GI1104 Search Results

GI1101

Abstract: GI1104 DO-204AP GI1102 GI1103
Contextual Info: GI1101 THRU GI1104 Glass Passivated Ultrafast Rectifier Reverse Voltage 50 to 200 V Forward Current 2.5 A DO-204AP Features • • • • • • High temperature metallurgically bonded construction Glass passivated cavity-free junction Superfast recovery time for high efficiency

SOD-57

Abstract: GI1104
Contextual Info: GI1104 SINTERED GLASS JUNCTION FAST EFFICIENT RECTIFIER VOLTAGE： ：200V CURRENT: 2.0A FEATURE SOD-57 Glass passivated Superfast recovery time for high efficiency Low forward voltage, high current capability Low leakage High surge capability MECHANICAL DATA

GI1101

Abstract: GI1104
Contextual Info: GI1101 THRU GI1104 GLASS PASSIVATED FAST EFFICIENT RECTIFIER Voltage - 50 to 200 Volts Current -2 .5 Amperes FEATURES ♦ ♦ ♦ ♦ Glass passivated cavity-free junction Superfast recovery times-epitaxial construction Low forward voltage, high current capability

GI1101

Abstract: GI1104 DO-204AP GI1102 GI1103
Contextual Info: GI1101 THRU GI1104 GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts * FEATURES ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Superfast recovery time for high efficiency ♦ Low forward voltage, high current capability

GI1101

Abstract: GI1104
Contextual Info: GI1101 THRU GI1104 GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 2.5 Amperes _FEATURES_ 00-2Q4AP ♦ ♦ ♦ ♦ ♦ & 1 0 <25 4 MIN ♦ ♦ ♦ ♦ High temperature metallurgically bonded construction

GI1101

Abstract: GI1104 DO-204AP GI1102 GI1103
Contextual Info: GI1101 to GI1104 VISHAY Vishay Semiconductors Ultrafast Sinterglass Rectifier Features • High temperature metallurgically bonded construction • Glass passivated cavity-free junction • Superfast recovery time for high efficiency • Ultrafast recovery time for high efficiency

GI1101

Abstract: GI1103 GI1104 DO-204AP GI1102
Contextual Info: GI1101 THRU GI1104 GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts * FEATURES ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Superfast recovery time for high efficiency ♦ Low forward voltage, high current capability

GI1101

Abstract: GI1104
Contextual Info: GI1101 to GI1104 VISHAY Vishay Semiconductors Ultrafast Sinterglass Rectifier Features • High temperature metallurgically bonded construction • Glass passivated cavity-free junction • Superfast recovery time for high efficiency • Ultrafast recovery time for high efficiency

Contextual Info: GI1101 THRU GI1104 GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current -2 .5 Amperes FEATURES DO-2Q4AP ♦ ♦ ♦ ♦ ♦ ,< ? J 0.034 0.86 0 .0 2 8 (0 .7 1 ) 1.0 (25.4) DIA. MIN. I I ♦ ♦ ♦ ♦ 0.2400 (6 0.24

GI1101

Contextual Info: GI1101 THRU GI1104 GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 2.5 Amperes _ FEATURES_ PQ:204AP ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ High temperature metallurgicaily bonded construction

Contextual Info: Ultra Fast Sinterglass Rectifiers Part No. CrossReference GI1104 - SF5400 SF5401 SF5402 SF5403 SF5404 SF5405 SF5406 SF5407 SF5408 BYW178 - Max. Average Rectified Current Operating Temperature: -65o C to 150o C Peak Fwd. Surge Peak Inverse Current @ 8.3 ms

GI1101

Abstract: GI1104 DO-204AP GI1102 GI1103
Contextual Info: GI1101 thru GI1104 Vishay Semiconductors formerly General Semiconductor Glass Passivated Ultrafast Rectifier Features DO-204AP • • • • • • High temperature metallurgically bonded construction Glass passivated cavity-free junction Superfast recovery time for high efficiency

GI1101

Abstract: GI1104
Contextual Info: Oli 101 THRU GI1104 GLASS PASSIVATED FAST EPITAXIAL RECTIFIER Voltage - 50 to 200 Volts Current - 2.5 Amperes FEATURES ♦ ♦ ♦ ♦ Glass passivated cavity-free junction Superfast recovery times-epitaxial construction Low forward voltage, high current capability

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

BYD74G

Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
Contextual Info: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any

FUR460

Abstract: GUR460 UF4007 SMD Spice UF5408 MUR Motorola fast diode UF5400 "spice model" uf5408 SMD diode SMA UF4007 GENERAL SEMICONDUCTOR SMD DIODES mur 460 data
Contextual Info: N E GUR440 & GUR460 MUR440 & MUR460 Ultrafast Axial-Leaded Rectifiers W P R O New Four Ampere Axial Introduction GUR460 Features Cross Reference GUR460 Applications Ultrafast Recovery FER Selector Chart Spice Model Parameters D U To view the datasheets please click here ➔

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

byv260

Abstract: W10G MBRB1060 SBLB2030CT SBLB2040CT ug2d 1N8478 KBU8M 514
Contextual Info: NUMERICAL INDEX 1.5KA6.8 thru 1.5KA43A.614 BYM12-50 thru BYM12-400 .77 FES8AT thru FES8JT . 149 1.5KE6.8 thru 1.5KE440CA.564 BYM13-20 thru BYM13-60 .355 BYV260 and BYV26E. 75

g1758

Abstract: BYV27-200 byw32-200 G30D GP25M
Contextual Info: v G eneral S e m ic o n d u c t o r DEVICE NUMERICAL INDEX PAGE DEVICE PAGE DEVICE PAGE 1.5KA6.8 thru 1.5KA43, A . 52 BA157GP thru B A 1 5 9 G P . 18 EGL34A thru EGL34G . 28 1.5KE6.8 thru 1.5KE440, A, CA . 53

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A