FET 2SK58 Search Results

2SK585

Abstract: FET 2SK585
Contextual Info: SONY CORP/CO MP ON EN T PRODS 77 DElfl3flE3ñ3 □000 24 D 1 I ” oT ~ 3 t'J 2 S 2SK585 SONY GaAs N-channel MES FET J D e scrip tio n : The 2SK585 is a general purpose N-channel GaAs FET having a one-micron gate length designed for amplifier, mixer, and oscillator applications through the X-band. Plastic

2SK586

Contextual Info: SONY CORP/COMPONENT PRODS 77 D E lñ 3 a a 3 ñ B 0 T rJ / -J2ÆT 0 0 0 0 2 3 k, 7 N'Y GaAs N-channel MES FET Description: The 2SK586 is a low noise N-channel GaAs FET having a 0.5 micron gate length designed for amplifiers up to the Kuband. Hermetic sealed ceramic packaging has been adopted

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

2SK580

Abstract: 2SK579 2SK57 2SK58
Contextual Info: 2SK579 L ,2SK580£), 2SK579 ,2SK580(§) IJ J V N * + M O S FET SILICON N -C H A N N EL M O S FET HIGH S P E E D PO W ER SWITCHING 3F à I © Type L -J Type 2,4 r= 2i 1. Y - V : G ate 2. F l " i > ! D ra in 3. y 4. F w - Í X ! D ra in — X I S o u rc e

Contextual Info: O rdering number: EN 1793B _ 2SK583 N-Channel Enhancement MOS Silicon FET Analog Switch Applications Applications . Analog switches, low-pass filters Features . Large |yfs| . Enhancement type . Small ON-resistance Absolute Maximum Ratings at Ta=25°C

2SK583

Abstract: 1793b
Contextual Info: O rdering num ber: EN 1793B 2SK583 N0.1793B N-Channel Enhancement MOS Silicon FET SANYO i Analog Switch Applications Applications . Analog switches, low-pass filters Features . Large |yfs| . Enhancement type . Small ON-resistance Absolute Maximum Ratings at Ta=25°C

E112 FET

Abstract: E112 N-Channel FET SILICONIX E112 2SK582 2SK518J MMBF4861 KE4093 TO226AA MMBF4860 InterFET
Contextual Info: JUNCTION FET Item Number Part Number Manufacturer V BR GSS IDSS (V) (A) g. Max loss Max (V) (A) VOS(off) Min (S) Max Clas Max (F) PD Max (W) Derate at (WrC) Toper Max eC) Package Style N-Channel JFETs, (Co nt' d) 5 10 15 20 2SK582 UG251 KE4861 MMBF4861 PN4861

2sk1603

Abstract: 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915
Contextual Info: Power MOS FET Type No. index Main Characteristics Type No. Series Nam e, Package Type Voss V 2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2SJ240 2SJ241 2SJ304 2SJ315 2SJ312 2SJ313 2SJ334 2SJ338 2SJ349 2SJ359 2SJ360 2SJ377 2SJ378

J289

Abstract: 3SK266 2SK1728 3sk251 DS-17 SANYO
Contextual Info: SAftYO Small-signal MOSFETs Feat, u r e s ♦ Very low noise figure * Large IYf s I * Low gate leak current Sma11-sized package permitting FET-used sets to be made smaller Case Out 1inesiunit:mm SANYO:CP4 x Lr Amp, Low Noise, Analog Switch Impedance Conversion Applications

J289

Abstract: K2171 2sj281 2SK1847 2SK1470 KD K1470 2sk669 K1311
Contextual Info: Small-signal Features MOS FETs ♦ Very low noise_ figure * Large _ |Yfs| # Low gate leak current * Small-sized packageipermitting — ' i ♦ FET-used sets to be made, smaller Case Oct 1in.es /uni I.:a SANYO :C:'4 sjc LF Amp, Low Noise, Analog Switch Impedance Conversion Applications

SK968

Abstract: 2SK937 2SK544 2SK669 2SJ286 2SK5 2SK212 2SK543 2SK436 2SK715
Contextual Info: Smal 1-signal SA*YO FETs Features ♦ Very low noise figure * Large IYfsI * Low gate leak current Case Outlines unit¡mm SANYO:SMCP ♦ Small-sized package permitting FET-used sets to be made smaller l¡Source, 2¡Drain, 3¡Gate, i LF ),Low Noise,Analog Switch,Impedance Conversion Applications

e304 fet

Abstract: 2SK581 Siliconix E304 MPF4860 TP5950 PN4304 InterFET bf256s PN4222 U199
Contextual Info: JUNCTION FET Item Number Part Number Manufacturer V BR GSS IDSS (V) (A) 9,. Min (S) Max VGS(otf) Max (V) IGSS Max (A) Clsa Max (F) PD Max (W) Derate at Toper (WrC) (OC) Max Package Style N-Chann I JFETs, (Cont'd) -5 10 BF256B BF256LB PF51 02 2SK121 ESM4092

