IRHNB7160 Search Results
IRHNB7160 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IRHNB7160 | International Rectifier | RADIATION HARDENED POWER MOSFET | Original | 110.25KB | 8 | ||
| IRHNB7160 | International Rectifier | 100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package | Original | 102.13KB | 8 |
IRHNB7160 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: PD - 91795 IRHNB7160 IRHNB8160 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD W , RAD HARD HEXFET 100Volt, 0.040W International Rectifier’s RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs |
Original |
IRHNB7160 IRHNB8160 100Volt, |