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    FAILURE TEST DATA Search Results

    FAILURE TEST DATA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFMJMPC226R0G3D
    Murata Manufacturing Co Ltd Data Line Filter, PDF
    54HC152J/B
    Rochester Electronics LLC 54HC152 - 8 to 1 Line Data Selectors/Multiplexers PDF Buy
    54LS298/BEA
    Rochester Electronics LLC 54LS298 - DATA SEL/MULTIPLEXER, QUAD 2-INPUT, WITH STORAGE - Dual marked (M38510/30909BEA) PDF Buy
    54S153/BEA
    Rochester Electronics LLC 54S153 - DATA SEL/MULTIPLEXER, DUAL 4-INPUT - Dual marked (M38510/07902BEA) PDF Buy
    54F257/BEA
    Rochester Electronics LLC 54F257 - DATA SEL/MULTIPLEXER, QUAD 2-INPUT, WITH 3-STATE OUTPUTS - Dual marked (M38510/33906BEA) PDF Buy

    FAILURE TEST DATA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Novacap

    Abstract: mtbf 90 2004 FAILURE
    Contextual Info: Class II 200ºC Operational Life Test Data Failure Rates at 90% Confidence Test Conditions: Time Period: Number of Capacitors Tested: Testing Location: Results: Conversion Factors: 2000hrs. @ 200ºC. Applied voltage is dependent on capacitors tested. March 2004 to July 2007.


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    2000hrs. Novacap mtbf 90 2004 FAILURE PDF

    MIL-STD-883 Method 3015.7

    Abstract: EIA-583 H820 EIA 583
    Contextual Info: VISHAY Vishay Telefunken Life Test Data for IRDC Modules Technology includes : TFDS3xxx, TFDx4xxx, TFDx6xxx Predicted failure rate (FITs), based on accelerated life testing At 60% upper confidence level derated to 55°C assuming the activation energy to be 0.8 eV.


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    TFDx3000/4xxx Failures/109 EIA-583 22-A113. 22-A113 MILSTD-883 MIL-STD-883 Method 3015.7 EIA-583 H820 EIA 583 PDF

    HEDS-5500

    Abstract: HEDS-6500 HEDS-9000
    Contextual Info: HEDS-5500, HEDS-6500 and HEDS-9000, 9100, 9200 Series Motion Sensing Products, Optical Encoder Modules Reliability Data Description Failure Rate Prediction The following cumulative test results have been obtained from testing performed at Avago Technologies in accordance with the latest revision of MIL- STD-883.


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    HEDS-5500, HEDS-6500 HEDS-9000, STD-883. MIL-STD-883C 5965-2775E 5965-9642E HEDS-5500 HEDS-9000 PDF

    2005 Z

    Abstract: R 753 tcr-125 TCR55 S10K 22-315
    Contextual Info: CHINA 752 & 753 SERIES QUALIFICATION DATA FOR THE YEAR 2005 RES TEST BL# LET VALUE MIN MAX AVG RES QTY PARTS TOTAL PER PART TESTED FAILURE RESISTORS REPORT QTR PARTS RES FAILED FAILED PART SERIES YEAR NUMBER IN RES 19747 D 100/1K - - - 12 80 - 1 752


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    100/1K 753091331G 22316S 753091103G 752QA1 2005 Z R 753 tcr-125 TCR55 S10K 22-315 PDF

    Contextual Info: N AMER PHILIPS/DISCRETE fl7D D bbS3T31 COOTS47 5 11 . T -01-01 LID RELIABILITY DATA | UNIT HOURS #O F FAILURES FAILURE RATE* 1483 1,475,840 2 .21 1520 1,519,000 .06 TEMPERATURE # F UNITS Operating Life T ,= 150°C Storage Life Ta = 150°C ' test • . l| §


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    bbS3T31 COOTS47 Failures/1000 MIL-STD-690B. LTA101A LTA320 LTA324 LTA741 LTA741C PDF

    capacitor 680pf cog x7r

    Abstract: 5750 2220 Ceramic Capacitors Capacitor 47uf 100V 1210 x7r
    Contextual Info: ST Series Soft Termination Multilayer Ceramic Chip Capacitors MERITEK RoHS FEATURES • • • • • • • Wide capacitance range in a given size High performance to withstanding 5mm of substrate bending test guarantee Reduction in PCB bend failure Lead free terminations


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    PDF

    LSI402Z

    Abstract: LSI402ZX dB06 Internal ROM Booting
    Contextual Info: Troubleshooting Guide for LSI402Z/ZX-Based Systems Application Note Contents 1 2 3 DB06-000269-00 Introduction What to look for after reset 2.1 Clock output 2.2 Internal booting - self test 2.3 External booting Possible failure symptoms and causes 3.1 Applying power


