FAILURE TEST DATA Search Results
FAILURE TEST DATA Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| NFMJMPC226R0G3D | Murata Manufacturing Co Ltd | Data Line Filter, | |||
| 54HC152J/B |
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54HC152 - 8 to 1 Line Data Selectors/Multiplexers |
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| 54LS298/BEA |
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54LS298 - DATA SEL/MULTIPLEXER, QUAD 2-INPUT, WITH STORAGE - Dual marked (M38510/30909BEA) |
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| 54S153/BEA |
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54S153 - DATA SEL/MULTIPLEXER, DUAL 4-INPUT - Dual marked (M38510/07902BEA) |
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| 54F257/BEA |
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54F257 - DATA SEL/MULTIPLEXER, QUAD 2-INPUT, WITH 3-STATE OUTPUTS - Dual marked (M38510/33906BEA) |
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FAILURE TEST DATA Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
Novacap
Abstract: mtbf 90 2004 FAILURE
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Original |
2000hrs. Novacap mtbf 90 2004 FAILURE | |
MIL-STD-883 Method 3015.7
Abstract: EIA-583 H820 EIA 583
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OCR Scan |
TFDx3000/4xxx Failures/109 EIA-583 22-A113. 22-A113 MILSTD-883 MIL-STD-883 Method 3015.7 EIA-583 H820 EIA 583 | |
HEDS-5500
Abstract: HEDS-6500 HEDS-9000
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Original |
HEDS-5500, HEDS-6500 HEDS-9000, STD-883. MIL-STD-883C 5965-2775E 5965-9642E HEDS-5500 HEDS-9000 | |
2005 Z
Abstract: R 753 tcr-125 TCR55 S10K 22-315
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100/1K 753091331G 22316S 753091103G 752QA1 2005 Z R 753 tcr-125 TCR55 S10K 22-315 | |
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Contextual Info: N AMER PHILIPS/DISCRETE fl7D D bbS3T31 COOTS47 5 11 . T -01-01 LID RELIABILITY DATA | UNIT HOURS #O F FAILURES FAILURE RATE* 1483 1,475,840 2 .21 1520 1,519,000 .06 TEMPERATURE # F UNITS Operating Life T ,= 150°C Storage Life Ta = 150°C ' test • . l| § |
OCR Scan |
bbS3T31 COOTS47 Failures/1000 MIL-STD-690B. LTA101A LTA320 LTA324 LTA741 LTA741C | |
capacitor 680pf cog x7r
Abstract: 5750 2220 Ceramic Capacitors Capacitor 47uf 100V 1210 x7r
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LSI402Z
Abstract: LSI402ZX dB06 Internal ROM Booting
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Original |
LSI402Z/ZX-Based DB06-000269-00 LSI402Z/ZX-Based LSI402Z LSI402ZX LSI402ZX dB06 Internal ROM Booting | |
SMD 43A
Abstract: IRHNB7260 IRHNB8260
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IRHNB7260 IRHNB8260 200Volt, Rectifie10) SMD 43A IRHNB7260 IRHNB8260 | |
IRH7054
Abstract: IRH8054
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Original |
0883A IRH7054 IRH8054 60Volt, IRH7054 IRH8054 | |
V15000
Abstract: IRHNB7Z60 IRHNB8Z60
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IRHNB7Z60 IRHNB8Z60 30Volt, V15000 IRHNB7Z60 IRHNB8Z60 | |
diode smd ed 49
Abstract: 2N739 2N7394 n mosfet 60volt 30a IRHN7054 IRHN8054 JANSH2N7394U JANSR2N7394U 2N7394U
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0884A IRHN7054 IRHN8054 JANSR2N7394U JANSH2N7394U MIL-PRF-19500/603] 60Volt, diode smd ed 49 2N739 2N7394 n mosfet 60volt 30a IRHN7054 IRHN8054 JANSH2N7394U JANSR2N7394U 2N7394U | |
sensors mttf
Abstract: SAC405 UM 3841 4953 sac 405 "Hall Effect Sensor" mttf resistor activation energy sURVEY OF Hall Effect Current Measurements WLCSP Cu6Sn5