FET 2SK23A

Abstract: 2SK107 2SK23A 2SK23A-8 2SK58 2SK23A9 FET+2SK23A
Contextual Info: SO N Y « 2SK23A Silicon N C hannel Ju n ctio n FET • Â S îD C -to -V H F Use. L o w Noise. High R e liab ility • Economical Typ e: 2 S K 1 0 7 • Dual T y p e : 2SK58 Absolute M axim um Ratings T É = 2 6 C Characteristics Sym bol 2SK23A -8 2 S K 2 3 A 9

2SK587

Contextual Info: SONY C O R P /C O M P O N E N T PRODS 7 7 DE ^ 5 3 5 5 3 5 3 0 D 0 I]a 3 a □ W T '3 l~ < 2 5 Description: The 2SK587 is a low noise N-channel GaAs FET having a 0.5 micron gate length designed for amplifiers up to the Kuband. Plastic mold packaging has been adopted to reduce cost.

2SK579

Abstract: MPT 0,5 k580
Contextual Info: S K 5 7 9 , 2 S K 5 8 2 S K 5 7 9 < § , 2 S K 5 8 L ), S •HITM 2 SILICON N-CHANNEL MOS FET 3 bS HIGH SPEED POWER SWITCHING DC-DC Converter, Motor Controls, and Ultrasonic 1. 2. 3. 4. Power Oscillators. G ate D r a in So u rce D ra m (D im e n s io n s in m m l

k669 transistor

Abstract: k544 K932 transistor mosfet k544 k427 transistor k583 k427 K932 k222 mosfet k546
Contextual Info: SAfÊYO Small-signal Junction FETs/MOSFETs F e a tu re s Case O u tlin e s unit.'m m SANYO:SMCP 1 : S ource, 2 : Drá i n, 3 : Ga te * V e r y low n o is e f ig u r e * L arge |Y f s | * Low g a te le a k c u r r e n t * S m a ll-s iz e d package p e r m ittin g FET-used s e t s to be made s m a lle r

hitachi mosfet power amplifier audio application

Abstract: 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56
Contextual Info: APPLICATION NOTE 1-9 Pov/er MOS FET • ' Bo* 3 V•? * ¿ 'S r ^ m is y 701 S ! Reo N o 64 1688 07 P O BO X 1194. R A N D tíU R G , 2 1 2 5 M F K E N T H O US E D O V E R S T R E E T . R A N D B U R G T V L , 21 9 4 0 1 1 7 8 9 1 4 0 0 /2 T E L E X 4 -2 0 4 5 2 F A X 1 0 1 1 )7 8 7 0 2 6 3

FET 2SK23A

Abstract: 2SK107 2SK23A 2sk58 FET 2SK58 FET 2SK23A 834
Contextual Info: SONY* 2SK58 Silicon N -C hannel Ju nctio n T y p e D ual F E T •D C -io -V H F U se . L o w • N o ise , .n * * 7— 1 t“ •• * • Oscilloscope. Oscillators, A u d io P re -A m p lifie rs ññfl • Head-Am plifiers o f A u d io P ow er A m p lifie r*

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

2SK41

Abstract: 2SK331
Contextual Info: V -KO V «o V k bd Î I, V Pc V fK R I kbd bo Vc . max V kb max V('K - 70 -280 Ir tf* V.-B C«h t c rr 5 1 20 - - - - - - 80 0.1m 4 0.1m 12 t80 4 0.1m 2 1 - 70 - 280 5 1 20 2 T 40 150 200 100/* 7 lOO/i 5 0.3 - >35 10 0.3 5 5 1 - >35 10 1 5 - - 5 0.3 - >35

2SK41

Abstract: 2SK44 2SK24 CAPACITOR MICROPHONE 2SK44 D 2SK44SP 2SK336 STDP 2SD1237 2SD1238
Contextual Info: V „o tv„« V e BU I, Pc i , I khii IcBO V « max VM max Vr* Ic 1>KK f Ur, VcH Vck Ir tf* C«h t c rr R em arks V cko >• Electrical Chatacteristics/Ta=25°C A bsolute M aximum Ratings/Ta=25°C S tru ctu re Case O utline ICminer.com N > Applications R eplacem ent

2SK44

Abstract: 2SK41 CAPACITOR MICROPHONE 2SK44 D 2SK24 2sk44sp 2SK336 2SK25 2SD1238 SP 2022
Contextual Info: V «o Vcko t Vf KK Vebu I, P, i , I khii ^CBO V « max Vkb max Vr* Ic f 1>KK U r, V cb Vck I, tf* C«h t c rr 2SD1237 High C urrent Switching 2010A S.EPL 120 80 6 7 Î40 150 80 0.1m 4 0.1m 2 1 - 70-280 5 1 20 ~ - 2SD1238 High C urrent Switching 2022 S,EPL