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    LSI402Z/ZX-Based DB06-000269-00 LSI402Z/ZX-Based LSI402Z LSI402ZX LSI402ZX dB06 Internal ROM Booting PDF

    SMD 43A

    Abstract: IRHNB7260 IRHNB8260
    Contextual Info: PD - 91798 IRHNB7260 IRHNB8260 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω, MEGA RAD HARD HEXFET 200Volt, 0.070Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irradiation test


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    IRHNB7260 IRHNB8260 200Volt, Rectifie10) SMD 43A IRHNB7260 IRHNB8260 PDF

    IRH7054

    Abstract: IRH8054
    Contextual Info: PD - 90883A IRH7054 IRH8054 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 60Volt, 0.025Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-radiation test


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    0883A IRH7054 IRH8054 60Volt, IRH7054 IRH8054 PDF

    V15000

    Abstract: IRHNB7Z60 IRHNB8Z60
    Contextual Info: PD - 91754 IRHNB7Z60 IRHNB8Z60 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω, MEGA RAD HARD HEXFET 30Volt, 0.009Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irradiation test


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    IRHNB7Z60 IRHNB8Z60 30Volt, V15000 IRHNB7Z60 IRHNB8Z60 PDF

    diode smd ed 49

    Abstract: 2N739 2N7394 n mosfet 60volt 30a IRHN7054 IRHN8054 JANSH2N7394U JANSR2N7394U 2N7394U
    Contextual Info: PD - 90884A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR IRHN7054 IRHN8054 JANSR2N7394U JANSH2N7394U [REF:MIL-PRF-19500/603] N-CHANNEL Ω , MEGA RAD HARD HEXFET 60Volt, 0.027Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irradiation test


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    0884A IRHN7054 IRHN8054 JANSR2N7394U JANSH2N7394U MIL-PRF-19500/603] 60Volt, diode smd ed 49 2N739 2N7394 n mosfet 60volt 30a IRHN7054 IRHN8054 JANSH2N7394U JANSR2N7394U 2N7394U PDF

    sensors mttf

    Abstract: SAC405 UM 3841 4953 sac 405 "Hall Effect Sensor" mttf resistor activation energy sURVEY OF Hall Effect Current Measurements WLCSP Cu6Sn5
    Contextual Info: Mean Time To Failure in Wafer Level-CSP Packages with SnPb and SnAgCu Solder Bumps Stephen Gee and Luu Nguyen National Semiconductor M/S 19-100 3875 Kifer Rd. Santa Clara, CA 95051 stephen.gee@nsc.com luu.nguyen@nsc.com ABSTRACT In this test setup, embedded die surface temperature sensors are


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    ED-16 IPACK2005-73417, sensors mttf SAC405 UM 3841 4953 sac 405 "Hall Effect Sensor" mttf resistor activation energy sURVEY OF Hall Effect Current Measurements WLCSP Cu6Sn5 PDF

    IRHF7310SE

    Contextual Info: Provisional Data Sheet No. PD-9.1444 IRHF7310SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω, (SEE) RAD HARD HEXFET 400 Volt, 4.5Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD


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    IRHF7310SE IRHF7310SE PDF

    IRHI7360SE

    Abstract: TO-259 TO259
    Contextual Info: Provisional Data Sheet No. PD-9.1446A REPETITIVE AVALANCHE AND dv/dt RATED IRHI7360SE HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω, (SEE) RAD HARD HEXFET 400 Volt, 0.20Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD


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    IRHI7360SE IRHI7360SE TO-259 TO259 PDF

    xilinx MTBF

    Abstract: X094 XAPP094 XC4005E XC2VP4
    Contextual Info: Application Note: Virtex-II Pro Family R Metastable Recovery in Virtex-II Pro FPGAs Author: Peter Alfke XAPP094 v3.0 February 10, 2005 Summary This application note describes the probability of a metastable event occuring in a Xilinx Virtex -II Pro FPGA. The test circuit measures the Mean Time Between Failure (MTBF) of


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    XAPP094 XC4005E, xilinx MTBF X094 XAPP094 XC4005E XC2VP4 PDF

    IRHNB8160

    Abstract: IRHNB7160
    Contextual Info: PD - 91795 IRHNB7160 IRHNB8160 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω, RAD HARD HEXFET 100Volt, 0.040Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs


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    IRHNB7160 IRHNB8160 100Volt, IRHNB8160 IRHNB7160 PDF

