GENERAL SEMICONDUCTOR MARKING RB Search Results

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

smd code marking QFN-4

Contextual Info: Application Specific Solution from ON Semiconductor NCP1840 8-Channel Programmable LED Driver MARKING DIAGRAM The NCP1840 is a highly integrated general purpose LED driver with the ability to drive up to eight LEDs. A high efficiency, low noise, quad mode charge pump allows the

2N3053 NPN transistor

Abstract: 2n3053 SILICON TRANSISTOR 2N3053 transistor 2n3053 2n3053 transistor 2N3053A NPN Transistor 2n3053 2N3053 NPN transistor hfe
Contextual Info: 2N3053 2N3053A NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3053, 2N3053A types are epitaxial planar NPN silicon transistors designed for general purpose applications. MARKING: FULL PART NUMBER TO-39 CASE

Contextual Info: 2N3053 2N3053A SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3053, 2N3053A types are epitaxial planar NPN silicon transistors designed for general purpose applications. MARKING: FULL PART NUMBER TO-39 CASE

2N2270

Contextual Info: 2N2270 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2270 is a NPN silicon transistor, mounted in a hermetically sealed package, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER

Contextual Info: 2N2221A 2N2222A SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A and 2N2222A are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER

Contextual Info: 2N2221A 2N2222A SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A and 2N2222A are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER

2N1893

Contextual Info: 2N1893 w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N1893 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications. MARKING: FULL PART NUMBER TO-39 CASE

Contextual Info: 2N2405 w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2405 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications. MARKING: FULL PART NUMBER TO-39 CASE

CW-75

Abstract: 2N2222A marking code 2N2222A marking
Contextual Info: 2N2221A 2N2222A NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A and 2N2222A types are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER

Contextual Info: 2N1613 w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N1613 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications. MARKING: FULL PART NUMBER TO-39 CASE

Contextual Info: 2N1711 w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N1711 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications. MARKING: FULL PART NUMBER TO-39 CASE

2N4410

Abstract: 2N4410 Transistor Transistor marking code S
Contextual Info: 2N4410 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4410 is a small signal NPN silicon transistor, manufactured by the epitaxial planar process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER

power transistor 2n3020

Abstract: 2N3019 and applications
Contextual Info: 2N3019 2N3020 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3019, 2N3020 types are NPN silicon transistors designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: TA=25°C

Contextual Info: 2N3700 2N3701 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3700 and 2N3701 are silicon NPN transistors designed for high current general purpose applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: TA=25°C unless otherwise noted

1403

Abstract: R20 marking MMBD1401 MMBD1404 MMBD1405 UMBD1403 M3325
Contextual Info: MMBD1401 /1403 /1404 /1405 Discrete POWER & Signal Technologies Na t i o n a l Semiconductor & M M B D 1 401 / 1 4 0 3 7 1 4 0 4 / 1 4 0 5 JH 29 m et MARKING MMBD1401 29 MMBD1404 33 MMBD1403 32 MMBD1405 34 SOT-23 High Voltage General Purpose Diode Sourced from Process 1H.

BC638

Abstract: BC638TA transistor bc638 BC637 BC638BU BC638TF BC638TFR Transistor Marking C3
Contextual Info: BC638 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC637 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter Value Units -60 V VCER Collector-Emitter Voltage at RBE=1KΩ

BC636

Abstract: Transistor Marking C3 BC636TFR BC635 BC636BU BC636TA BC636TAR BC636TF transistor bc635
Contextual Info: BC636 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC635 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter Value Units -45 V VCER Collector-Emitter Voltage at RBE=1KΩ

bc640

Abstract: transistor bc640 transistor c 458 BC640BU BC639 BC640TA BC640TAR BC640TF BC640TFR applications of Transistor BC640
Contextual Info: BC640 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC639 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter Value Units V VCER Collector-Emitter Voltage at RBE=1KΩ

Contextual Info: RB551V-30 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Low Turn-On Voltage   Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability

diode d2e

Contextual Info: RB491D SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Low Forward Voltage   Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability

Contextual Info: RB548W SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Low Forward Voltage   Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability

Contextual Info: RB461F SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Low Forward Voltage   Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability