FAILURE Search Results

Contextual Info: TOSHIBA TC4030BP/BF/BFN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Tran^riRP Tran^fiRF Trzin^nRFM • ^ w » . g ■ ^ w » . f ■ 'w ■■ - - Note The JEDEC SOP (FN) is not available in TC4030B QUAD EXCLUSIVE - OR GATE Japan. TC4030B contains four circuits of exclusive OR gates. Since

TLG145K

Abstract: TLR145K TLR144K TLR143 TLR143K toshiba suffix TLR146K TLG147K TLR146 TLG143K
Contextual Info: TOSHIBA TLG14D K,TLR14D K TOSHIBA LED LAMP TLG143K, TLG144K, TLG145K, TLG147K, TLR140K TLR143K, TLR144K, TLR145K, TLR146K, TLR147K LED LAMP WITH BRACKET MAXIM UM RATINGS Ta= 25°C CHARACTERISTIC Forward Current RED GREEN Reverse Voltage RED Power Dissipation

IGBT loss calculate

Contextual Info: n j] DN-57 b U N IT R O D E Design Note Power Dissipation Considerations for the UC3726N/UC3727N IGBT Driver Pair by Mickey McClure Application Engineer Motion Control Products Optimized or driving Insulated Gate Bipolar Transis­ tors (IGBTs , the UC3726N/UC3727N IGBT driver

74ALS05

Abstract: diode sy 106 diode sy 180 10
Contextual Info: TOSHIBA TENTATIVE TC74VHC05F/FN/FT TO SH IBA C M O S DIGITAL INTEGRATED CIRCUIT SILICON M O N O LITH IC TC74VHC05F, TC74VHC05FN, TC74VHC05FT HEX INVERTER OPEN DRAIN _ The TC74VHC05 is an advanced high speed CMOS INVERTER fabricated with silicon gate C2MOS technology.

Contextual Info: TOSHIBA TC55V2325FF-100 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536 W O R D x 32 BIT Synchronous Pipelined Burst SRAM DESCRIPTION The TC55V2325FF is a 2 ,0 9 7 ,1 5 2 bit synchronous pipelined burst SRAM that is organized as 65,536 words by 32 bits and designed for use in a secondary cache to support MPUs which have burst

Contextual Info: TLC339M, TLC339I, TLC339C QUADRUPLE MICROPOWER LinCMOS COMPARATORS D3135, DECEMBER 1986-R EV ISED FEBRUARY 1989 • Very Low Power. . . 200 jjiW Typ at 5 V T LC 339M . . . J PACKAGE TLC339I. TLC339C . . . D. J, OR N PACKAGE • Fast Response Time . . . 2.5 |xs Typ with

Contextual Info: TO SHIBA 1SS315 TOSHIBA DIODE UHF BAND M IXER APPLICATIONS. 1 SS31 5 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm +0.2 .1 .2 5 -0 . il Nh ÖÖ + 1 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current Junction Temperature

diode SS 3

Contextual Info: TOSHIBA 2SK2699 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2699 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS

diode E155

Abstract: mig20j
Contextual Info: T O SH IB A TENTATIVE MIG20J906E/EA TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J906E, MIG20J906EA HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter and Brake Power Circuits and Thermistor in One Package.

Contextual Info: TOSHIBA UTOPIA Multiplexer/ De-Multiplexer 1 9 9 T C 3 5 8 8 5 T B R e v i s i o n DAT A TOSHIBA AMERICA ELECTRONIC COMPONENTS, I NC 1. 1 BOOK 9 TO SH IB A Preliminary TC35885TB The contents of this technical data are su bject to change w itho ut advance notice due to

z63d

Abstract: TLPGA159P
Contextual Info: TOSHIBA TLPGA159P TOSHIBA LED LAMP PANEL CIRCUIT INDICATOR InG aAiP PURE GREEN LIGHT EMISSION T L P G A 1 59 P 5mm DIAMETER Tl-3/4 InGaA£P PURE GREEN LED All Plastic Mold Type. Colorless Clear Lens Low Drive Current, High Intensity Pure Green Light Emission

Contextual Info: TOSHIBA TC4S11F TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4S11F 2 INPUT N A N D GATE The TC4S11F is 2-input positive logic NAND gates. Gate output with inverter buffer improve the inputoutput characteristics and even if the load capacitance

Contextual Info: T O SH IB A TENTATIVE TC75W56FU TOSHIBA CMOS LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TC75W56FU DUAL COMPARATOR TC75W56FU is a CMOS type general-purpose dual comparator capable of single power supply operation and using lower supply currents than the conventional bipolar

TMS4116

Abstract: TMS4132
Contextual Info: MOS LSI TMS 4132 JDL 32,768-BIT DYNAMIC RANDOM-ACCESS MEMORY NOVEMBER 1979 32,768 «AX SUPPLY 1 X 1 Organization 10% Tolerance on All Supplies • All Inputs Including Clocks TTL-Compatible

Contextual Info: 800EXD28,800FXD28 TOSHIBA TOSHIBA ALLOY-FREE RECTIFIER 800EXD28, 800FXD28 Unit in mm RECTIFIER APPLICATIONS • • • • Repetitive Peak ReverseVoltage : V rrm = 2500—3000V Average Forward Current : Ip AV = 800A Weight : 470g Flat Package MAXIMUM RATINGS

74LS27 truth table

Contextual Info: TOSHIBA TC74HC27AP/AF/AFN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC27AP, TC74HC27AF, TC74HC27AFN Note The JEDEC SOP (FN) is not available in Japan. TRIPLE 3 -IN P U T NOR GATE The TC74HC27A is a high speed CMOS 3-INPUT NOR GATE fabricated with silicon gate C2MOS technology.

Contextual Info: TOSHIBA 2SC3265 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3265 Unit in mm LOW FREQUENCY POWER AMPLIFER APPLICATIONS POWER SWITCHING APPLICATIONS h0.5 High DC Current Gain : hpg (i) = 100~320 Low Saturation Voltage : VcE(sat) = 0.4 V (Max.)

tms4256

Abstract: TMS4266
Contextual Info: INSTR TM4256EL9, TM4256GU9 262,144 BY 9-BIT DYNAMIC BAM MODULES 7“-ifc-23-/7 25E D SEPTEMBER 1986 — REVISED M ARCH 1968 A SIC /MEMORY 262,144 x 9 Organization TM4266EL9 . . . L SMQLE-IN-UNE PACKAGE (TOP VIEWl_ Slngla 5-V Supply (10% Tolerance)

TY 2016 thyristor

Abstract: Toshiba thyristors TOSHIBA Thyristor
Contextual Info: 5. R ELIA BILITY OF SEM ICONDUCTOR 5.1 to pro ducts are evaluated and when quality and reliability are confirm ed, next step o f the trial mass production proceeds. At the trial mass production step, stability of m anufacturing processes is evaluated p repo n­

NCC equivalent

Contextual Info: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors

BENT LEAD transistor TO-92 Outline Dimensions

Abstract: 2SC2712 equivalent 4TE12 diode ssc J Fet marking 2 AW 2SC2873 equivalent 90105 toshiba ultrasonic atomizing SMD TRANSISTOR MARKING 5c
Contextual Info: 5. PA C K A G E FO R M S 5.1 PACKAGE FORM SELECTION TABLE 5.1.1 SUPER-MINI DEVICES S-MINI (SC-59 , SMQ (SC-61), SMV, SM6) PACKAGING FORM PACKAGE SPECIFI­ CATION OUTLINE Pack PACKAGE UNIT - e TE85L Taping EXTERIOR Unit: mm » » » 3000 pcs/ Reel TE85R TE85N

th50vsf1400

Abstract: BA30
Contextual Info: TOSHIBA TH 50VSF1400/1401ACXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM A N D FLASH M E M O R Y M IX E D M U LTI-C H IP PACKAGE DESCRIPTION The TH50VSF1400/1401ACXB is a mixed containing a package 2,097,152-bit SRAM and a 16,777,216-bit flash memory. The SRAM is organized as 262,144 words by 8 bits and the flash memory

Contextual Info: TOSHIBA TC74HC4514AP TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC4514AP 4 -TO - 16 LINE DECODER/LATCH The TC74HC4514A are high speed CMOS 4 - LINE TO 16 LINE DECODER WITH LATCHED INPUTs fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent

Contextual Info: HN3C17FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU Unit in mm V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS 2-1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : N F=1.3dB (f=2GHz) • High Gain : |S2l e|2 = 9-0dB (f=2GHz)