F 2N2222A Search Results

bd7995

Abstract: P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361
Contextual Info: H F To X 8366IT U N E B Issue 2/8534 STR910A B26000 2000 General Wiring Diagram Figure 10.1 +28 V sense) GROUND Meter Batt. sense + Sense Isolated Ground Batt. GND O FF 28 V O FF (T X O F F ) Relays K4, K1 & K2 BATT. MODE »DC» Relays K5, K6 +8 V in GROUND

motorola 2N2270

Abstract: 2N3947 2N956 MOTOROLA JAN 2N2896 transistor motorola 2n3053 motorola 2N2270 to-18 mm3904 motorola 2N2219 2N4028 MM6427
Contextual Info: MOTOROLA SC {XSTRS/ R F> ”ao DE~| h3b7ES4 007b70H 1 T-'*?- / General-Purpose Amplifiers Complementary transistors designed for dc to VHF amplifier and general-purpose switching applications, listed in decreasing order ° f v BR CEO within each package group.

2N2222A LCC1

Abstract: 2N2222ACSM 2n2222a SOT23
Contextual Info: lili IF F i IMI SEME 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.61 ±0.10 . (0.02 * 0.004) ;

2N2222A

Contextual Info: PN2222A / 2N2222A PN2222A / 2N2222A General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2005-11-28 Power dissipation Verlustleistung 18 9 16 E BC 625 mW Plastic case Kunststoffgehäuse TO-92

2N3055E specification

Abstract: 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package
Contextual Info: BS/CECC Type No. Polarity 2N 2906\ CV-0 PNP 2N2906A; PNP 1CV' ° 2N2907 1 f f j CV-0 PNP CV-0 PNP 2N2907A 2N2913y 1 50002-186 NPN Dual '2N3054 >2N3055 / ^2N3055E r rX2N3209 1 ^¿2N3209L / • ° 50004-042 50003-020 50004-XXX 50004-XXX 2N3347 2N3348 2N3349

2N2222A plastic

Abstract: 2N2222A TO-92 2N2907A plastic 2n2222a transistor 2N2907A TO-92 Transistor 2N2222A transistor 2n2222a data sheet to-92 2n2222a to 92 PN2222A 10D3
Contextual Info: PN2222A / 2N2222A PN2222A / 2N2222A General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2005-11-17 Power dissipation Verlustleistung 18 9 16 E BC 2 x 2.54 Dimensions / Maße [mm] 625 mW

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

MSC027

Contextual Info: Micmsemi Watertown, M A 02172 PH: <B17 >26-0404 FAX: 617) 924-1296 2N2222A Features • • « « Meets MIL-S-19500/255 Collector-Base Voltage 75 Collector Current 800mA f ast 'Switching 335 nS 75 Volts 0.8 Amps NPN BIPOLAR TRANSISTOR Maximum Ratings P ¿T ':G

ED38 diode

Abstract: 2N2222A 338 TEKELEC 297 Sdk-85 Intel sdk-85 rom code sdk 8085 microcomputer BBL3 8048 printer intel MCS-48 Monsanto pan
Contextual Info: intei I n t e l C orp ora tion, 1977 APPLICATION NOTE AP-27 P R IC E $1.GG Related Intel Publications "UPI-41 User's M anual” The material in this A p p l i c a ti o n Note is f o r in fo r m a t io n a l purposes on ly and is subject t o change w i t h o u t notice. lntel C o rp o ra ti o n has made an e f f o r t to ve rify t h a t the mate­

Contextual Info: 0 . PPTEK Product Bulletin JANTX, JANTXV, 2N2222AUA September 1996 Surface Mount NPN General Purpose Transistor Types JANTX, JANTXV, 2N2222AUA .225 5 . 7 2 .0 7 5 ( 1 . 9 1 ) ,215 (5 . 4 6 ) .06 1 ( 1.55) f .1 5 5 ( 3 . 9 4 ) PIN 1- v IDENTIFIER . 145 ( 3 . 6 8 )

2N2222A 331

Abstract: 2n2222 -331 2N2222A motorola 2n2222 -331 transistors 2n2222 a 331 2n2222 331 transistors 2n2222 h 331 transistors 2n2222 h 331 2n2222 - 331 2n2222 331
Contextual Info: MOTOROLA SC XSTRS/R 12E F 2N2218A 2N2219A 2N2221A 2N2222A 2N5581 2N55S2 Unît 40 40 Vdc Vdc Sym bol 2N2218 2N2219 2N2221 2N2222 Collector-Emitter Voltage v CEO 30 Collector-Base Voltage VCBO 60 75 75 Emrtter*Base Voltage Ve b o 5.0 6.0 6.0 Vdc 'c 800 800 800

2N2222A motorola

Abstract: equivalent transistor 2N2222 2n2222 equivalent s parameters of 2N2222 equivalent of 2n2222 motorola 2N2219 2n2219 equivalent 2n2222 motorola MOTOROLA 2n2222 TRANSISTOR 2N2218A 2N2219A motorola
Contextual Info: q S S • o f e S M A X IM U M RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current — Continuous Symbol 2N2219 2N2222 2N2218A 2N2219A 2N2222A Unit v CEO 30 40 Vdc v CBO 60 75 Vdc v EBO 5.0 6.0 Vdc mAdc

