GDLB Search Results

GDLB

Contextual Info: 6 4 5 A P PRO VE D : _ DATE: _ TITLE: D 0,125 [03,2] T^ 57 ID: 0 , 0 6 7 [01, 7] [4, 0] □D 0.10 6_ [02,7] -35 8 NUT 7 RETAINING 6 [9,0]- BRASS GDLB 1 BRASS GELD 1 FERRULE BRASS GELD 1 5 RERRULE BRASS GDLB 1 4 DIELECTIG

2SA1072

Abstract: 2SA1073 VERO dc-dc power 25CC 2SA1072A 2SA107
Contextual Info: FUJITSU MICROELECTRONICS 31E D E3 374=]7b2 GDlbSOfl □ E1FMI T- 3 3 - 2 . 3 January 1990 Edition 1.1 _ P R O D U C T P R O FILE Fujfrsu 2SA1072, 2SA1072A, 2SA1073 Silicon High Speed Power Transistor DESCRIPTION The 2SA1072/2SA1072A/2SA1073 are silicon PNP general purpose, high power

E78996 rectifier module

Abstract: powerdiod
Contextual Info: a • international SR ectifier MÔ5545E GDlbS? 7*13 « I N R international rectifier ^se» s e rie s B40HFL/H2L FAST RECOVERY DIODES Power Modules in B-package Features ■ ■ ■ ■ 40A Fast recovery time characteristics Electrically isolated base plate

FDS 4800

Abstract: modem v.32
Contextual Info: • 70 110 73 GDlbbTS n o BRKU RC144DP-LL Rockwell RC144DP-LL V.33/V.32 bis 14400 bps Leased Line Modem INTRODUCTION FEATURES The Rockwell RC144DP-LLsingle-device modem is a high speed, full-duplex, synchronous/asynchronous, modem data pump. The modem satisfies the requirements speci­

E78996 scr

Abstract: p402w
Contextual Info: • International Ek>r]Rectifier 4Ô5S4SE GDlbS3T 'ÎÔT ■ INR INTERNATIONAL RECTIFIER bSE » SERIES P400 PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features ■ Glass passivated junctions for greater reliability ■ Electrically isolated base plate ■ Available up to 1200 V RRM, V DRM

TPS805

Abstract: TLN115
Contextual Info: 9097250 TO SH IBA D I S C R E T E / OPTO 90D TOSHIBA -CDISCRETE/OPTQ} ^ 16503 D Î>Ë( TDT72SQ GDlb5Q3 4 W ~ Detector (Photo Diode) Characteristic (Ta = 25°C) Classification Type No. Status Outline Package 'S C IM ) jí ä TPS708 QU> •6- »crUTI; Metal

2SK44

Abstract: AA 16392
Contextual Info: TOSHIBA ÍD IS CR ET E/O PTOJ DE I TGTYESG GDlb3flfl fl TO 9097250 TOSHIBA DISCRETE/OPTO ¿/o ÌÌÌìIh 2 M M M SEMICONDUCTOR 90D 16388 DT-37-/3 S K 4 4 7 ' 3 9 - j? 7 G 1 5 D 4 G M 1 G 1 5 D 4 H M 1 (250V/15A) G 1 5 D 6 E M 1 TECHNICAL DAÎA OUT LINE Unit in mm

Contextual Info: 0 L -M A 1 -M F T S -0 0 2 PART NUMBER MA1-MFTS-002 ICO NO. DCSCWPTTON UR A CDM PDNENT CDNTACT AND FEMALE HDUSINGi an DATE INITIAL RELEASE M A TE R IA L FIN ISH BeCu PER ASTM B 196 AND/DR ASTM B 197 AND UNS »C17300 DR UNS #C172000 GDLB PLATE PER ASTM B 488, TYPE 1,

Contextual Info: OSHIBA LASER/FBR OPTIC Dl D • ‘ÌG'ÌTSSE GDlblEb b « T O S b 1^41-07 TOSHIBA FOR OPTICAL COMMUHICATIONS Compact Laser Modules T0LD321 T0LD323 T0LD321/323 Applications Features •Light source for optical subscriber loops and optical LAN. •Light source for optical measurement

ADC700 equivalent

Abstract: SHC76
Contextual Info: B UR R- BR OUN CORP SSE D • l?313bS GDlbfi“^ 1 ■ r - s ! -1 0 -1 6 B U R R -B R O W N 1 M M ADC700 I 16-Bit Resolution With Microprocessor Interface A/D CONVERTER The reference circuit, containing a buried zener, is laser-trimmed for minimum temperature coefficient.