    IRHM7054

    Abstract: IRHM8054 JANSH2N7394 JANSR2N7394
    Contextual Info: PD - 90887C REPETITIVE AVALANCHE AND dv/dt RATED IRHM7054 IRHM8054 JANSR2N7394 JANSH2N7394 [REF: MIL-PRF-19500/603] N-CHANNEL HEXFET TRANSISTOR MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 60Volt, 0.027Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irradiation test


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    90887C IRHM7054 IRHM8054 JANSR2N7394 JANSH2N7394 MIL-PRF-19500/603] 60Volt, IRHM7054 IRHM8054 JANSH2N7394 JANSR2N7394 PDF

    L504XXX

    Abstract: transistor 9427 m507xxx 9437 transistor CLCC 100 1550371 9434 8 pin integrated circuit
    Contextual Info: March 1996 RR-B1A High-Frequency Bipolar Products Reliability Report This report presents the product reliability data for Maxim’s High-Frequency Bipolar analog and digital products. This data was collected from extensive reliability stress tests performed between June 1, 1994 and July 1,


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    12GHz 27GHz L504XXX transistor 9427 m507xxx 9437 transistor CLCC 100 1550371 9434 8 pin integrated circuit PDF

    XC2018 PC84

    Abstract: xc4300 XC4020 HQFP208 HQFP34 XC1765D XC3342 XC4305 XC4005E PHYSICAL XC500 356E-09
    Contextual Info: The Reliability Data Program Expanded Version April 1, 1998 Cover TABLE OF CONTENTS Introduction .3 The Reliability Program. .3


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    PLCC-20, XC2018 PC84 xc4300 XC4020 HQFP208 HQFP34 XC1765D XC3342 XC4305 XC4005E PHYSICAL XC500 356E-09 PDF

    Contextual Info: EEPROM Reliability The reliability of AMD's NS-18 process used in the fabrication of 64K EEPROMs is described in this report. The reliability monitors used at AMD were designed to predict the future operating life results by accelerat­ ing failure rates. The monitors include data from endur­


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    NS-18 Am2864AE/BE Am2864B PDF

    MAX7845

    Abstract: MAX232 MAX232 mtbf mar 9109 MAX333 equivalent MAX9690 equivalent scr 9117 maxim 9114 max232 specification MAX252 8 pin
    Contextual Info: RR-1G Product Reliability Report This report presents the product reliability data for Maxim’s analog products. This data is a result of extensive reliability stress testing that we performed from 1990 to 1992. It is separated into four groups: Metal Gate


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    X10-9 MAX7845 MAX232 MAX232 mtbf mar 9109 MAX333 equivalent MAX9690 equivalent scr 9117 maxim 9114 max232 specification MAX252 8 pin PDF

    62137A

    Contextual Info: Cypress Semiconductor Qualification Report QTP# 99262/99261 VERSION 1.0 December, 1999 MoBL SRAM, R52LD Technology, Fab 4 Qualification CY62136V/CY62137V 128K x 16 Static RAM CY62138V 256K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell


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    R52LD CY62136V/CY62137V CY62138V CY62136V/62137V/62138V 7C62136/7A) 7C62136A/62137A/62138A H137V-ZSIB CY62137V-ZSIB 30C/60 62137A PDF

    tsmc design rule

    Abstract: tsmc cmos tsmc Activation Energy tsmc L28-TSMC
    Contextual Info: Cypress Semiconductor Product Qualification Report QTP# 001205 VERSION 1.2 July, 2000 Low Cost Three-PLL Clock Generator CY2081SC/CY2081SL TSMC-2A, Taiwan CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Manager 408 432-7069 Cypress Semiconductor


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    CY2081SC/CY2081SL L28-TSMC CY2081SC/CY2081SL CY2280-OC 85C/85 tsmc design rule tsmc cmos tsmc Activation Energy tsmc PDF

    4946

    Abstract: CY7C1041B CY7C1046B CY7C1049B JESD22 MIL-STD-883 PRESSURE COOKER
    Contextual Info: Cypress Semiconductor Product/Technology Qualification Report QTP# 000301 VERSION 1.0 May, 2000 4 Meg Asynchronous RAM R52D-5R Technology, Fab 4 CY7C1041B 256K x 16 Static RAM CY7C1046B 1M x 4 Static RAM CY7C1049B 512K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA:


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    R52D-5R CY7C1041B CY7C1046B CY7C1049B CY7C149B CY7C1049B-VC 4946 CY7C1041B CY7C1046B CY7C1049B JESD22 MIL-STD-883 PRESSURE COOKER PDF