CY7C1041B Search Results

CY7C1041BV33

Abstract: CY7C1041BV33-15ZC
Contextual Info: 041BV33 CY7C1041BV33 256K x 16 Static RAM Features written into the location specified on the address pins A0 through A17 . If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A17).

Contextual Info:  CY7C1041BN 256 K x 16 Static RAM Features Functional Description • Temperature ranges ❐ Commercial: 0 °C to 70 °C ❐ Industrial: –40 °C to 85 °C ❐ Automotive-A: –40 °C to 85 °C ■ High speed ❐ tAA = 15 ns ■ Low active power ❐ 1540 mW max.

CY7C1041BN

Abstract: CY7C1041BN-15ZXI CY7C1041BNL-15ZXC
Contextual Info: CY7C1041BN 256K x 16 Static RAM Features Functional Description • Temperature Ranges — Commercial: 0°C to 70°C The CY7C1041BN is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. — Industrial: –40°C to 85°C — Automotive-A: –40°C to 85°C

1041C 8 pin

Abstract: CY7C1041CV33-10BAI 1041C CY7C1041BV33 CY7C1041CV33
Contextual Info: CY7C1041CV33 256K x 16 Static RAM Features Byte HIGH Enable BHE is LOW, then data from I/O pins (I/O8 – I/O15) is written into the location specified on the address pins (A0 – A17). • Pin equivalent to CY7C1041BV33 • High speed — tAA = 10 ns • Low active power

7C1041

Abstract: CY7C1041B 1041B-3 1041B-6
Contextual Info: CY7C1041B 256K x 16 Static RAM Features written into the location specified on the address pins A0 through A17 . If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O 8 through I/O15) is written into the location specified on the address pins (A0 through A17).

CY7C1041BN15VI

Contextual Info: CY7C1041BN 256K x 16 Static RAM Features Functional Description • High speed The CY7C1041BN is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. — tAA = 15 ns • Low active power — 1540 mW max. • Low CMOS standby power (L version)

TR93

Contextual Info: CY7C1041BNV33 CY7C1041BNV33 256K x 16 Static RAM Features Functional Description • High speed The CY7C1041BNV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. — tAA = 12 ns • Low active power — 612 mW max. • Low CMOS standby power

10-ZS

Contextual Info: CY7C1041D 4-Mbit 256K x 16 Static RAM Functional Description[1] Features • Pin-and function-compatible with CY7C1041B The CY7C1041D is a high-performance CMOS static RAM organized as 256K words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable

CY7C1041BV33

Abstract: CY7C1041BV33-12ZC CY7C1041BV33-15ZC 25-ZI
Contextual Info: 041BV33 CY7C1041BV33 256K x 16 Static RAM Features written into the location specified on the address pins A0 through A17 . If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A17).

CY7C1041B-15ZXI

Abstract: CY7C1041B TSOP Type II cy7c1041b-15vxi CY7C1041B-15ZXC CY7C1041B15ZXI CY7C1041B-15VXC
Contextual Info: CY7C1041B 256K x 16 Static RAM Features BLE is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A17). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location

Contextual Info: CY7C1041CV33 256K x 16 Static RAM Features HIGH Enable BHE is LOW, then data from I/O pins (I/O8–I/O15) is written into the location specified on the address pins (A0–A17). • Pin equivalent to CY7C1041BV33 • High speed — tAA = 10 ns • Low active power

Contextual Info: CY7C1041BN 256 K x 16 Static RAM 256 K × 16 Static RAM Features Functional Description • Temperature range: ❐ Commercial: 0 °C to 70 °C ❐ Automotive-A: –40 °C to 85 °C ■ High speed ❐ tAA = 15 ns ■ Low active power ❐ 1540 mW max. ■

CY7C1041BV33-15ZC

Abstract: CY7C1041BV33
Contextual Info: 33 CY7C1041BV33 256K x 16 Static RAM Features written into the location specified on the address pins A0 through A17 . If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O 8 through I/O15) is written into the location specified on the address pins (A0 through A17).

