi1404p6ke200 602ca-592bzwo4p
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stpr16
Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •
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murb1620ctvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605stpr16mur480e340l-02pk mur 460bv 202 01581n541ak sot23stps2045ss33 smba14f diode
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b2545 transistor
Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection
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mbr2535ctmbr2545ctb2535b2545+14vhe205vhe210vhe215vhe220vhe2401b2545 transistorto220 mur460byv43-45mur 460 0801mr756rlmur420 diodeequivalent transistor b25356a10 bl diodediode a14a surface
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MR2835S equivalent
Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected
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mbr6045ptvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605mr2835s equivalenta14f diode1n5404 diodefe16amur860 equivalentmur1620ctmur420 diodeusd745c equivalentmbrd360pr1502
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MUR1560 equivalent
Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
Contextual Info: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON
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mr852vhe1401vhe1402vhe1403+13vhe1404vhe205vhe210mur1560 equivalent1n4936 equivalentmur1100e equivalent1n5404 equivalentmur620ct equivalentmur420 equivalentmur1620ct equivalentbyv19-45mur1660ct equivalentmur1520 equivalent
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mur1650
Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and
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mbrb1045vhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605mur1650t4 sod-123 1n4004mr25101n2069ses5001mur420 equivalentct pr1504equivalent for fr302 diodemur 460 switchdiode a14a surface mount
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BY27-150
Abstract: GENERAL INSTRUMENT b80c5000 BY207 S8360 BYX55-600 B80C1500M b40c3700 BY500 general instrument JJTX1N5615 BRIDGE RECTIFIERS b80c3700
Contextual Info: INTRODUCTION General Instrument Corporation Is a major multinational company manufacturing a wide range of products from data systems, broadband communications, and components to semiconductor products. The cor poration, which has been in existence over 50 years, has manufacturing
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sp10-1006zgpkm102gp1m10azgp10-110b+16zgp10-12zgp10-12qazgp10-1206zgp10-130zgp10-13qazgp10-130bby27-150general instrument b80c5000by207s8360byx55-600b80c1500mb40c3700by500 general instrumentjjtx1n5615bridge rectifiers b80c3700
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A14F diode
Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
Contextual Info: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.
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murs220t3vhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605a14f diodediode marking es2dv352dc "transient voltage suppressordiode a14arg3j 005sr10020010c357d-011n2069
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equivalent components of diode 1N5399
Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
Contextual Info: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected
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mbr6045wtvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605equivalent components of diode 1n5399diode ses50016a10 bl diodeequivalent for fr302 diodeequivalent components of diode her104fe8b diodefe8dgi756 diodea14f diodemur420 diode
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PK MUR 460
Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
Contextual Info: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,
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mbr340vhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605pk mur 460pk mur460pk mur460 1110gi756 diodecarrier 30bq015usd11200525 transient voltage suppressorsdiode a14a surfacess14 sod123mbrd360
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FE16B
Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Contextual Info: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —
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mbrp60035ctlvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605fe16bmbr3045pt transistorfr102 sod-1231n4007 sod-123byv43-45byv19-45mur1660ct equivalentmur460 blfep16dt 0032mur420 equivalent
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GI1302
Abstract: GI1303
Contextual Info: GI1301 THRU GI1304 GLASS PASSIVATED FAST EPITAXIAL RECTIFIER Voltage - 50 to 200 Volts Current - 6.0 Amperes FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Glass passivated cavity-free junction Superfast recovery times-epitaxial construction Low forward voltage, high current capability
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gi1301gi1304il-s-19500milstd-750+2gi1302gi1303
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U840 diode motorola
Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Contextual Info: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000 SCILLC, 2000 Previous Edition 1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in
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dl151/dnov-2000r14525u840 diode motorola+9motorola u860 diodediode u1560b2045 akau1560 diodeu860 diodeu1560diode u3ju820 diodefast recovery diode ses5001
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GI1304
Abstract: GI1301 GI1303
Contextual Info: G I1 3 0 1 T H R U G I1 3 0 4 GLASS PASSIVATED FAST EPITAXIAL RECTIFIER Voltage - 50 to 200 Volts Current -6 .0 Amperes FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Glass passivated cavity-free junction Superfast recovery times-epitaxial construction Low forward voltage, high current capability
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gi1304306olmil-s-19500052s2+2gi1301gi1303
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mr852
Abstract: DIODE MUR410 BA 5904 A F P RS1G footprint wave soldering MUR460 BL mur1650 BYV1945 murs160t3 smb MBRD360 TRANSISTOR 534
Contextual Info: MBRM120LT3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced
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mbrm120lt3vhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605mr852diode mur410ba 5904 a f prs1g footprint wave solderingmur460 blmur1650byv1945murs160t3 smbmbrd360transistor 534
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MUR420 diode
Abstract: MUR860 equivalent Diode 31DQ06 mr760 DIODE usd745c equivalent 1N5186GP 1N2069 diode MARKING BCJ P600K SES5001 cross reference
Contextual Info: MBRM140T3 Advance Information Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package http://onsemi.com The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal
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mbrm140t3vhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605mur420 diodemur860 equivalentdiode 31dq06mr760 diodeusd745c equivalent1n5186gp1n2069diode marking bcjp600kses5001 cross reference
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diode A14A surface mount
Abstract: SES5001 diode A14F diode mur120 equivalent diode diode A14A surface APPLICATION DIODE 1N5406 BC 536 PR3002 diode MBRD360 6A10 BL diode
Contextual Info: MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT MBRD620CT, MBRD640CT and MBRD660CT are Preferred Devices SWITCHMODE Power Rectifiers http://onsemi.com DPAK Surface Mount Package SCHOTTKY BARRIER RECTIFIERS 6.0 AMPERES 20 TO 60 VOLTS . . . in switching power supplies, inverters and as free wheeling
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mbrd620ctmbrd630ctmbrd640ctmbrd650ct+13mbrd660ctvhe205vhe210diode a14a surface mountses5001 diodea14f diodemur120 equivalent diodediode a14a surfaceapplication diode 1n5406bc 536pr3002 diodembrd3606a10 bl diode
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