Contextual Info: S A M S UN G E L E C T R O N I C S INC b7E D 7 ^ 4 1 4 2 GDlbSDM 21^ KM28C256 CMOS EEPROM 32K x 8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C256: Commercial — KM28C256I: Industrial • Simple Byte Write & Page Write

RS-397

Abstract: 10RIF10W 16RIF10W 16RIF60
Contextual Info: INTERNATIONAL RECTIFIER HÖ55452 GDlBMS'i O IS • INR STE D X /O fc L Data Sheet No. PD-3.176A OCT 0 3 1990 IN T E R N A T IO N A L R E C T IF IE R 10RIF/1GRIF, 20RIF SERIES IBA jSSA ^SA RMS Medium Power Fast: Turn-off Thyristors Major Ratings and Characteristics

Contextual Info: TOSHIBA {DISCRETE/OPTO}- TT 9097250 TOSHIBA CDISCRETE/OPTO TOSHIBA dF | t O T 75SG GDlbTSS T TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 99D 1 6 7 5 5 2 S IC 7 9 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA 7T-M0SI) T “ 3 <? “ I• •INDUSTRIAL APPLICATIONS

BZX75C1V4

Abstract: BZX75-C2V1 BZX75-C1V4 BZX75C BZX75-G3V6 c2v1 BZX75/C1V4 BZX75-C2V8 BZX75-C3V6 BZX75C2V1
Contextual Info: 2SE D N AMER PHILIPS/DISCRETE • bbS3T31 GDlbTbl ^ ■ BZX75 S E R IE S r-u-za ST A B IST O R S Diodes with controlled conductance in a a ll-g lass DO-7 regulation in circuits for clipping, coupling, clamping, and in many applications which require tight tolerances

Contextual Info: SAMSUNG ELECTRONICS INC b7E D KM416C1OOOL/LL • 7Tb4].4S GDlb3b5 134 CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1000L/LL is a CMOS high speed 1,048,576 b itx 16 Dynamic Random Access Memory.

Contextual Info: •I 7011073 GDlbbB'ì 3bl ■ RKÜJ R144EFXL MONOFAX Modems * Rockwell R144EFXL Low Power 14400 bps MONOFAX Modem INTRODUCTION FEATURES The Rockwell R144EFXL MONOFAX modem is a syn­ chronous 14400 bits per second bps half-duplex modem with error detection and DTMF reception. It has low power

Toshiba Laser Diodes

Contextual Info: TOSHIBA ÌLASER/FBR O P T I O 01 DE | TO'ÌTESS GDlblD? 2 | .'" V S - O S * TOSHIBA LASER DIODES FOR OPTICAL INFORMATION PROCESSINGS Standard type Standard type can be used in w ide range of application. Three package types are the 9m m -diam eter round flange,

Contextual Info: TOSHIBA -CDISCRETE/OPTOJ- TT 9097250 TOSHIBA DISCRETE/OPTO DE | l [ H 7 E S G GDlbflbD 990 16860 D TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR i T F.6 2 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (ff-MOSI) INDUSTRIAL APPLICATIONS Unit in nun HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: TOSHIBA { D I SC RE TE /OPT O} *TG 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR dFI^CHTESO GDlbiao Q 90D 16120 D T - 33-/3 TOSHIBA GTR MODULE MG25H1BS1 TECHNICAL DATA SILICON N-CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

Contextual Info: liso 10 353c R REV 11 ft S S MODIFICATION 12 5fc DRAWN M Hi APPROVED EN0602Û2 B NOTES ! 1,M ATERIAL i IN SULATO R i PA46+3Û %G/F CONTACT : PHOSPHOR BRONZE 2 .P R A T NO: S C S 0 6 S —XÛ—3100 PLATING! 0, GDLB FLASH OVER Ni, 3. 15u'GDLE PLATE]] OVER Ni.

laser diode toshiba

Abstract: p04m laser diode head Toshiba Laser Diodes
Contextual Info: 0SHI B A LASER/FBR OPTIC Gl D • ^D^7BS2 D G lbl22 1 «TOSti D v TOSHIBA FOR OPTICAL COMMUNICATIONS jSgJpw^BPWgy«11 ' M DFB Laser Diode ä - ' - ' ' T O r ■- - ' •'••*“ “• ' " ' ' Optical Communications Ia tf1* . «f r w k <■>',.■j. ».,.¿Vw rru »J n . . ¡m

Contextual Info: SILICONIX INC 33E I • S2S*|73S 0011=81.3 T ■ .ffSgSfiS T 51 -" DG421/423/425 Low-Power - High-Speed Latchable CMOS Analog Switches FEATURES BENEFITS • Latched Inputs • ± 1 5 Volt Input Range • On-Reslstance < 3 5 Cl • • • • Fast Switching Action t0 N <250 ns •

KM428C257

Abstract: XAL W6 MAS 10 RCD sc 4145 CNR 14 V 471 K CA278 CI008 On Screen Display Samsung
Contextual Info: SA M S U N G E L E C T R O N I C S INC b7E D m 7^4142 001L>bb2 17Û SMGK PRELIMINARY KM428C257 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION - Dual port Architecture 2 56 K x 8 bits RAM port 512 x 8 bits SAM port The Sam sung KM 428C 257 is a C M OS 256K x 8 bit Dual

Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FO R ALL BY TYCO C O P Y R IG H T E L E C T R O N IC S 2 P U B L IC A T IO N R IG H T S R E V IS IO N S RESERVED. G C O R P O R A T IO N . 0: LTR H D E S C R IP T IO N REV PER ECR DATE 07-017037 DWN