Contextual Info: CY7C1041BNV33 256 K x 16 Static RAM 256 K × 16 Static RAM Features Functional Description • High speed ❐ tAA = 12 ns The CY7C1041BNV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. ■ Low active power ❐ 612 mW max.

Contextual Info: CY7C1041BNV33 256 K x 16 Static RAM 256 K × 16 Static RAM Features Functional Description • High speed ❐ tAA = 12 ns The CY7C1041BNV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. ■ Low active power ❐ 612 mW max.

Contextual Info: CY7C1041CV33 4-Mbit 256K x 16 Static RAM Functional Description[1] Features • Pin equivalent to CY7C1041BV33 The CY7C1041CV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. • Temperature Ranges Writing to the device is accomplished by taking Chip Enable

Contextual Info: 33 CY7C1041BV33 PRELIMINARY 256K x 16 Static RAM Features written into the location specified on the address pins A0 through A17 . If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O 8 through I/O15) is written into the location specified on the address pins (A0 through A17).

CY7C1041B-12ZC

Abstract: CY7C1041B-15VC CY7C1041B
Contextual Info: CY7C1041B CY7C1041B 256K x 16 Static RAM Features written into the location specified on the address pins A0 through A17 . If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A17).

CY7C1041BV33

Abstract: CY7C1041CV33 CY7C1041CV33-10BAC
Contextual Info: CY7C1041CV33 256K x 16 Static RAM Features HIGH Enable BHE is LOW, then data from I/O pins (I/O8–I/O15) is written into the location specified on the address pins (A0–A17). • Pin equivalent to CY7C1041BV33 • High speed — tAA = 10 ns • Low active power

CY7C1041BV33

Abstract: CY7C1041CV33 CY7C1041CV33-12VXI CY7C1041CV33-20ZXC CY7C1042CV33
Contextual Info: CY7C1041CV33 4-Mbit 256K x 16 Static RAM Functional Description[1] Features • Pin equivalent to CY7C1041BV33 The CY7C1041CV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. • Temperature Ranges Writing to the device is accomplished by taking Chip Enable

Contextual Info: CY7C1041BN 256K x 16 Static RAM Features Functional Description • Temperature Ranges — Commercial: 0°C to 70°C The CY7C1041BN is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. — Industrial: –40°C to 85°C — Automotive-A: –40°C to 85°C

CY7C1041BV33

Abstract: CY7C1046BV33 CY7C1049BV33
Contextual Info: Cypress Semiconductor Product Qualification Report QTP# 000305 VERSION 1.0 March, 2000 4 Meg Asynchronous SRAM R52D-3 Technology at Fab 4 CY7C1041BV33 256K x 16 Static RAM CY7C1046BV33 1M x 4 Static RAM CY7C1049BV33 512K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA:

CY7C1041BNV33

Abstract: CY7C1041BNV33L-12VXC CY7C1041BNV33L-12ZXC
Contextual Info: CY7C1041BNV33 256 K x 16 Static RAM 256 K × 16 Static RAM Features Functional Description • High speed ❐ tAA = 12 ns The CY7C1041BNV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. ■ Low active power ❐ 612 mW max.

CY7C1041CV33-12ZXC

Abstract: CY7C1041CV33-15ZXC CY7C1041CV33-15ZXI Application of Z44 CY7C1041CV33-10BAI CY7C1041BV33 CY7C1041CV33 TSOP 48 thermal resistance junction to case CY7C1041CV33-12ZXI CY7C1041CV33-15VC
Contextual Info: CY7C1041CV33 4-Mbit 256K x 16 Static RAM Functional Description[1] Features • Pin equivalent to CY7C1041BV33 The CY7C1041CV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. • Temperature Ranges Writing to the device is accomplished by taking Chip Enable