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    FQ TRANSISTOR Search Results

    FQ TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-2
    Rochester Electronics LLC Avionics LDMOS transistor PDF Buy
    RX1214B300YI
    Rochester Electronics LLC RX1214B300Y - Microwave Power Transistor PDF Buy
    CA3127MZ
    Rochester Electronics LLC CA3127 - Transistor Array PDF Buy
    RX1214B130YI
    Rochester Electronics LLC NPN microwave power transistor PDF Buy
    MX0912B251Y
    Rochester Electronics LLC NPN microwave power transistor PDF Buy

    FQ TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L2SA1774QT1G Series z We declare that the material of product compliance with RoHS requirements. z DEVICE MARKING AND ORDERING INFORMATION Marking Shipping L2SA1774QT1G FQ 3000/Tape&Reel L2SA1774QT3G


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    L2SA1774QT1G 3000/Tape L2SA1774QT3G 10000/Tape L2SA1774RT1G L2SA1774RT3G L2SA1774ST1G PDF

    Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon z We declare that the material of product compliance with RoHS requirements. L2SA1774QLTIG Series z DEVICE MARKING AND ORDERING INFORMATION 3 Marking Shipping L2SA1774QLT1G FQ 3000/Tape&Reel


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    L2SA1774QLTIG L2SA1774QLT1G 3000/Tape 10000/Tape L2SA1774RLT1G SC-89 PDF

    L2SA1774QT1G

    Abstract: SC-89
    Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L2SA1774QT1G Series z We declare that the material of product compliance with RoHS requirements. z DEVICE MARKING AND ORDERING INFORMATION Marking Shipping L2SA1774QT1G FQ 3000/Tape&Reel L2SA1774QT3G


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    L2SA1774QT1G 3000/Tape L2SA1774QT3G 10000/Tape L2SA1774RT1G L2SA1774RT3G L2SA1774ST1G L2SA1774QT1G SC-89 PDF

    AC176

    Abstract: AC184 AC127 AC128 2N2635 AC122 GERMANIUM SMALL SIGNAL TRANSISTORS 2N1377 2N634 OC72 2N1924
    Contextual Info: ~ - - , - - • - 7 .-«. G E R M A N I U M PO W E R D E V I C E S Fq — - - SDE D . - . ■ . _ _£. _ ^ . - _. . - 3T473?5 00Q05Q? 2 ■ GERMANIUM SMALL SIGNAL TRANSISTORS PRO ELECTRON TYPES


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    3T473 00Q05Q? AC107 AC116 AC117 AC121--IV AC121--V AC121--VI AC121--VII AC122 AC176 AC184 AC127 AC128 2N2635 GERMANIUM SMALL SIGNAL TRANSISTORS 2N1377 2N634 OC72 2N1924 PDF

    fq sot-23

    Abstract: marking FQ transistor MARKING 560 pnp sot23 transistor sot23 MARKING 560 2SA1037 R 560 SOT23
    Contextual Info: 2SA1037 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Excellent hFE linearity. — Complments the 2SC2412 MARKING : FQ, FR, FS Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


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    2SA1037 OT-23 OT-23 2SC2412 -50mA 30MHz fq sot-23 marking FQ transistor MARKING 560 pnp sot23 transistor sot23 MARKING 560 2SA1037 R 560 SOT23 PDF

    2SC2412

    Abstract: marking FQ 2SA1037 transistor marking fq
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA1037 SOT-23 TRANSISTOR PNP FEATURES ∙ Excellent hFE linearity. ∙ Complments the 2SC2412 1. BASE 2. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    OT-23 2SA1037 OT-23 2SC2412 -50mA 30MHz 2SC2412 marking FQ 2SA1037 transistor marking fq PDF

    VFC121

    Contextual Info: For Immediate Assistance, Contact Your Local Salesperson Precision Single Power Supply VOLTAGE-TO-FREQUENCY CONVERTER APPLICATIONS FEATURES • INTEGRATING A/D CONVERSION SINGLE SUPPLY OPERATION: +4.5V to +36V fQ= 1.5MHz max LOW NONLINEARITY: 0.03% max at


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    100kHz, 100kH VFC121 VFC121 PDF

    2SA1037AK

    Abstract: 2SC2412K transistor marking fq
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SA1037AK SOT-23-3L TRANSISTOR PNP FEATURES z Excellent hFE linearity. z Complments the 2SC2412K. 1. BASE 2. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    OT-23-3L 2SA1037AK OT-23-3L 2SC2412K. -50mA 30MHz 2SA1037AK 2SC2412K transistor marking fq PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA1037 SOT-23 TRANSISTOR PNP 3 FEATURES ∙ Excellent hFE linearity. ∙ Complments the 2SC2412 1 1. BASE 2 2. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    OT-23 2SA1037 OT-23 2SC2412 PDF

