BB53I3I Search Results

BFR64

Abstract: multi-emitter transistor BFR64 DATA vk200 philips vk200 coil VK-200-10 7Z7Z609 Transistor D 798 BFQ34
Contextual Info: N AMER PHILIPS/DISCRETE asE d m bb53i3i aoi?ciT? a B FQ 34 is recommended for new design BFR64 T - 3 3 - 0 S - N-P-N H.F. WIDEBAND TRANSISTOR N-P-N m ulti-em itter transistor in a capstan envelope. The transistor has extrem ely good intermodulation properties and high power gain.

Contextual Info: N AMER P H I L I P S / D I S C R E T E bbS3T31 0011173 a • ObE D BTW 63 SERES y v ^ r - a s - - 17 F i FAST TURN-OFF THYRISTORS Glass-passivated, asymmetrical, fast turn-off, forward blocking thyristors ASC R in TO-48 envelopes, suitable for operation in fast power inverters. For reverse-blocking operation use with a series diode,

Contextual Info: . l .1_ _ N AMER PHILIPS/DISCRETE ObE D bb53T31 0DlS2b3 a • RZ3135B15W R Z3135B30W |3 PULSED POWER TRANSISTORS FOR S-BAN D RADAR N-P-N transistors fo r use in common-base pulsed power amplifiers fo r S-band radar 3,1 to 3,5 GHz .

buz90

Abstract: BU790 transistor buz90 ti211 T0220AB buz90n buz-90
Contextual Info: PowerMOS transistor_ BUZ90_ N AMER PHILIPS/DISCRETE OLE D • 1^53131 0D14S51 T ■ i May 1987 GENERAL DESCRIPTION N-channel enchancement mode fleld-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies