SMD Transistors w04 sot-23
Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.
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represent9-14smd transistors w04 sot-23transistor sot-23 w04sb050 transistor+7in4728amosfet smd w04sn30sc4smd diode code gs1mw01 smd mosfetw04 sot 231s355
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diode cross reference
Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Contextual Info: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS
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diode cross referencein5408 equivalentdiotec electronicsin5408 diode+61n4008pbl302rgp20 17 diode rectifier1n4000 1n4004 1n4002rp602pbp205
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BYD74G
Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
Contextual Info: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any
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5ka105ka10a5ka115ka11a+165ka125ka12a5ka135ka13a5ka155ka15abyd74gfur460diode tfk18db6adiode cross referencefagor sm6t33cabzy97ctfk 2401smzg06gpd4sb80z
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BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction
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bap1321-02bap65-05bap65-03bap65-05w+16bap65-02bap63-03bap63-02bap64-03bap64-02bb143bc548 transistor replacementtyn612 pin diagram1n4007 smd, toshibas0817mhtyn604 scr pin diagramkmz51 compasstransistor s1a 64 smdtoshiba l 300 laptop motherboard circuit diagramjfet transistor replacement guide j201replacements for transistor nec d 587
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GI1101
Abstract: GI1104 DO-204AP GI1102 GI1103
Contextual Info: GI1101 THRU GI1104 Glass Passivated Ultrafast Rectifier Reverse Voltage 50 to 200 V Forward Current 2.5 A DO-204AP Features • • • • • • High temperature metallurgically bonded construction Glass passivated cavity-free junction Superfast recovery time for high efficiency
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MUR1560 equivalent
Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in
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mbrd835lvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605mur1560 equivalent1n4004 smas1a sod 88s1a marking code sod 881n5189ss33 smadiode marking us1jdiode 6a106tq035usd745c equivalent
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1n5822 trr
Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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mbrd1035ctlvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe6051n5822 trra14f diodefr105 diodemr850diode a14abyv27 200 taplt2a02mbr3100 06301n4007 sod-123ses50
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OZ 9983
Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —
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mbrb3030ctlvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605oz 9983mbr3045pt transistor940 629 motorola 220motorola marking code k 652 to-220mur3030transistor bc 456diode marking 1n4007 motorola1n2069a14f diodebyv33-45
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Diode 1N4007 DO-7 Rectifier Diode
Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced
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mbrm120et3vhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605diode 1n4007 do-7 rectifier diodefe8dmarking bcvba157* diodemur160 smadiode rgp10gmbrd360cathode top 1n56191n2069mur120 equivalent diode
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GI1101
Abstract: GI1104
Contextual Info: GI1101 THRU GI1104 GLASS PASSIVATED FAST EFFICIENT RECTIFIER Voltage - 50 to 200 Volts Current -2 .5 Amperes FEATURES ♦ ♦ ♦ ♦ Glass passivated cavity-free junction Superfast recovery times-epitaxial construction Low forward voltage, high current capability
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CAT7105CA
Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A
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5ce120c5ke120ca5ce120ca5ce12a+145ke12a5ce12c5ke12ca5ce12cacat7105camp1410esg547e2g547h2g547f2p5504edg equivalentg547i1sp8k10sp8k10sfd5tbld1117al
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GI1101
Abstract: GI1104 DO-204AP GI1102 GI1103
Contextual Info: GI1101 THRU GI1104 GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts * FEATURES ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Superfast recovery time for high efficiency ♦ Low forward voltage, high current capability
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shindengen mr5060
Abstract: TFK 601 TFK 602 18db6a 18DB8A 18DB2A Philips BZV85C-22 data sheet bzx85c MOTOROLA BYD74G UR1M
Contextual Info: Cross Reference Competitor Part Number Competitor FAGOR Part Number Competitor Part Number Competitor FAGOR Part Number 1.5KA10 1.5KA10A 1.5KA11 1.5KA11A 1.5KA12 1.5KA12A 1.5KA13 1.5KA13A 1.5KA15 1.5KA15A 1.5KA16 1.5KA16A 1.5KA18 1.5KA18A 1.5KA20 1.5KA20A
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5ka105ka10a5ka115ka11a+165ka125ka12a5ka135ka13a5ka155ka15ashindengen mr5060tfk 601tfk 60218db6a18db8a18db2aphilips bzv85c-22 data sheetbzx85c motorolabyd74gur1m
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MDA2501
Abstract: pbl302 g1756 g1756 Diode MDA2502 MDA970A6 MDA3510 MDA2500 MDA3502 Bridge rectifier mda970a1