    Contextual Info: 2SA1037AK SOT-23-3L Transistor PNP SOT-23-3L 1. BASE 2.92 2. EMITTER 0.35 3. COLLECTOR 1.17 Features — — 2.80 Excellent hFE linearity. Complments the 2SC2412K. 1.60 0.15 MARKING : FQ, FR, FS 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    2SA1037AK OT-23-3L OT-23-3L 2SC2412K. -50mA 30MHz PDF

    ZTB12-12

    Abstract: ZTB12-12FL ZTB25-12 ZTB25-12FL ZTB3-12 ZTB3-12FL ZTC12-12 ZTC12-12FL ZTC25-12 ZTC3-12
    Contextual Info: RF POWER TRANSISTORS 12 V o lts Supply Type Power Output. Pout Min. watts Power Input (watts) Power Gain Min. (dB) Operating Frequency fQ MHz Package ZTB3-12 3.0 0.3 10.0 175 RF4 ZTB3-12FL 3.0 0.3 10.0 175 RF5 ZTB12-12 12.0 2.5 7.0 175 RF4 ZTB12-12FL 12.0


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    ZTB3-12 ZTB3-12FL ZTB12-12 ZTB12-12FL ZTB25-12 ZTB25-12FL ZTC3-12 ZTC3-12FL ZTC12-12 ZTC12-12FL ZTC25-12 PDF

    VCE05181

    Abstract: Q62702-F1345 cerec Transistor 7s
    Contextual Info: SIEMENS PNP Silicon R F Transistor B FQ 194 Preliminary Data • For low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 G H z at collector currents from 20 mA to 80 mA. • / t = 4.5 G Hz • Complementary type: BFQ 73S NPN .


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    VCE05181 Q62702-F1345 023Sb05 mA100 E35b05 DDb7544 VCE05181 cerec Transistor 7s PDF

    transistor 7B12

    Abstract: transistor 7B05 lm7805 heatsink LM7805 TO263 hb7812 7b24 LM78XXCM LM7805-TO LM7800 LM7818 TO263
    Contextual Info: iJ fQ rnN|M LM7800 Series 3-Terminal Fixed Voltage Regulators THERE- TE RIN AL POSITIVE VOLTAGE REGULATORS ì These voltage regulators are monolithic integrated circuits desighned as fixed-voltage regulators for a wide variety of applications including local, oncard regulation. These regulators employ internal


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    LM7800 120EIz 50CUnA transistor 7B12 transistor 7B05 lm7805 heatsink LM7805 TO263 hb7812 7b24 LM78XXCM LM7805-TO LM7818 TO263 PDF

    BFR64

    Abstract: multi-emitter transistor BFR64 DATA vk200 philips vk200 coil VK-200-10 7Z7Z609 Transistor D 798 BFQ34
    Contextual Info: N AMER PHILIPS/DISCRETE asE d m bb53i3i aoi?ciT? a B FQ 34 is recommended for new design BFR64 T - 3 3 - 0 S - N-P-N H.F. WIDEBAND TRANSISTOR N-P-N m ulti-em itter transistor in a capstan envelope. The transistor has extrem ely good intermodulation properties and high power gain.


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    BFQ34 BFR64 7z72605 BFR64 multi-emitter transistor BFR64 DATA vk200 philips vk200 coil VK-200-10 7Z7Z609 Transistor D 798 PDF

    Contextual Info: N AMER PHILIPS/DISCRETE SSE D BFQ33C is recommended for new design bbS3T31 0017633 0 • BFQ33 T '-3 /-| S ' N-P-N MICROWAVE TRANSISTOR The B FQ is an N-P-N transistor in a miniature hermetically sealed microstripline encapsulation, featuring an extremely high transition frequency of 12 GHz and very low noise.


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    BFQ33C bbS3T31 BFQ33 bbS3T31 T-37-15 7Z89164 PDF

    Contextual Info: 32E D m a 2 3 t.3 2 o o o ib ^ m ? « s ip NPN Silicon RF Transistor 31 ^ 3 .3 B FQ 19P SIEMENS/ SPCLi SEMICONDS _ • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 10 to 70 mA. For new design refer to BFQ 19S


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    BFQ19P OT-89 100fflA PDF

    VFC121

    Contextual Info: BUR R-BR OW N d VFC121 Precision Single Power Supply VOLTAGE-TO-FREQUENCY CONVERTER FEATURES APPLICATIONS • SINGLE SUPPLY OPERATION: +4.5V to +36V • fQ= 1.5MHz max • LOW NONLINEARITY: 0.03% max at 100kHz, 0.1% max at 1MHz • HIGH INPUT IMPEDANCE • VOLTAGE REFERENCE OUTPUT


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    VFC121 100kHz, VFCI21 100kHz. VFC121 PDF