BF195 equivalent

Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products

4011 cmos

Abstract: high frequency welder circuit diagram Static Induction Transistor SIT ic cmos 4011 4011 c-mos SIT Static Induction Transistor NAND 4011 ic pinout of IC 4011 LRGAT150F100 full-bridge welder
Contextual Info: L R G A T 7 5 F 1 00 10 00V 7 5 A A d van ced R o w er L R G A T 1 5 0 F 1 0 0 10 00V 1 5 0 A T e c h n o l o g y ZVSTHYRISTOR DUAL MODE IGBT HALF BRIDGE POWER MODULE PRODUCT DESCRIPTION The LRGAT series consists of half bridges designed to be used in Zero Voltage Switching ZVS power

BSX21

Abstract: BC107C BC10B 2N718 pin configuration 2N915 BC109C pin configuration bfy76 BSY79 BC-108 2N2221A
Contextual Info: TO-18 P IN C O N F I G U R A T I O N 1. E m itte r 2. B a s e 3. C o lle c to r DIM MIN A 5,24 MAX 5,84 B 4,52 4,97 C 4,31 5,33 D 0,40 0,53 E - F - 0,76 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45 DEG ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN

Contextual Info: ¡J8BBBBB88& p | M iwiHBBffi smssssPe .rfHHHHHHHHMh. 1m1 itittnnnnn hhhhhhk-. loniftBHhr. I Ir ^888o 88% #f 1 l D a ta S h e e t No. 2 N 2 2 2 2 A U B $ sdL SEMICONDUCTORS G eneric Part Num ber: 2N2222A Type 2N2222AUB G eom etry 0400 P olarity NPN Q ual Level: J A N -J A N S

Contextual Info: ¡J8BBBBB88& iwiHBBffi p e | M s mssssP .rfHHHHHHHHMh. m1 1 itittnnnnn hhhhhhk-. loniftBHhr. IIr ^888o 88% #f 1 l Da ta S he e t No. 2 N 2 2 2 2 A $ sdL SEMICONDUCTORS G eneric Part Num ber: 2N2222A Type 2N2222A G eom etry 0400 P olarity NPN Q ual Level: J A N -J A N S

Royer oscillator

Abstract: Royer resonant AX161 Diode T3 D40 4181 sumida Royer oscillator circuit diagram AX1610
Contextual Info: 19-1128; R ev 0:9/96 A M X I A I Digitally C ontrolled C C F L B a ck lig h t P o w e r S u p p lies The MAX1610’s digital inputs increment, decrement, or c le a r an internal, 5-bit up/down counter, which sets C C F L b rig h t n e s s . T h e M AX1611 u s e s a S yste m

M6800 programming manual

Abstract: PIR based human motion DETECTOR CIRCUIT DIAGRAM MC6820 PIA mcm6830 BURROUGHS self scan car ecu microprocessors DVD CD 5888 CB MC6810 IP 8082 BL 4013 FLIP FLOP APPLICATION DIAGRAMS
Contextual Info: MOTOROLA M 6800 Microprocessor Appi i cat i ons Manual B e n c h m a r k F a m ily F o r M ic r o c o m p u t e r S y s te m s I I I tlß i by C om puter A p p lic a tio n s Engineering M OTOROLA S e m ic o n d u c to r Products Inc. M6800 APPLICATION MANUAL

Contextual Info: TO-18 - A • T o P IN C O N F IG U R A T IO N 1. E m itte r 2. B a s e 3 . C o lle c to r DIM MIN A 5,24 5,84 B 4,52 4,97 MAX C 4,31 5,33 D 0,40 0,53 0,76 E - F - 1,27 G - 2,97 H 0,91 1,17 J 0,71 1,21 K 12,7 L 45 DEG - ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN

tl 2n2222

Abstract: 2N2222 2n2222 ti 2N2222 npn small signal current gain 2N2222 circuit output impedance of 2N2222 2N2222, 2N2222A Transistor 2N2222A 2n2222 test circuit Metal 2n2222
Contextual Info: N AMER PHILIPS/DISCRETE b'IE D • bbS3T31 OOEÛÜflb 12G I IAPX 2N2222 2N2222A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a T O -18 metal envelope w ith the collector connected to the case. They are primar­ ily intended for high speed switching. The 2 N 2 2 2 2 is also suitable for d.c. and v.h.f./u.h .f. amplifiers.

BCY79-9

Abstract: bcy791 BcY591 BSX21 2N706 BC107C BC109C pin configuration 2N706A 2N718A 2N720
Contextual Info: TO-18 h - B -h ! o PIN C O N F IG U R A T IO N 1. Em itter 2. B a s e 3. Co llector DIM MIN A 5 ,2 4 M AX 5 ,8 4 B 4 ,5 2 4 ,9 7 C 4,31 5 ,3 3 D 0 ,4 0 0 ,5 3 0 ,7 6 E - F - 1,27 G - 2 ,9 7 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45 D E G ALL DIMENSIONS ARE IN M.M.

2N2222A

Abstract: 2N2907A HCT700 vbe 10v, vce 500v NPN Transistor TL 2N2222A npn transistor
Contextual Info: m i Ë F ti llll HCT700 SEME LAB MECHANICAL DATA COMPLEMENTARY SWITCHING TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS Dimensions in mm inches LCC2 - Ceramic Surface Mount Package FEATURES 2.29 ± 0.20

PN2907A

Abstract: 2N2907A 2N2907A die 10D3 2N2222A PN2222A 2n2222a to 92 TO-92 Gehause 2N2907A plastic
Contextual Info: PN2907A / 2N2907A PN2907A / 2N2907A General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2005-11-21 Power dissipation Verlustleistung 18 9 16 E BC 2 x 2.54 Dimensions / Maße [mm] 625 mW