Contextual Info: DIOTEC ELECTRONICS CORP SflE D • Sfl^lG? ÜDOOlfl^ bTT WÊDIX Appendix IV: Cross Reference Tables <x^o\ _oZ_ SCHOTTKY BARRIER DIODES: INDUSTRY PART NO. 1N5817 1N5818 1N5819 1N5820 1N5821 1N5822 1N5823 1N5824 1N5825 MBR1035 MBR1045 MBR1050 MBR1060 MBR1090
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1n58171n56181n58181n5819+121n58201n5821mda2501pbl302g1756g1756 diodemda2502mda970a6mda3510mda2500mda3502 bridge rectifiermda970a1
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GI1101
Abstract: GI1104 DO-204AP GI1102 GI1103
Contextual Info: GI1101 to GI1104 VISHAY Vishay Semiconductors Ultrafast Sinterglass Rectifier Features • High temperature metallurgically bonded construction • Glass passivated cavity-free junction • Superfast recovery time for high efficiency • Ultrafast recovery time for high efficiency
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CTX12S
Abstract: CTX12SL CTX-12SL CTB34M FMPG3F BYV10-40 equivalent BAT42 equivalent STPS3045CW Equivalent BYV42-200 CTL22S
Contextual Info: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST SMBYW01-200 16CPF20 BYW99W-200 10BF100 STTA112U 16CTQ100 STPS20H100CT 10BF20 SMBYW01-200 16CTQ100S 10BF40
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smbyw01-20016cpf20byw99w-20010bf100+15stta112u16ctq100stps20h100ct10bf2016ctq100sctx12sctx12slctx-12slctb34mfmpg3fbyv10-40 equivalentbat42 equivalentstps3045cw equivalentbyv42-200ctl22s
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CTX12S
Abstract: CTX12SL BYV255-200 W210PIV400 SCHOTTKY BARRIER RECTIFIER 40A 15V MBR4015LWT smd schottky diode A2 SOD-123 BYV10-40 PSpice W210PIV-400 shottky barrier diode 100V 100A BYV52-200 equivalent
Contextual Info: STMicroelectronics The world’s third largest microchip manufacturer. RECTIFIERS Designers Selection Guide USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
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sgrect/0802ctx12sctx12slbyv255-200+7w210piv400schottky barrier rectifier 40a 15v mbr4015lwtsmd schottky diode a2 sod-123byv10-40 pspicew210piv-400shottky barrier diode 100v 100abyv52-200 equivalent
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TO263AA
Abstract: SMA UF4007 FEP16BT us1m minimelf FEP30DP DO-214AC schottky es1d FEP30GP FEP16GT center tap diodes 100V 15 A FEP16HT
Contextual Info: FAST EFFICIENT RECTIFIERS 1.0 AMPERE TO 30.0 AMPERES INTRODUCTION TO FAST EFFICIENT RECTIFIERS General Semiconductor’s Fast Efficient Rectifiers FER are a natural extension of our Schottky product portfolio. This is accomplished by offering very fast reverse recovery times (as low as 15 nanoseconds) and voltage levels as high as
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vb32-50byvb32-200o-263abug30apt+16ug30dpto-247adfep30apfep30jpo-247agi2401to263aasma uf4007fep16btus1m minimelffep30dpdo-214ac schottky es1dfep30gpfep16gtcenter tap diodes 100v 15 afep16ht
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GI1101
Abstract: GI1103 GI1104 DO-204AP GI1102
Contextual Info: GI1101 THRU GI1104 GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts * FEATURES ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Superfast recovery time for high efficiency ♦ Low forward voltage, high current capability
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1N5498
Abstract: CA542 AP6KE91A CGJ-1 DF06S 214 H AG 48 2KBP10M I1404 P6KE200 602 CA-592 BZWO4P
Contextual Info: NUMERICAL INDEX 1.5KA6.8.A .564 1.5KE22C.CA. 592 1.5KE170.A. 592 1N4383GP. 1.5KA7.5.A.564 1.5KE24.A.592 1ÆKE170C.CA.592 1N4384GP.244
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5ka105ka115ka125ka13+165ka155ka165ka185ka205ka225ka241n5498ca542ap6ke91acgj-1df06s 214 hag 48 2kbp10mi1404p6ke200 602ca-592bzwo4p
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stpr16
Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •
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murb1620ctvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605stpr16mur480e340l-02pk mur 460bv 202 01581n541ak sot23stps2045ss33 smba14f diode
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b2545 transistor
Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection
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mbr2535ctmbr2545ctb2535b2545+14vhe205vhe210vhe215vhe220vhe2401b2545 transistorto220 mur460byv43-45mur 460 0801mr756rlmur420 diodeequivalent transistor b25356a10 bl diodediode a14a surface
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MR2835S equivalent
Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected
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mbr6045ptvhe205vhe210vhe215+16vhe220vhe2401vhe2402vhe2403vhe2404vhe605mr2835s equivalenta14f diode1n5404 diodefe16amur860 equivalentmur1620ctmur420 diodeusd745c equivalentmbrd360pr1502
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GI1101
Abstract: GI1104
Contextual Info: GI1101 to GI1104 VISHAY Vishay Semiconductors Ultrafast Sinterglass Rectifier Features • High temperature metallurgically bonded construction • Glass passivated cavity-free junction • Superfast recovery time for high efficiency • Ultrafast recovery time for high efficiency
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