    74LS145

    Abstract: TS02H
    Contextual Info: fQ MOTOROLA SN54/74LS145 1-OF-IO DECODER/DRIVER OPEN-COLLECTOR The S N 54/74LS145, 1-of-10 Decoder/Driver, is designed to accept BCD inputs and provide appropriate outputs to drive 10-digit incandescent displays. All outputs remain off for all invalid binary input conditions. It is


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    SN54/74LS145 54/74LS145, 1-of-10 10-digit 74LS145 TS02H PDF

    CM600-28

    Abstract: diode 200 Ampere IGBT BP107 CM600HA-28 T73 laser diode 600A
    Contextual Info: b4E D • 7 2 t14b21 0D0tt.7b T73 * P R X CM600HA-28 Powerex, Inc., 200 H illis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 A venue G. Durand, BP107, 72003 L e Mans, France (43) 41.14.14 Single IGBTMOD j^ /fQ £ ju l&


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    CM600HA-28 BP107, Amperes/1400 CM600HA-28 -1200A//XS -1200A/ CM600-28 diode 200 Ampere IGBT BP107 T73 laser diode 600A PDF

    PHOTO TRANSISTOR 940nm

    Abstract: sidelooker DIODE bvoe
    Contextual Info: FQ PLASTIC SIDELOOKER PAIR OPTOELECTHOIIICS QPE1113 PACKAGE DIMENSIONS .08 DIA. 08 DIA. .050 1.27 J .050 (1 .2 7 )1 .062 DIA. .062 DIA .020 (0.51) SQ NOM .100 ( 2 .5 4 )- "ÏÔo"(2.54) .020 (0.51) .020 (0.51 )J —.175 ( 4 .4 4 ) — .175 ( 4 .4 4 )— -


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    QPE1113 ST2171 ST2171 QPE1113 940nm PHOTO TRANSISTOR 940nm sidelooker DIODE bvoe PDF

    2sc4977

    Abstract: transistor 2SC4977 ET-190 2sc3320 transistor 2sC2625 transistor ET391 ET-391 2SC4786 2sc4831 2SC4977 transistor
    Contextual Info: FUJI STLSÊirtEDÊ SWITCHING TRANSISTORS Ée "j . '• ï>> I TÉjJii * N fq & zo \ _ < § P". m \k ‘ W » M î» T Is V l IC AMPS Max. 3 5 6 8 VcEoV J sus 800 80 Device Type NPN 2SC3550 180 80 2SD921 800 80 2SC3551 1000* 80 ET383 700 80 2SC3505 Ppc IC AMPS


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    2SC2929 2SC3549 2SD1157 2SD834 2SD1073 2SB862* 2SD1128 2SD982 2SC2767 2SD1072 2sc4977 transistor 2SC4977 ET-190 2sc3320 transistor 2sC2625 transistor ET391 ET-391 2SC4786 2sc4831 2SC4977 transistor PDF

    BFQ31

    Abstract: MI350 BFQ31AR "UHF Transistors" bfq31r BFQ31A
    Contextual Info: SOT23 NPN SILICON PLANAR VHF/UHF TRANSISTORS ISSU E 3 - JANUARY 1996 P A R T M A R K IN G D E T A IL S BFQ31 B F Q 3 1A - S2 - S4 B FQ 31A R - S5 BFQ 31R - S3 ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L Collector-Base Voltage Collector-Emitter Voltage


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    BFQ31 BFQ31A BFQ31AR BFQ31R BFQ31 BFQ31A 10ftA, 100MHz 60MHz MI350 "UHF Transistors" PDF

    BFQ233

    Abstract: BFQ253
    Contextual Info: Philips Components B FQ 233 JV NPN HIGH F R E Q U E N C Y H IG H V O L T A G E T R A N S IS T O R NPN silicon epitaxial transistor w ith emitter ballasting resistors and a gold sandwich metallization to ensure optimum temperature profile and excellent reliability properties. It features high break-down


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    BFQ253. BFQ233 BFQ233 BFQ253 PDF

    capacitor 10kpf

    Abstract: Ft50-43 balun transformer 50ohm BN43-202 bn43202 10KPF 103M capacitor TOROIDAL transformer specification SR703 BN-43-202
    Contextual Info: 17 TB-113 RF TEST DATA RECORD TEST SPECIFICATION - SR703 AMP REVISED VDS - 28 V UNIT # Fq MHz 1 2 3 4 5 6 7 8 9 10 11 100 110 120 130 140 150 160 170 180 190 200 IDQ - 4.0 A Pin (WATTS) INPUT RT LOSS (DB) Pout (WATTS) OPERATOR - KM ID (AMPS) -17 -19 -21


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    TB-113 SR703 082uF 10KpF 10MFD capacitor 10kpf Ft50-43 balun transformer 50ohm BN43-202 bn43202 10KPF 103M capacitor TOROIDAL transformer specification BN-43-202 PDF