stk 490 110
Abstract: stk 490 310 stk 490 070 4830A k4013 Transistor y2n stk 490 040 stk*470 090 stk 470 070 STK 290 010
Contextual Info: Ordering number : EN4830A Thick Film Hybrid 1C No.4830A S TK 400-020 3-Channel AF Power Amplifier Split Power Supply ( 1 5 W + 1 5 W + 1 5 W min, THD = 0.4 %) Overview Package Dimensions Now, thick-film audio power amplifier ICs are available with pin-com patibility to permit a single PCB to be
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en4830astk400-0200cllb57flstk 490 110+9stk 490 310stk 490 0704830ak4013transistor y2nstk 490 040stk*470 090stk 470 070stk 290 010
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Contextual Info: Preliminary Data Sheet July 1995 m A T& T Microelectronics DSP1605 Digital Signal Processor 1 Features 2 Description • For 5 V operation: — 25 ns instruction cycle time 40 MIPS — 30 ns instruction cycle time (33 MIPS) ■ For 3.3 V operation: — 31.25 ns instruction cycle time (32 MIPS)
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dsp160516-bit36-bit005002b+1001bb5b
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Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7TL,4m2 DDlbSSb TT3 « S M C K KM424C257 CMOS VIDEO RAM 256K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port * Perform ance The Samsung K M 4 2 4 C 2 5 7 is a CMOS 2 5 6 K X 4 bit Dual
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km424c257110ns130ns150ns+128-pin
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intel 4040
Abstract: DSP1605 5-4001 DB3C intel 4008 te 4017 tl 4013 540T2 motorola XT 1606 RM RSTB14
Contextual Info: Preliminary Data Sheet July 1995 £ 3 A TgT Microelectronics DSP1605 Digital Signal Processor • 1 Features 2 Description ■ For 5 V operation: — 25 ns instruction cycle time 40 MIPS — 30 ns instruction cycle time (33 MIPS) ■ For 3.3 V operation:
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16-bit36-bitintel 4040dsp1605+85-4001db3cintel 4008te 4017tl 4013540t2motorola xt 1606 rmrstb14
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DIGITAL GATE EMULATOR USING 8085
Abstract: 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent
Contextual Info: Library Characteristics il A M I AMERICAN MICROSYSTEMS, INC. L ib ra ry Characteristics AMI6G 0.6 micron CMOS Gate Array AMI6Gx Gate Array Family Overview U S A B LE G ATES1 PART NUM B ER2 B O N D PAD S I/O C E L L S 2 LM 3 LM AMI6G4 1.39 1.85 44 52 AMI6G16S
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ami6g16sami6g33sami6g41sami6g70s+16ami6g106sami6g150sami6g202sami6g333ami6g471ami6g603digital gate emulator using 80858086 microprocessor book by a k ray180 nm cmos standard cell library amiic1732dl021m91c360ami 0.6 micron3682dami equivalent gatesic/tda7388 equivalent
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lh64256
Abstract: LH64256BD70 CMOS Dynamic RAM 1M x 1
Contextual Info: LH64256B CMOS 1M 256K x 4 Dynamic RAM FUNCTION DESCRIPTION • 262,144 words x 4 bit The LH64256B is a 262,144 word x 4-bit dynamic RAM which allows fast page mode access. The LH64256B is fabricated on SHARP’S advanced CMOS double-level polysilicon gate technology. With its input
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lh64256b20-pin300-mil26-pin+5400-mil20zip-2lh64256lh64256bd70cmos dynamic ram 1m x 1
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2SD1872
Abstract: darlington complementary 120v 2SB1252
Contextual Info: Power T ransistors 2SB1252 2SB1252 Silicon PNP Epitaxial Planar Darlington Type Package Dimensions Power Amplifier Complementary Pair with 2SD1872 • Features U n it : i 4.4 max. 10 .2 m ax. 5.7max. 2 .9 m a x . • O p tim u m fo r 35W hi-fi o u tp u t
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2sb12522sd1872001b27darlington complementary 120v |
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