IGBT Search Results

IGBT loss calculate

Contextual Info: n j] DN-57 b U N IT R O D E Design Note Power Dissipation Considerations for the UC3726N/UC3727N IGBT Driver Pair by Mickey McClure Application Engineer Motion Control Products Optimized or driving Insulated Gate Bipolar Transis­ tors (IGBTs , the UC3726N/UC3727N IGBT driver

MG100Q2YS1

Contextual Info: GTR MODULL SILICON N CHANNEL IGBT MG100Q2YS1 HI GH POWER S WIT C H I N G A P P L I C A T I O N S . Unit M O T O R C ONT R O L A P P L I C A T I O N S . in m m • High Input Impedance • High Speed : t f =0. 5fis Max. t r r = 0 . 5 (is ( M a x . ) •Low Saturación Voltage:

MG400 TOSHIBA

Contextual Info: TOSHIBA MG400Q1US51 TO SH IBA GTR M O DULE SILICON N CHANNEL IGBT MG400 1 US51 HIGH P O W ER SWITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS • • H igh Input Impedance H ighS peed : tf= 0.3/;s Max. Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

diode E155

Abstract: mig20j
Contextual Info: T O SH IB A TENTATIVE MIG20J906E/EA TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J906E, MIG20J906EA HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter and Brake Power Circuits and Thermistor in One Package.

mig10J

Contextual Info: TOSHIBA MIG10J855H TENTATIVE TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG10 J855H Units in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage :

Contextual Info: T O SH IB A MG75J1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 7 5 J 1 BS1 1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm • High Input Impedance • H ighSpeed • Low Saturation Voltage : VQE sat = 2.7V (Max.) (Iq = 75A)

MG50H2YS1

Contextual Info: MG50H2YS1 GTR MODULE_ SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. FEATURES : . High Input Impedance : tf= 1 . 0/is Max. . High Speed trr = 0 . 5 y s ( M a x .) . Enhancement-Mode . Includes a Complete Half Bridge in one

Contextual Info: TO SH IBA TENTATIVE MIG50J804H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG50J804H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage : 3ji 50A /600V High Speed Type IGBT

mg75n2ys

Abstract: LTA 703 S MG75N2YS1 MG75N2 MG75N2Y
Contextual Info: MG75N2YS1 GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in iran MOTOR CONTROL APPLICATIONS. High Input Impedance tf=l.O u s Max. High Speed trr=0-5|Js(Max. ) . Enahncement-Mode . Includes a Complete Half Bride in One Package.

Contextual Info: TOSHIBA GT2QG102 SM TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N-CHANNEL IGBT GT20G102(S M) STROBE FLASH APPLICATIONS U nit in mm • High Input Impedance « Low Saturation Voltage : V q e (sa t) = 8V (Max.) (l£ = 130A) • Enhancement-Mode •

Contextual Info: TOSHIBA MG200Q1US51 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT MG200 1 US51 H IG H P O W E R S W IT C H IN G AP PLIC A TIO N S M O T O R C O N T R O L A P P L IC A T IO N S • H ig h I n p u t Im p ed an ce • H i g h s p e e d : tf = 0 .3 /is M a x .

mig15j

Contextual Info: T O SH IB A TENTATIVE M IG 1 5 J805 E TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MI G 1 5 J 8 0 5 E HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • Integrates Inverter, Converter Power Circuits in One Package. Output Inverter Stage

Contextual Info: TOSHIBA MG90V2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG90V2YS40 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS 4-FAST-ON-TAB #110 • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete Half Bridge in One

Contextual Info: TOSHIBA TENTATIVE GT30J301 TO SH IBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH P O W E R SWITCHING APPLICATIONS Unit in mm M OTOR CONTROL APPLICATIONS $3.2 ± 0.2 The 3rd Generation Enhancement-Mode High Speed : t f= 0.30/^s Max.

GT50J102

Contextual Info: GT50J102 TOSHIBA G T 5 0 J 1 02 TO SH IBA INSU LATED GATE BIPO LAR TRANSISTOR SILICON N C H A N N EL IGBT HIGH POW ER SW ITCHING APPLICATIONS. M O T O R C O NTRO L APPLICATIONS. • • • • The 3rd. Generation. Enhancement-Mode. High Speed. : tf = 0.30/« Max.

GT60M101

Contextual Info: INSULATED GATE BIPOLAR TRANSISTOR GT60M101 SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm 20.5MAX #3.3±0.2 . High Input Impedance . High Speed : tf=0.7ns Max. . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode 2.51 3.0

Contextual Info: GT30J311 TOSHIBA TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf= 0.30/iS Max. Low Saturation Voltage : VQE(say = 2.7V (Max.)

MG50J2YS1

Abstract: IGBT MG50J2YS1
Contextual Info: GTR MODULE SILICON N CHANNEL IGBT MG50J2YS1 HIGH PO WER S W I T C H I N G APPL I CA TI ON S . M O T O R C ON T RO L A P PL IC A TI ON S. . High Input Impedance . High Speed : t f=0.3 5 / j s Max. trr=0. 25|is(May.) . Low Saturation Voltage : VCE(sat)=4•0V(Max.)

Contextual Info: TO SH IBA GT10J301 GT10J301 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANN EL IGBT Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 1 5 .9 M A X m The 3rd Generation. Enhancement-Mode. High Speed. : tf=0.30,«s Max.

P channel 50A IGBT

Contextual Info: TO SH IBA MIG50J101 H M I G 5 0 J 1 01 H TO SH IBA INTELLIGENT GTR M O D U LE SILICON N CHANNEL IGBT HIGH PO W E R SW ITCHING APPLICATIONS M OTO R CONTROL APPLICATIONS • Integrates Inverter & Control Circuits IGBT drive units, Protection units for Over-Current, UnderVoltage & Over-Temperature in One Package.

gt50j

Contextual Info: TOSHIBA GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 5 0 J 1 02 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The 3rd. Generation. • Enhancement-Mode. • High Speed. 2 0.5 MAX. fi 3.3 ±0.2

Contextual Info: TO SH IBA TENTATIVE GT15Q311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf=0.40/^s Max. Low Saturation Voltage : VCE (sat)^ 3 .5 V (Max.)

MP6754

Contextual Info: T O SH IB A MP6754 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MP6754 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode Low Saturation Voltage

Contextual Info: TO SHIBA MG75Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)