BZX75 Search Results

BZ102 diode

Abstract: TRANSISTOR C 6090 BZX75C1V4 BZ102 BZX75C2V1 DIODE BZX75c3v6 BZX75C3V6 1N816 BZX75C-1V4 BZX75-C1V4
Contextual Info: AMERICAN POWER DEVICES SRE ». • 1N816 ,1 N3896, AP3897 - AP3898 AP4829 - AP4830, BZ102/0V7 - BZ102/3V4 BZX75C1V4 - BZX75C3V6, G129 - G130 STB-567 - STB-569, AP2360 - AP2361 american SEM ICO N D U C TO R S D73713S QQODOb? SSS ■ APD power devices, inc.

Contextual Info: BZX75C2V1 Diodes Forward Reference Diode If Max A I(FSM) Max.(A) Pk.Fwd.Sur.Cur.250m V(FM) Max.(V) Forward Voltage2.05 @I(FM) (A) (Test Condition)1.0m I(RM) Max.(A) Reverse Current500n @V(R) (V)(Test Condition)5.0 Semiconductor MaterialSilicon Package StyleDO-7

bzx75c2v8

Abstract: BZX75C3V6
Contextual Info: 2SE D N AMER PHILIPS/DISCRETE • bb53T31 OOlbTbl =| ■ BZX75 SERIES STABISTORS Diodes with controlled conductance in a a ll-g la ss DO-7 regulation in circuits for clipping, coupling, clamping, and in many applications which require tight tolerances The se r ie s consists of 4 types with nominal voltages

BZX75C1V4

Abstract: BZX75-C2V1 BZX75-C1V4 BZX75C BZX75-G3V6 c2v1 BZX75/C1V4 BZX75-C2V8 BZX75-C3V6 BZX75C2V1
Contextual Info: 2SE D N AMER PHILIPS/DISCRETE • bbS3T31 GDlbTbl ^ ■ BZX75 S E R IE S r-u-za ST A B IST O R S Diodes with controlled conductance in a a ll-g lass DO-7 regulation in circuits for clipping, coupling, clamping, and in many applications which require tight tolerances

TDA8178FS

Abstract: BZX75C2V1 circuit integre resistencia zener 0.25W BZX75-C2V1 STV9379F Alla STV9379 BZX75C
Contextual Info: REPLACEMENT OF IC TDA8178FS CHASSIS : ICC7/ICC8 Eng. * remove IF01 and replace it with a STV9379F integrated ciruit. * Solder a 3.9KΩ 0.25W 5% Resistor between pins 2 and 7 of IF01. * Solder a Zener Diode BZX75C2V1 with anode at pin 7 of IF01 and cathode at the ground.

BZX75C2V1

Abstract: BZX75C1V4 1N3896 BZ102 BZX75-C3V6 BZX75C2V8 BZX75C 1N816 bzx75c3v6 STB568
Contextual Info: STABISTORS Part# 1N 8 16 1N3896 1N3897 1N3898 1N4829 1N4830 BZ102/0V7 BZ102/1V4 BZ102/2V1 BZ102/2V8 BZ102/3V4 BZX75C1V4 BZX75C2V1 BZX75C2V8 BZX75C3V6 Voltage Tolerance M a x . Leakage Current Test Current v„W 5% ±V l„«10V(m A) Mm») .704 .775 1.500

Siemens ofw g 1956

Abstract: Siemens ofw OFW G 1956 automatic voltage stabilizer BZX75C ofwg1956 TDA3842 amplifier if 38,9 MHz diagram tv Philips 14 IF VIDEO DEMODULATOR
Contextual Info: Philips Components Data sheet status Preliminary specification date of issue September 1990 FEATURES • Low supply voltage range, from 5.0 V to 8.0 V • Low pow er dissipation, 200 m W at 5V • High supply ripple rejection • W ide IF bandw idth o f 80 MHz

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

BZX75C2V8

Abstract: 1N816 BZX75C2V1 bzx75c1v4 AP4157 BZX75-C2V1 STB568 AP4830 BZX75-C2V8 G129 stabistor
Contextual Info: ÖB FENUAL ELECTRONICS/APD 3Ef 3 S m S t B I ' r- ODD DT 2-1 1 il- * 1 STABISTORS DO-35 Case DO-35 Case Type 1N816 1N3896 AP3897 AP3898 AP4829 Stabistors are diffused silicon diodes with controlled forward voltage charac­ teristics. They are offered with reference

Diode KD 514

Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Contextual Info: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381

1N48 diode

Abstract: 1N4156 BZX75C1V4 BZX75C3V6 BZX75-C2V1 BZX75C-1V4 BZ102 diode 1N48 MPD200 1N816
Contextual Info: AMERICAN POWER 0737135 D DEVICES american SEMICONDUCTORS p o w e r devices, 4 .T «APD 1N4156,1N4157 1N4829,1N4830 1N5179 MPD200, MPD300, MPD400 inc. Stabistor diodes — high speed, multi-pellet, ultra low leakage FEATURES MAXIMUM RATINGS • • • •

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

cp4071

Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

PA0016

Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
Contextual Info: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

TELEVISION EHT TRANSFORMERS

Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
Contextual Info: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any