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Original |
ED-16 IPACK2005-73417, sensors mttf SAC405 UM 3841 4953 sac 405 "Hall Effect Sensor" mttf resistor activation energy sURVEY OF Hall Effect Current Measurements WLCSP Cu6Sn5 | |
IRHF7310SEContextual Info: Provisional Data Sheet No. PD-9.1444 IRHF7310SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω, (SEE) RAD HARD HEXFET 400 Volt, 4.5Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD |
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IRHF7310SE IRHF7310SE | |
IRHI7360SE
Abstract: TO-259 TO259
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IRHI7360SE IRHI7360SE TO-259 TO259 | |
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xilinx MTBF
Abstract: X094 XAPP094 XC4005E XC2VP4
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XAPP094 XC4005E, xilinx MTBF X094 XAPP094 XC4005E XC2VP4 | |
IRHNB8160
Abstract: IRHNB7160
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IRHNB7160 IRHNB8160 100Volt, IRHNB8160 IRHNB7160 | |
IRHM7054
Abstract: IRHM8054 JANSH2N7394 JANSR2N7394
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Original |
90887C IRHM7054 IRHM8054 JANSR2N7394 JANSH2N7394 MIL-PRF-19500/603] 60Volt, IRHM7054 IRHM8054 JANSH2N7394 JANSR2N7394 | |
L504XXX
Abstract: transistor 9427 m507xxx 9437 transistor CLCC 100 1550371 9434 8 pin integrated circuit
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12GHz 27GHz L504XXX transistor 9427 m507xxx 9437 transistor CLCC 100 1550371 9434 8 pin integrated circuit | |
XC2018 PC84
Abstract: xc4300 XC4020 HQFP208 HQFP34 XC1765D XC3342 XC4305 XC4005E PHYSICAL XC500 356E-09
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PLCC-20, XC2018 PC84 xc4300 XC4020 HQFP208 HQFP34 XC1765D XC3342 XC4305 XC4005E PHYSICAL XC500 356E-09 | |
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Contextual Info: EEPROM Reliability The reliability of AMD's NS-18 process used in the fabrication of 64K EEPROMs is described in this report. The reliability monitors used at AMD were designed to predict the future operating life results by accelerat ing failure rates. The monitors include data from endur |
OCR Scan |
NS-18 Am2864AE/BE Am2864B | |
MAX7845
Abstract: MAX232 MAX232 mtbf mar 9109 MAX333 equivalent MAX9690 equivalent scr 9117 maxim 9114 max232 specification MAX252 8 pin
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Original |
X10-9 MAX7845 MAX232 MAX232 mtbf mar 9109 MAX333 equivalent MAX9690 equivalent scr 9117 maxim 9114 max232 specification MAX252 8 pin | |
62137AContextual Info: Cypress Semiconductor Qualification Report QTP# 99262/99261 VERSION 1.0 December, 1999 MoBL SRAM, R52LD Technology, Fab 4 Qualification CY62136V/CY62137V 128K x 16 Static RAM CY62138V 256K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell |
Original |
R52LD CY62136V/CY62137V CY62138V CY62136V/62137V/62138V 7C62136/7A) 7C62136A/62137A/62138A H137V-ZSIB CY62137V-ZSIB 30C/60 62137A | |
tsmc design rule
Abstract: tsmc cmos tsmc Activation Energy tsmc L28-TSMC
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Original |
CY2081SC/CY2081SL L28-TSMC CY2081SC/CY2081SL CY2280-OC 85C/85 tsmc design rule tsmc cmos tsmc Activation Energy tsmc | |
4946
Abstract: CY7C1041B CY7C1046B CY7C1049B JESD22 MIL-STD-883 PRESSURE COOKER
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Original |
R52D-5R CY7C1041B CY7C1046B CY7C1049B CY7C149B CY7C1049B-VC 4946 CY7C1041B CY7C1046B CY7C1049B JESD22 MIL-STD-883 PRESSURE COOKER | |