FLX102MH12 Search Results

FLR024FH

Abstract: FLX102MH-12 flx202mh-12 FLS09ME FLS09 FLR016XP FLR014XP FLR014FH FSC10FA FLR056XV
Contextual Info: - 138 - S £ tt € m & i* » f t ; ht * * m £ V P d /P c h 1 * * m K V * (V) (A) * * (W> Ig s s (max) (A) Vg s (V) (min) (A) % (max) V d s (A) (V) ft ¡8 fé (min) (V) (max) V d s (V) (V) (Ta=25°C) (min) (S) Id (A) Vd s (V) Id (A) .2.2 FLM7785-8C/D

FLX102MH-12

Abstract: cu2cu FUJITSU XBAND FLX102MH12
Contextual Info: n FLX102MH-12 X-Ku Band Power GaAs FETs . I 1jU FEATURES • • • • • High Output Power: P-|dB = 30.0dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 33%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLX102MH-12 is a power GaAs FET that is designed for general

FLC301XP

Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Contextual Info: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips

Contextual Info: F|.fjU,. FLX102MH-12 X-Ku Band Power GaAs FETs r U J I I ->U FEATURES • • • • • High O utput Power: P-|<jB = 30.0dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 33% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package DESCRIPTION

FMC141401-02

Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
Contextual Info: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking

PT 1440

Contextual Info: F L X 102 M H - ¡2 X -k ii B a n d Power iaAs FETs ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C Item Symbol uonamon Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs ~5 V 7.5 w °c °c Total Power Dissipation Pt Tc = 25°C Storage Temperature

FSX52WF

Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
Contextual Info: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of

FLK202MH-14

Abstract: FLK052WG
Contextual Info: S E MIC POWER GaAs FETs Electrical Characteristics Ta = 25°C Plc» TYP. <t*B) G id B TYP. (dB) Tladd TYP. (dB) f (GHz ) VDS (V) *DS <mA) Bth TYP. (°C/W) Package Type FLX102MH-12* 30.0 7.5 33 12.5 10 240 15 MH FLX2Ó2MH-12* 32.5 7.0 28 12.5 10 480 10 MH